RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICA TION
SURF ACE MOUNT GLASS PASSIV ATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
FEA TURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.24 gram
HFM301
THRU
HFM308
DO-214AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at TA = 50oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Maximum Forward Voltage at 3.0A DC Volts
Maximum Full Load Reverse Current, Full cycle Average
Maximum DC Reverse Current at
Rated DC Blocking Voltage
NOTES : 1. Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
(At TA = 25oC unless otherwise noted)
RATINGS
(At TA = 25oC unless otherwise noted)
CHARACTERISTICS
TA = 55oC
@TA = 25oC
@TA = 125oC
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
TJ, T
STG
SYMBOL
V
F
I
R
trr
HFM301
HFM302
50
100
35
70
50
100
HFM301 HFM306HFM303 HFM307 HFM308HFM304
HFM302 HFM305
1.0
HFM303
200
140
200
200
70
50Maximum Reverse Recovery Time (Note 1)
HFM304
300
210
300
-65 to + 175
HFM305
400
280
400
1.3
50
10
150 uAmps
HFM306
600
420
600
HFM307
800
560
800
150
50
1.7
75
HFM308
1000
700
1000
UNITS
Volts
Volts
Volts
Amps3.0
Amps
pF
0
C
UNITS
uAmps
uAmps
nSec
1998-8