RECTRON RL1N1000F, RL1N1200F, RL1N1400F, RL1N1600F, RL1N1800F Datasheet
RECTRON
1.0 (25.4
)
MIN.
.166 (4.2
)
.205 (5.2
)
1.0 (25.4
)
MIN.
.107 (2.7
)
.080 (2.0
)
DIA.
.025 (0.6
)
.021 (0.5
)
DIA.
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
PHOTOFLASH RECTIFIER
VOLTAGE RANGE 1000 to 1800 Volts CURRENT 0.5 Ampere
FEATURES
* High reliability
* Low leakage
* Low forward voltage drop
* High current capability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.20 gram
RL1N1000F
THRU
RL1N1800F
A-405
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
at TA = 55oC
Peak Forward Surge Current IFM (surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 0.5A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage TA = 25oC
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at TL = 55oC
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts
(At TA = 25oC unless otherwise noted)
RATINGS
(At TA = 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
TJ, T
STG
SYMBOL
V
F
I
R
trr
Dimensions in inches and (millimeters)
RL1N1000F
RL1N1000F RL1N1400F RL1N1600F RL1N1800FRL1N1200F UNITS
RL1N1200F
1000 1400 1600 18001200
700 980 11 20 1260840
1000 1400 1600 18001200
RL1N1400F RL1N1600F
25
10
-65 to + 175
1.8
5.0
100
300
RL1N1800F
UNITS
Volts
Volts
Volts
Amps500
Amps
pF
0
C
Volts
uAmps
uAmps
nSec
2001-6
RATING AND CHARACTERISTIC CURVES
(
RL1N1000F THRU RL1N1800F
)
FIG. 1 - FORWARD CURRENT
DERATING CURVE
600
500
400
Single Phase
CURRENT, (mA)
300
Half Wave 60Hz
Resistive or
Inductive Load
200
AVERAGE FORWARD RECTIFIED
100
25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( )
FIG. 3 - MAXIMUM NON-REPETITIVE SURGE CURRENT
40
30
8.3ms Single Half Sine-Wave
20
(JEDEC Method)
10
PEAK FORWARD SURGE CURRENT, (A)
0
1 2 4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG. 2 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1.0
.8
.6
.4
.2
.1
.06
CURRENT, (A)
.04
.02
INSTANTANEOUS FORWARD
.01
.8 .9 1.0 1.1 1.2 1.3
INSTANTANEOUS FORWARD VOLTAGE, (V)
TJ=25
Pulse Width = 300uS
1% Duty Cycle
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
TJ = 25
4
2
JUNCTION CAPACITANCE, (pF)
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE10NONINDUCTIVE
( + )
25 Vdc
(approx)
( - )
NOTES:
D.U.T
1
NONINDUCTIVE
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
OSCILLOSCOPE
(NOTE 1)
( - )
PULSE
GENERATOR
(NOTE 2)
( + )
+0.5A
-0.25A
-1.0A
trr
0
1cm
SET TIME BASE FOR
50/100 ns/cm
RECTRON
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