The W29C020C is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device
can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W29C020C results in fast write (erase/program)
operations with extremely low current consumption compared to other comparable 5-volt flash memory
products. The device can also be written (erased and programmed) by using standard EPROM
programmers.
FEATURES
• Single 5-volt write (erase and program)
operations
• Fast page-write operations
− 128 bytes per page
− Page write (erase/program) cycle: 10 mS
(max.)
− Effective by te-write (erase/program) cycle
time: 39 µS
− Optional software-protected data write
• Fast chip-erase operation: 50 mS
• Two 8 KB boot blocks with lockout
• Whole chip cycling:
10K (typ.)
• Read access time: 70/90/120 nS
• Twenty-year data retention
• Software and hardware data protection
• Low power consumption
− Active current: 25 mA (typ.)
− Standby current: 20 µA (typ.)
• Automatic write (erase/program) timing with
internal VPP generation
• End of write (erase/program) detection
− Toggle bit
− Data polling
• Latched address and data
• All inputs and outputs directly TTL compatible
• JEDEC standard byte-wide pinouts
• Available packages: 32-pin 600 mil DIP, 32-pin
TSOP, and 32-pin PLCC
Publication Release Date: April 1999
- 1 -Revision A1
PIN CONFIGURATIONSBLOCK DIAGRAM
123
910111213
1415163231
30
V
DD
E
45678
13
ARRAY
CONTROL
BUFFER
OE
WEA0A17
.
.
V
DD
CE
OE
WE
W29C020C
NC
A16
A15
4
A12
5
A7
6
A6
7
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
A11
2
A9
3
A8
A13
A14
A17
WE
V
DD
9
NC
10
A16
11
A15
12
A12
A7
14
A6
15
A5
16A3
A4
32-pin
8
DIP
A
A
A
1
16N
D
1
2
C
D
5
5
6
7
8
32-pin
PLCC
9
10
11
12
13
D
D
G
D
Q
Q
N
Q
1
2
D
3
32-pin
TSOP
WE
A17
29
A14
28
A13
27
A8
26
A9
25
A11
24
OE
23
A10
22
CE
21
DQ7
20
DQ6
19
DQ5
18
DQ4
17
DQ3
/
V
A
W
1
7
3031321234
29
A14
28
A13
27
A8
26
A9
25
A11
24
OE
23
A10
22
CE
21
DQ7
20191817161514
D
D
D
Q
Q
Q
4
5
6
V
SS
CE
OUTPUT
DQ0
.
DQ7
8K Byte Boot Block (Optional)
.
.
DECODER
CORE
8K Byte Boot Block (Optional)
PIN DESCRIPTION
SYMBOL PIN NAME
A0−A17Address Inputs
OE
32
A10
31
CE
30
DQ7
29
DQ6
28
DQ5
27
DQ4
26
DQ3
25
GND
24
DQ2
23
DQ1
22
DQ0
21
A0
20
A1
19
A2
18
17
DQ0−DQ7Data Inputs/Outputs
Chip Enable
Output Enable
Write Enable
VDDPower Supply
GNDGround
NCNo Connection
- 2 -
W29C020C
FUNCTIONAL DESCRIPTION
Read Mode
The read operation of the W29C020C is controlled by CE and OE , both of which have to be low for the
host to obtain data from the outputs. CE is used for device selection. When CE is high, the chip is deselected and only standby power will be consumed. OE is the output control and is used to gate data
from the output pins. The data bus is in high impedance state when either CE or OE is high.
Refer to the read cycle timing waveforms for further details.
Page Write Mode
The W29C020C is written (erased/programmed) on a page basis. Every page contains 128 bytes of data.
If a byte of data within a page is to be changed, data for the entire page must be loaded into the device.
Any byte that is not loaded will be erased to "FF hex" during the write operation of the page.
The write operation is initiated by forcing CE and WE low and OE high. The write procedure consists
of two steps. Step 1 is the byte-load cycle, in which the host writes to the page buffer of the device.
Step 2 is an internal write (erase/program) cycle, during which the data in the page buffers are
simultaneously written into the memory array for non-volatile storage.
During the byte-load cycle, the addresses are latched by the falling edge of either CE or WE,
whichever occurs last. The data are latched by the rising edge of either CE or WE, whichever occurs
first. If the host loads a second byte into the page buffer within a byte-load cycle time (TBLC ) of 200 µS
after the initial byte-load cycle, the W29C020C will stay in the page load cycle. Additional bytes can
then be loaded consecutively. The page load cycle will be terminated and the internal write
(erase/program) cycle will start if no additional byte is loaded into the page buffer A7 to A17 specify the
page address. All bytes that are loaded into the page buffer must have the same page address. A0 to A6
specify the byte address within the page. The bytes may be loaded in any order; sequential loading is
not required.
In the internal write cycle, all data in the page buffers, i.e., 128 bytes of data, are written simultaneously
into the memory array. Before the completion of the internal write cycle, the host is free to perform other
tasks such as fetching data from other locations in the system to prepare to write the next page.
Software-protected Data Write
The device provides a JEDEC-approved optional software-protected data write. Once this scheme is
enabled, any write operation requires a three-byte command sequence (with specific data to a specific
address) to be performed before the data load operation. The three-byte load command sequence begins
the page load cycle, without which the write operation will not be activated. This write scheme provides
optimal protection against inadvertent write cycles, such as cycles triggered by noise during system
power-up and power-down.
The W29C020C is shipped with the software data protection enabled. To enable the software data
protection scheme, perform the three-byte command cycle at the beginning of a page load cycle. The
device will then enter the software data protection mode, and any subsequent write operation must be
preceded by the three-byte command sequence cycle. Once enabled, the software data protection will
remain enabled unless the disable commands are issued. A power transition will not reset the software
data protection feature. To reset the device to unprotected mode, a six-byte command sequence is
required. For information about specific codes, see the Command Codes for Software Data Protection in
the Table of Operating Modes. For information about timing waveforms, see the timing diagrams below.
- 3 -
W29C020C
Hardware Data Protection
The integrity of the data stored in the W29C020C is also hardware protected in the following ways:
(1) Noise/Glitch Protection: A WE pulse of less than 15 nS in duration will not initiate a write cycle.
(2) VDD Power Up/Down Detection: The write operation is inhibited when VDD is less than 2.5V.
(3) Write Inhibit Mode: Forcing OE low, CE high, or WE high will inhibit the write operation. This
prevents inadvertent writes during power-up or power-down periods.
(4) VDD power-on delay: When VDD reaches its sense level, the device will automatically timeout for
5 mS before any write (erase/program) operation.
Chip Erase Modes
The entire device can be erased by using a six-byte software command code. See the Software Chip
Erase Timing Diagram.
Boot Block Operation
There are two boot blocks (8K bytes each) in this device, which can be used to store boot code. One of
them is located in the first 8K bytes and the other is located in the last 8K bytes of the memory. The
first 8K or last 8K of the memory can be set as a boot block by using a seven-byte command sequence.
See Command Codes for Boot Block Lockout Enable for the specific code. Once this feature is set the
data for the designated block cannot be erased or programmed (programming lockout); other memory
locations can be changed by the regular programming method. Once the boot block programming
lockout feature is activated, the chip erase function will be disabled. In order to detect whether the boot
block feature is set on the two 8K blocks, users can perform a six-byte command sequence: enter the
product identification mode (see Command Codes for Identification/Boot Block Lockout Detection for
specific code), and then read from address "00002 hex" (for the first 8K bytes) or "3FFF2 hex" (for the
last 8K bytes). If the output data is "FF hex," the boot block programming lockout feature is activated; if
the output data is "FE hex," the lockout feature is deactivated and the block can be programmed.
To return to normal operation, perform a three-byte command sequence to exit the identification mode.
For the specific code, see Command Codes for Identification/Boot Block Lockout Detection.
Data Polling (DQ7)- Write Status Detection
The W29C020C includes a data polling feature to indicate the end of a write cycle. When the W29C020C
is in the internal write cycle, any attempt to read DQ7 from the last byte loaded during the page/byteload cycle will receive the complement of the true data. Once the write cycle is completed. DQ7 will
show the true data. See the DATA Polling Timing Diagram.
- 4 -
W29C020C
CEOEWE
Toggle Bit (DQ6)- Write Status Detection
In addition to data polling, the W29C020C provides another method for determining the end of a write
cycle. During the internal write cycle, any consecutive attempts to read DQ6 will produce alternating 0's
and 1's. When the write cycle is completed, this toggling between 0's and 1's will stop. The device is
then ready for the next operation. See Toggle Bit Timing Diagram.
Product Identification
The product ID operation outputs the manufacturer code and device code. The programming equipment
automatically matches the device with its proper erase and programming algorithms.
The manufacturer and device codes can be accessed through software or by hardware operation. In the
software access mode, a six-byte command sequence can be used to access the product ID. A read
from address "00000 hex" outputs the manufacturer code "DA hex." A read from address "00001 hex"
outputs the device code "45 hex." The product ID operation can be terminated by a three-byte command
sequence.
In the hardware access mode, access to the product ID is activated by forcing CE and OE low, WE
high, and raising A9 to 12 volts.
TABLE OF OPERATING MODES
Operating Mode Selection
Operating Range: 0 to 70° C (Ambient Temperature), VDD = 5V ±10%, VSS = 0V, VHH = 12V
MODEPINS
ADDRESSDQ.
ReadVILVILVIHAINDout
WriteVILVIHVILAINDin
StandbyVIHXXXHigh Z
Write InhibitXVILXXHigh Z/DOUT
Software Product Identification and Boot Block Lockout Detection Acquisition Flow
ALTERNATE PRODUCT (7)
IDENTIFICATION/BOOT BLOCK
LOCKOUT DETECTION ENTRY
SOFTWARE PRODUCT
IDENTIFICATION/BOOT BLOCK
LOCKOUT DETECTION ENTRY
SOFTWARE PRODUCT
IDENTIFICATION/BOOT BLOCK
LOCKOUT DETECTION EXIT
ADDRESSDATAADDRESSDATAADDRESSDATA
Pause 10 µSPause 10 µSPause 10 µS
Product
Identification
Entry (1)
Load data AA
to
Load data 55
to
Load data 80
to
Load data AA
to
Load data 55
to
Load data 60
to
µ
Product
Identification
and Boot Block
Lockout Detection
Mode (3)
Read address = 00000
data = DA
Read address = 00001
data = 45
Read address = 00002
data = FF/FE
Read address = 3FFF2
data = FF/FE
(2)
(2)
(4)
(5)
Product
Identification
Exit (1)
Load data AA
address 5555
Load data 55
address 2AAA
Load data F0
address 5555
to
to
to
µ
Notes for software product identification/boot block lockout detection:
(1) Data Format: DQ7−DQ0 (Hex); Address Format: A14−A0 (Hex)
(2) A1−A16 = VIL; manufacture code is read for A0 = VIL; device code is read for A0 = VIH.
(3) The device does not remain in identification and boot block (address 0002 Hex/3FFF2 Hex respond to first 8K/last 8K) lockout detection
mode if power down.
(4), (5) If the output data is "FF Hex," the boot block programming lockout feature is activated; if the output data "FE Hex," the lockout feature
is inactivated and the block can be programmed.
(6) The device returns to standard operation mode.
(7) This product supports both the JEDEC standard 3 byte command code sequence and original 6 byte command code sequence. For new
designs, Winbond recommends that the 3 byte command code sequence be used.
Boot Block Lockout
Feature Set on First 8K
Address Boot Block
Load data AA
to
Boot Block Lockout
Feature Set on Last 8K
Address Boot Block
Load data AA
W29C020C
BOOT BLOCK LOCKOUT FEATURE SET
ON LAST 8K ADDRESS BOOT BLOCK
to
Load data 55
to
Load data 80
to
Load data AA
to
Load data 55
to
Load data 40
to
Load data 00
to
Pause 10 mS
Load data 55
to
Load data 80
to
Load data AA
to
Load data 55
to
Load data 40
to
Load data FF
to
Pause 10 mS
Notes for boot block lockout enable:
1. Data Format: DQ7−DQ0 (Hex)
2. Address Format: A14−A0 (Hex)
3. If you have any questions about this commend sequence, please contact the local distributor or Winbond Electronics Corp.
Publication Release Date: April 1999
- 9 -Revision A1
W29C020C
CE
CE
CE
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETERRATINGUNIT
Power Supply Voltage to VSS Potential-0.5 to +7.0V
Operating Temperature0 to +70°C
Storage Temperature-65 to +150°C
D.C. Voltage on Any Pin to Ground Potential Except A9-0.5 to VDD +1.0V
Transient Voltage (<20 nS ) on Any Pin to Ground Potential-1.0 to VDD +1.0V
Voltage on A9 and OE Pin to Ground Potential
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
-0.5 to 12.5V
Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETERSYM.TEST CONDITIONSLIMITSUNIT
MIN.TYP.MAX.
Power Supply Current
Standby VDD Current (TTL
input)
Standby VDD Current
(CMOS input)
Input Leakage Current
Output Leakage Current
ICC
ISB1
ISB2
ILIVIN = GND to VDD--10µA
ILOVIN = GND to VDD--10µA
= OE = VIL, WE = VIH,
all DQs open
Address inputs = VIL/VIH,
at f = 5 MHz
= VIH, all DQs open
Other inputs = VIL/VIH
= VDD -0.3V, all DQs open
--50mA
-23mA
-20100µA
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
(1) These parameters are characterized and not 100% tested.
(2) See TOE spec in A.C. Read Cycle Timing Parameters.
Toggle Bit Characteristics
(1)
PARAMETERSYMBOLMIN.TYP.MAX.UNIT
Data Hold TimeTDH10--nS
Hold Time
to Output Delay
High Pulse
(2)
TOEH10--nS
TOE---nS
TOEHP150--nS
Write Recovery TimeTWR0--nS
Notes:
(1) These parameters are characterized and not 100% tested.
(2) See TOE spec in A.C. Read Cycle Timing Parameters.
TIMING WAVEFORMS
Read Cycle Timing Diagram
Address A17-0
CE
OE
V
WE
DQ7-0
IH
High-Z
T
RC
T
CE
T
OE
T
OHZ
T
OH
AA
T
T
CHZ
Data ValidData Valid
High-Z
Publication Release Date: April 1999
- 13 -Revision A1
Timing Waveforms, continued
WE
CE
Controlled Write Cycle Timing Diagram
T
AS
Address A17-0
W29C020C
T
T
AH
WC
CE
OE
WE
DQ7-0
T
CS
T
OES
T
WP
Controlled Write Cycle Timing Diagram
Address A17-0
CE
OE
WE
DQ7-0
High Z
TAS
T
OES
TAH
T
T
CST CH
Data Valid
CP
Data Valid
TDS
T
CH
T
OEH
T
WPH
T
DS
T
T
DH
TWPH
OEH
Internal write starts
T
WC
- 14 -
T
DH
Internal Write Starts
Timing Waveforms, continued
DATA
Page Write Cycle Timing Diagram
Address A17-0
DQ7-0
CE
W29C020C
TWC
OE
WE
TWP
Byte 0Byte 1
Polling Timing Diagram
Address A17-0
WE
CE
T
OEH
OE
DQ7
T
DH
WPH
Byte 2
T
OE
HIGH-Z
Byte N-1
Internal Write Start
T
WR
Byte N
T
TBLC
Publication Release Date: April 1999
- 15 -Revision A1
Timing Waveforms, continued
AA
55
A0
Internal write starts
(last word)
SW2
SW1
DQ7-0
Toggle Bit Timing Diagram
WE
W29C020C
CE
OE
DQ6
TOEH
T
DH
T
OE
HIGH-Z
Page Write Timing Diagram Software Data Protection Mode
Byte/page load
cycle starts
Byte N-1
Address A17-0
WE
CE
OE
Three-byte sequence for
software data protection mode
55555555
2AAA
BLC
WP
T
SW0
T
WPH
T
Byte 0
Byte N
T
WR
WC
T
- 16 -
Timing Waveforms, continued
SW1
DQ7-0
Internal programming starts
55
Address A14-0
SW4
Internal erasing starts
T
2AAA
AA
AA
55
Reset Software Data Protection Timing Diagram
W29C020C
Address A14-0
CE
OE
WE
5555 2AAA
AA
TWP
TWPH
SW0
BLC
T
Software Chip Erase Timing Diagram
Six-byte sequence for resetting
software data protection mode
555555552AAA 5555
80AA 55
SW2
SW3SW4 SW5
Six-byte code for 5V-only software
chip erase
WC
T
20
WC
T
DQ7-0
CE
OE
WE
5555
WP
SW0
TWPH
555555552AAA 5555
5580
TBLC
SW2
SW1
SW3
- 17 -Revision A1
10
SW5
Publication Release Date: April 1999
ORDERING INFORMATION
W29C020C
PART NO.ACCESS
TIME
(nS)
W29C020C-1212050100600 mil DIP1K
W29C020CP-121205010032-pin PLCC1K
W29C020C-70B7050100600 mil DIP10K
W29C020C-90B9050100600 mil DIP10K
W29C020C-12B12050100600 mil DIP10K
W29C020CT70B7050100Type one TSOP10K
W29C020CT90B9050100Type one TSOP10K
W29C020CT12B12050100Type one TSOP10K
W29C020CP70B705010032-pin PLCC10K
W29C020CP90B905010032-pin PLCC10K
W29C020CP12B1205010032-pin PLCC10K
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in
applications where personal injury might occur as a consequence of product failure.
POWER
SUPPLY CURRENT
MAX. (mA)
STANDBY
VDD CURRENT
MAX. (µA)
PACKAGECYCLING
- 18 -
PACKAGE DIMENSIONS
1.Dimensions D Max. & S include mold flash or
2.Dimension E1 does not include interlead flash.
3.Dimensions D & E1 include mold mismatch and
6.General appearance spec. should be based on
32-pin P-DIP
W29C020C
32
1
E
116
S
2
A
A
L
32-pin TSOP
M
e
0.10(0.004)
b
θ
L
L
1
Dimension in inches
Symbol
Min. Nom. Max.Max.Nom.Min.
A
0.010
A
1
0.150
0.155
A
2
0.016
0.018
B
0.0501.27
1
B
0.010
0.008
D
17
c
D
E
0.54514.1013.9713.84
E1
e
1
0.120
L
015
a
A
e
1.650 1.66041.91 42.16
0.6000.5900.610
0.550
0.130
0.6500.63016.00 16.51
S
E
1
A
Base Plane
B
1
e
1
B
H
D
Seating Plane
eA
a
D
c
E
A
A
2
A
1
Y
Notes:
tie bar burrs.
c
are determined at the mold parting line.
4.Dimension B1 does not include dambar
protrusion/intrusion.
5.Controlling dimension: Inches.
final visual inspection spec.
Dimension in Inches
Symbol
Min. Nom. Max. Min. Nom. Max.
________
Note:
A
A
A
H D
L
1
2
b
c
D
E
e
L
1
Y
θ
____
0.002
0.007 0.008
0.005 0.006 0.007
0.720 0.724
0.311 0.315
0.780 0.787
__
0.020
0.016 0.020
__
0.031
0.0000.004
1
Dimension in mm
0.2105.33
0.25
0.160
3.81
0.022
0.41
0.0540.048
0.014
0.20
0.555
2.29 2.54 2.790.090 0.100 0.110
0.140
3.05
0.670
0.0852.16
.
0.047
0.006
0.05
0.95
0.0410.0390.037
0.17
0.009
0.12
18.30
0.728
7.90
0.319
19.80
0.795
____
0.024
____
35
3.94
4.06
0.46
0.56
1.371.22
0.25
0.36
15.49
15.2414.99
3.30
3.56
150
17.02
Dimension in mm
1.20
0.15
1.051.00
0.200.23
0.150.17
18.40 18.50
8.008.10
20.00 20.20
0.50
0.40
0.500.60
0.80
____
0.00
1
35
__
__
0.10
Controlling dimension: Millimeters
Publication Release Date: April 1999
- 19 -Revision A1
Package Dimensions, continued
1
Notes:
bcDeH
A
2
1
D
G
32-pin PLCC
H
E
E
1
324
5
13
1420
L
θ
Seating Plane
e
b
b
E
G
W29C020C
30
29
D
HD
21
2A
A
A1
y
G D
c
Dimension in InchesDimension in mm
Symbol
Min. Nom. Max.Max.Nom.Min.
A
0.020
1
A
b
0.008
0.447
E
0.490
D
G
E
H
0.485
E
L
y
θ
1. Dimensions D & E do not include interlead flash.
2. Dimension b1 does not include dambar protrusion/intrusion.
3. Controlling dimension: Inches.
4. General appearance spec. should be based on final
visual inspection sepc.
0.140
0.50
0.1150.105 0.110
0.0320.026 0.028
0.410.460.56
0.0220.0180.016
0.20
0.014
0.010
0.450
0.050
0.510
0.490
0
13.89 13.97 14.05
0.5530.5500.547
11.35
0.453
12.45 12.95 13.46
0.530
0.4300.4100.390
14.86 14.99 15.11
0.5950.5900.585
12.32
0.495
0.0950.0900.075
0.004
10
1.121.420.0440.056
9.91 10.41 10.92
1.912.29
3.56
2.802.672.93
0.710.660.81
0.35
0.25
11.51
11.43
1.27
12.57
12.45
2.41
0.10
0
10
- 20 -
VERSION HISTORY
VERSIONDATEPAGEDESCRIPTION
A1Apr. 1999-Initial Issued
W29C020C
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5796096
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-7197006
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: 886-2-7190505
FAX: 886-2-7197502
Note: All data and specifications are subject to change without notice.
Winbond Electronics (H.K.) Ltd.
Rm. 803, World Trade Square, Tower II,
123 Hoi Bun Rd., Kwun Tong,
Kowloon, Hong Kong
TEL: 852-27513100
FAX: 852-27552064
Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.
2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: 408-9436666
FAX: 408-5441798
Publication Release Date: April 1999
- 21 -Revision A1
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