RECTRON MD6S, MD7S, MD3S, MD4S, MD2S Datasheet
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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
SINGLE-PHASE GLASS PASSIVATED
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere
FEATURES
* Surge overload rating - 30 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 0.5 gram
MD1S
THRU
MD7S
MD-S
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
* UL listed the recognized component directory, file #E94233
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Rectified
Current at
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
(At TA = 25oC unless otherwise noted)
RATINGS
TA = 30oC - on glass-epoxy P.C.B. ( NOTE 1 )
- on aluminum substrate ( NOTE 2 )
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
TJ,T
STG
M D
0.028(0.9)
0.020(0.5)
0.108(2.74)
0.092(2.34)
MD1S MD3S MD4SMD2S MD5S MD6S MD7S
50 200 400100 600 800 1000
35 140 28070 420 560 700
50
.004(0.10) MAX.
0.193(4.9)
0.177(4.5)
0.193(4.9)
0.177(4.5)
Dimensions in millimeters
200 400100 600 800 1000
-55 to + 150
0.106(2.7)
0.091(2.3)
0.5
0.8
30
2.756(7.0)
0.260(6.6)
0.157(4.0)
0.145(3.6)
0.014(0.35)
0.006(0.15)
1
2
3
4
0.157(4.0)
0.152(3.6)
UNITS
Volts
Volts
Volts
Amp
Amps
0
C
ELECTRICAL CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 0.5A DC
Maximum Reverse Current at rated
DC Blocking Voltage per element
NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05” (1.3 X 1.3mm) pads.
2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25” (20 X 20 X 6.4mm) mounted on 0.05 X 0.05” (1.27 X 1.27mm) solder pad.
3. Suffix “-S” Surface Mount for Mini Dip Bridge.
(At TA = 25oC unless otherwise noted)
CHARACTERISTICS
@TA = 25oC
@TA = 125oC
SYMBOL
V
F
I
R
MD1S MD3S MD4SMD2S MD5S MD6S MD7S
1.05
10
0.5 mAmps
UNITS
Volts
uAmps
2001-4
RATING AND CHARACTERISTIC CURVES
(
MD1S THRU MD7S
)
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
2
pulse test
per one diode
1
0.5
TL=1500C
(TYP)
0.2
0.1
INSTANTANEOUS FORWARD CURRENT, (A)
0.05
0 0.2 0.4 0.6 0.8 1 1.2
INSTANTANEOUS FORWARD VOLTAGE, (V)
SURGE FORWARD CURRENT CAPABILITY
TL=250C
(TYP)
POWER DISSIPATION
2.4
sine wave
Tj=1500C
2
(W)
F
1.6
1.2
0.8
0.4
POWER DISSIPATION P
0
0 0.2 0.4 0.6 0.8 1
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
TYPICAL FORWARD CURRENT
DERATING CURVE
35
30
25
20
15
10
5
FSM
I
0
8.3ms 8.3ms
1 cycle
non-repetitive
Tj=250C
PEAK FORWARD SURGE CURRENT, (A)
0
1 2 5 10 20 50 100
NUMBER OF CYCLE
sine wave
1.4
1.2
1.0
0.8
0.6
0.4
0.2
AVERAGE FORWARD CURRENT, (A)
on glass
-epoxy substrate
0
0 40 80 120 160
on aluminum
substrate
AMBIENT TEMPERATURE, (
RECTRON
sine wave
R-load
free in air
o
C )
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