RECTRON HFM108, HFM107, HFM106, HFM105, HFM104 Datasheet

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICA TION

SURF ACE MOUNT GLASS PASSIV ATED

HIGH EFFICIENCY SILICON RECTIFIER

VOL TAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

FEA TURES

* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.057 gram

MECHANICAL DATA

* Epoxy : Device has UL flammability classification 94V-0

0.067 (1.70

0.051 (1.29

)
)

HFM101

THRU

HFM108

)

0.180(4.57
)

0.160(4.06

DO-214AC

0.110 (2.79

0.086 (2.18

)
)

HFM108

1000

700

1000

)
)

)
)

0.012 (0.305

600
420
600

0.006 (0.152

0.008 (0.203

0.004 (0.102

)
)

HFM107

800
560
800

12

1.7

75

)

0.091 (2.31
)

0.067 (1.70
)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

MAXIMUM RATINGS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current

at TA = 50oC
Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Typical Junction Capacitance (Note 2)
Pulse energy, non repetitive(inductive load switch off ) ER
Operating and Storage T emperature Range

ELECTRICAL CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC Volts
Maximum Full Load Reverse Current, Full cycle Average

Maximum DC Reverse Current at
Rated DC Blocking Voltage

NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.

(At TA = 25oC unless otherwise noted)

RATINGS

(At TA = 25oC unless otherwise noted)

CHARACTERISTICS

TA = 55oC
@TA = 25oC
@TA = 125oC

2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.

SYMBOL

V

RRM

V

RMS

V

DC

I

O

I

FSM

C

J

TJ, T

STG

SYMBOL

V

F

I

R

trr

HFM101

50
35
50

HFM101 HFM106HFM103 HFM107 HFM108

0.059 (1.50
)

0.035 (0.89

0.209 (5.31

0.185 (4.70

Dimensions in inches and (millimeters)

HFM102

100

70

100

HFM102 HFM105

1.0

HFM103

200
140
200

15

50Maximum Reverse Recovery Time (Note 1)

HFM104

HFM105

300

400

210

280

300

400

30

20

-65 to + 150

HFM104

1.3
50

5.0

100 uAmps

HFM106

UNITS

Volts
Volts
Volts

Amps1.0

Amps

pF

mJ

0

C

UNITS

uAmps
uAmps

nSec

2002-2

RATING AND CHARACTERISTIC CURVES

(

HFM101 THRU HFM108

)

FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50
NONINDUCTIVE10NONINDUCTIVE

( + )

25 Vdc
(approx)

NOTES:

D.U.T

( - )

1
NON­INDUCTIVE

1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.

2. Rise Time = 10ns max. Souce Impedance =
50 ohms.

OSCILLOSCOPE

(NOTE 1)

( - )

PULSE

GENERATOR

(NOTE 2)

( + )

+0.5A

-0.25A

-1.0A

trr

0

1cm

SET TIME BASE FOR
10/20 ns/cm

FIG. 3 - TYPICAL REVERSE CHARACTERISTICS

100

10

TJ = 150

TJ = 100

1.0

TJ = 25

.1

INSTANTANEOUS REVERSE CURRENT, (uA)

.01

400 20 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

10

1.0

.1

.01

INSTANTANEOUS FORWARD CURRENT, (A)

.001

0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8

FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE

2.0

Single Phase
Half Wave 60Hz
Resistive or

1.0

0

0 25 50 75 100125 150175

AVERAGE FORWARD CURENT, (A)

AMBIENT TEMPERATURE ( )

FIG. 4 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

HFM104~HFM105

HFM101~HFM103

Pulse Width = 300uS
1% Duty Cycle

Inductive Load

HFM106~HFM108

TJ = 25

INSTANTANEOUS FORWARD VOLTAGE, (V)

FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

70
60
50

8.3ms Single Half Sine-Wave
(JEDEC Method)

40
30
20

10

0

PEAK FORWARD SURGE CURRENT, (A)

1 2 5 10 20 50 100

NUMBER OF CYCLES AT 60Hz

FIG. 6 - TYPICAL JUNCTION CAPACITANCE

200
100

60
40

20
10

6

HFM101~HFM105

TJ = 25

HFM106~HFM108

4
2

JUNCTION CAPACITANCE, (pF)

1

.1 .2 .4 1.0 2 4 10 20 40 100

REVERSE VOLTAGE, ( V )

RECTRON