RECTRON HSM103, HSM104, HSM105, HSM106, HSM101 Datasheet
...
RECTRON
.095 (2.4
)
.106 (2.7
)
.028 (.60
)
.018 (.46
)
.190 (4.8
)
.205 (5.2
)
SOLDERABLE
ENDS
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere
FEA TURES
* Fast switching
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.015 gram
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
HSM101
THRU
HSM106
MELF
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at TA = 50oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC Volts
Maximum DC Reverse Current at Rated DC Blocking Voltage
Maximum Full Load Reverse Current Average,
Full Cycle .375” (9.5mm) lead length at
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
(At TA = 25oC unless otherwise noted)
RATINGS
(At TA = 25oC unless otherwise noted)
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
CHARACTERISTICS
TA = 25oC
TL = 55oC
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
TJ, T
STG
SYMBOL
V
F
I
R
trr
HSM102
HSM101 HSM104
100
50 300
35 21070280 420140
50 300100 400 600200
30
15
-65 to + 175
HSM101 HSM104HSM102 HSM105 HSM106HSM103
1.0 1.70
5.0
100
50Maximum Reverse Recovery Time (Note 1)
HSM105 HSM106HSM103
400 600200
12
1.3
75
UNITS
Volts
Volts
Volts
Amps1.0
Amps
pF
0
C
UNITS
uAmps
uAmps
nSec
2001-4
RATING AND CHARACTERISTIC CURVES
(
HSM101 THRU HSM106
)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE10NONINDUCTIVE
D.U.T
( + )
25 Vdc
(approx)
(¡V)
1
NONINDUCTIVE
1 Rise Time = 7ns max. Input Impedance =
NOTES:
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
OSCILLOSCOPE
(NOTE 1)
(¡V)
PULSE
GENERATOR
(NOTE 2)
( + )
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ = 150
TJ = 100
1.0
TJ = 25
.1
INSTANTANEOUS REVERSE CURRENT, (uA)
.01
400 20 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
+0.5A
-0.25A
-1.0A
trr
0
1cm
SET TIME BASE FOR
10/20 ns/cm
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
10
1.0
.1
.01
INSTANTANEOUS FORWARD CURRENT, (A)
.001
0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
2.0
Single Phase
Half Wave 60Hz
Resistive or
1.0
0
0 25 50 75100125150175
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
Inductive Load
CHARACTERISTICS
HSM104~HSM105
HSM106
HSM101~HSM103
TJ = 25
Pulse Width = 300uS
1% Duty Cycle
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
70
60
50
8.3ms Single Half Sine-Wave
(JEDEC Method)
40
30
20
10
0
PEAK FORWARD SURGE CURRENT, (A)
1 2 5 10 20 50 100
NUMBER OF CYCLES AT 60Hz
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
HSM101~HSM105
HSM106
TJ = 25
4
2
JUNCTION CAPACITANCE, (pF)
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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