RECTRON LS4148 Datasheet

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RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

1N4148 Quadro MELF SIGNAL DIODE

Absolute Maximum Ratings (Ta=25°C)

Items S
Reverse Voltage VR 75 V
Reverse Recovery

Time
Power Dissipation

3.33mW/°C

25°C
Forward Current IF 150 mA
Junction Temp. Tj -65 to 175°C
Storage Temp. Tstg -65 to 175°C

mbol Ratings Unit

trr 4 ns

P 500 mW

Cathode Identification

LS4148

1.7
Glass

1.5 +/-0.1

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Mechanical Data

Items Materials
Package Q
Case Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip Glass Passivated

UADRO

MELF

3.5 +/- 0.2

Glass

Dimensions in millimeters

Electrical Characteristics (Ta=25°C)

Ratings Symbol Ratings Unit
Minimum Breakdown Voltage

BV 100 V
@IR= 100uA
Peak Forward Surge Current

IFsurge 2 A

tp= 1µsec.
Maximum Forward Voltage

IF= 10mA
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100

Maximum Thermal Resistance

(on PC Board 50mm x 50mm x 1.6m m)

Maximum Rectification Efficiency
Vrf= 2V, f= 100MHz

Ω

VF 1.0 V

IR

0.025

5.0
50

Cj 4 pF
trr 4 ns

RθJA 500

ην

0.45 %

°

uA

C/W

RECTRON USA

1315 John Reed Court, Industry, CA 91745

Tel: [phone] Fax: [phone]

www.rectron.com