RECTRON HFM202, HFM201, HFM208, HFM207, HFM206 Datasheet

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICA TION

SURF ACE MOUNT GLASS PASSIV ATED

HIGH EFFICIENCY SILICON RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes

FEA TURES

* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.098 gram

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

0.083 (2.11

0.077 (1.96

HFM201

THRU

HFM208

DO-214AA

)

)

0.155 (3.94

0.130 (3.30

)
)

HFM206

600
420
600

)
)

)
)

HFM207

0.012 (0.305

0.006 (0.152

0.008 (0.203

0.004 (0.102

HFM208

800

1000

560

700

800

1000

20

1.7

75

)
)

)
)

0.180 (4.57

0.160 (4.06

0.096 (2.44

0.084 (2.13

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

MAXIMUM RATINGS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current

at TA = 50oC
Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS

Maximum Forward Voltage at 2.0A DC Volts
Maximum Full Load Reverse Current, Full cycle Average

Maximum DC Reverse Current at
Rated DC Blocking Voltage

NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.

(At TA = 25oC unless otherwise noted)

RATINGS

(At TA = 25oC unless otherwise noted)

CHARACTERISTICS

TA = 55oC
@TA = 25oC
@TA = 125oC

2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.

SYMBOL

V

RRM

V

RMS

V

DC

I

O

I

FSM

C

J

TJ, T

STG

SYMBOL

V

F

I

R

trr

HFM201

50
35
50

HFM201 HFM206HFM203 HFM207 HFM208HFM204

0.060 (1.52

0.030 (0.76

HFM202

HFM203

100

70

100

HFM202 HFM205

1.0

)
)
)
)

0.220 (5.59

0.205 (5.21

Dimensions in inches and (millimeters)

HFM204
200
140
200

30

50Maximum Reverse Recovery Time (Note 1)

HFM205

300

400

210

280

300

400

60

-65 to + 175

1.3
50

5.0

100 uAmps

UNITS

Volts
Volts
Volts

Amps2.0

Amps

pF

0

C

UNITS

uAmps
uAmps

nSec

2001-5

RATING AND CHARACTERISTIC CURVES

(

HFM201 THRU HFM208

)

FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50
NONINDUCTIVE10NONINDUCTIVE

( + )

25 Vdc
(approx)

NOTES:

D.U.T

( - )

1
NON­INDUCTIVE

1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.

2. Rise Time = 10ns max. Source Impedance =
50 ohms.

OSCILLOSCOPE

(NOTE 1)

( - )

PULSE

GENERATOR

(NOTE 2)

( + )

+0.5A

-0.25A

-1.0A

trr

0

1cm

SET TIME BASE FOR
10/20 ns/cm

FIG. 3 - TYPICAL REVERSE CHARACTERISTICS

100

10

TJ = 150

TJ = 100

1.0

TJ = 25

.1

INSTANTANEOUS REVERSE CURRENT, (uA)

.01

400 20 60 80 100 120 140

PERCENT OF RATED PEAK

10

1.0

.1

.01

INSTANTANEOUS FORWARD CURRENT, (A)

.001

0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8

REVERSE VOLTAGE, (%)

FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

70
60
50

8.3ms Single Half Sine-Wave
(

JEDEC Method

)

40
30
20

10

0

PEAK FORWARD SURGE CURRENT, (A)

1 2 5 10 20 50 100

200
100

60
40

20
10

6
4

2

JUNCTION CAPACITANCE, (pF)

1

.1 .2 .4 1.0 2 4 10 20 40 100

NUMBER OF CYCLES AT 60Hz

FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE

4.0

Single Phase
Half Wave 60Hz
Resistive or

2.0

0

0 25 50 75 100125150175

AVERAGE FORWARD CURENT, (A)

AMBIENT TEMPERATURE ( )

FIG. 4 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

HFM204~HFM205

HFM201~HFM203

Pulse Width = 300uS
1% Duty Cycle

Inductive Load

HFM206~HFM208

TJ = 25

INSTANTANEOUS FORWARD VOLTAGE, (V)

FIG. 6 - TYPICAL JUNCTION CAPACITANCE

HFM201~HFM205

HFM206~HFM208

TJ = 25

REVERSE VOLTAGE, ( V )

RECTRON