Rainbow Electronics W27LE520 User Manual

Advance Information W27LE520
16
OE
64K ×× 8 ELECTRICALLY ERASABLE EPROM
GENERAL DESCRIPTION
The W27LE520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex with the 8 data lines. To cooperate with the MCU, this device could save the external TTL component, also cost and space. It requires only one supply in the range of 3.0V to 3.6V or 4.5V to
5.5V in normal read mode. The W27LE520 provides an electrical chip erase function. It will be a great convenient when you need to change/update the contents in the device.
FEATURES
High speed access time: 70/90 nS (max.)
Read operating current: 8 mA/20 mA (max.)
Erase/Programming operating current
30 mA (max.)
Standby current: 20 µA /100 µA (max.)
Unregulated battery power supply range,
3.0V to 3.6V or 4.5V to 5.5V
+13V erase and programming voltage
High Reliability CMOS Technology
- 2K V ESD Protection
- 200 mA Latchup Immunity
Fully static operation
All inputs and outputs directly LVTTL/CMOS
compatible
Three-state outputs
Available packages: 20-pin TSSOP and 20-pin
SOP
PIN CONFIGURATIONS
1
A10
2
A12
3
A14
4
ALE
5
V
OE/VPP
A15 A13 A11
OE/VPP
A15
A13
A11
A9
AD0
AD2 AD4 AD6
GND
DD
A9
6 7 8 9 10
1 2 3 4 5 6 7 8 9 10
TSSOP
Top View
SOP
Top View
20 19 18 17 16 15 14 13 12 11
BLOCK DIAGRAM
A8
20
AD1
19
AD3
18
AD5
17
AD7 GND
15
AD6
14 13
AD4 AD2
12
AD0
11
VDD
ALE A14 A12 A10 A8 AD1 AD3
PIN DESCRIPTION
SYMBOL DESCRIPTION
AD0AD7
A8A15
ALE Address Latch Enable
AD5 AD7
VDD Power Supply
GND Ground
OE / V
AD7 - AD0
A15 - A8
/VPP
ALE
V
GND
CONTROL
PP
L A T C H E S
DECODER
DD
OUTPUT BUFFER
MEMORY
ARRAY
Address/Data Inputs/Outputs Address Inputs
Output Enable, Program/Erase Supply Voltage
Publication Release Date: 4/26/2000
- 1 - Revision A1
Advance Information W27LE520
OE
OE
FUNCTIONAL DESCRIPTION
Read Mode
Unlike conventional UVEPROMs, which has CE and OE two control functions, the W27LE520 has one OE/VPP and one ALE (address_latch_enable) control functions. The ALE makes lower address
A[7:0] to be latched in the chip when it goes from high to low, so that the same bus can be used to output data during read mode. i.e. lower address A[7:0] and data bus DQ[7:0] are multiplexed.
/VPP controls the output buffer to gate data to the output pins. When addresses are stable, the
address access time (TACC) is equal to the delay from ALE to output (TCE), and data are available at the outputs TOE after the falling edge of OE/VPP, if TACC and TCE timings are met.
Erase Mode
The erase operation is the only way to change data from "0" to "1." Unlike conventional UVEPROMs, which use ultraviolet light to erase the contents of the entire chip (a procedure that requires up to half an hour), the W27LE520 uses electrical erasure. Generally, the chip can be erased within 100 mS by using an EPROM writer with a special erase algorithm.
There are two ways to enter Erase mode. One is to raise OE/VPP to VPE (13V), VDD = VDE (6.5V), A9 = VHH (13V), A10 = high A8&A11 = low, and all other address pins include AD[7:0] keep at fixed low or high. Pulsing ALE high starts the erase operation. The other way is somewhat like flash, by programming two consecutive commands into the device and then enter Erase mode. The two commands are loading Data = AA(hex) to Addr. = 5555(hex) and Data = 10(hex) to Addr. = 2AAA(hex). Be careful to note that the ALE pulse widths of these two commands are different: One is 50uS, while the other is 100mS. Please refer to the Smart Erase Algorithm 1 & 2.
Erase Verify Mode
The device will enter the Erase Verify Mode automatically after Erase Mode. Only power down the device can force the device enter Normal Read Mode again.
Program Mode
Programming is the only way to change cell data from "1" to "0." The program mode is entered when
/VPP is raised to VPP (13V), VDD = VDP (6.5V), the address pins equal the desired addresses, and
the input pins equal the desired inputs. Pulsing ALE high starts the programming operation.
Program Verify Mode
The device will enter the Program Verify Mode automatically after Program Mode. Only power down the device can force the device enter Normal Read Mode again.
Erase/Program Inhibit
Erase or program inhibit mode allows parallel erasing or programming of multiple chips with different data. When ALE low, erasing or programming of non-target chips is inhibited, so that except for the
ALE and OE/VPP pins, the W27LE520 may have common inputs.
Standby Mode
The standby mode significantly reduces VDD current. This mode is entered when ALE and OE/VPP keep high. In standby mode, all outputs are in a high impedance state.
System Considerations
- 2 -
Advance Information W27LE520
OE
An EPROM's power switching characteristics require careful device decoupling. System designers are interested in three supply current issues: standby current levels (ISB), active current levels (IDD), and transient current peaks produced by the falling and rising edges of ALE Transient current magnitudes depend on the device output's capacitive and inductive loading. Proper decoupling capacitor selection will suppress transient voltage peaks. Each device should have a
0.1 µF ceramic capacitor connected between its VDD and GND. This high frequency, low inherent­inductance capacitor should be placed as close as possible to the device. Additionally, for every eight devices, a 4.7 µF electrolytic capacitor should be placed at the array's power supply connection between VDD and GND. The bulk capacitor will overcome voltage slumps caused by PC board trace inductances.
TABLE OF OPERATING MODES
(VPP = 13V, VPE = 13V, VHH = 12V, VDP = 6.5V, VDE = 6.5V, VDD = 3.3V or 5.0V, VDI = 5.0V, X = VIH or VIL)
MODE PIN
ALE
Address Latch Enable VIH VIH X VDD A[7:0] Read VIL VIL AIN VDD DOUT Output Disable VIL VIH X VDD High Z Standby VIH VIH AIN VDD A[7:0] Program VIH VPP AIN VDP DIN Erase 1 VIH VPE A8&A11 = VIL, A9 = VPE,
Erase 2 VIH VPE First command:
Product Identifier­manufacturer
Product Identifier-device VIL VIL A8 = VIH, A9 = VHH, Others = X VDI 1F(Hex)
VIL VIL A8 = VIL, A9 = VHH, Others = X VDI DA(Hex)
/VPP
OTHER ADDRESS VDD AD[7:0]
VDE X
A10 = VIH, Others = X
VDE AA(hex)
Addr. = 5555 (hex)
Secon command:
Addr. = 2AAA (hex)
VDE 10(hex)
Publication Release Date: 4/26/2000
- 3 - Revision A1
Advance Information W27LE520
OE
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER RATING UNIT
Ambient Temperature with Power Applied -55 to +125 Storage Temperature -65 to +150 Voltage on all Pins with Respect to Ground Except
-2.0 to +7.0 V
/VPP, A9 and VDD Pins
Voltage on OE/VPP Pin with Respect to Ground
-2.0 to +7.0 V
Voltage on A9 Pin with Respect to Ground -2.0 to +7.0 V Voltage VDD Pin with Respect to Ground -2.0 to +14.0 V
Note: 1. Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of
the device.
2. Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20ns. Maximum output pin voltage is VDD+0.75V DC which may overshoot to +7.0V for pulses of less than 20ns.
DC Erase Characteristics
(TA = 25° C ±5° C, VDD = 6.5V ±0.25V)
PARAMETER SYM. CONDITIONS LIMITS UNIT
MIN. TYP. MAX.
Input Load Current ILI VIN = VIL or VIH -10 - 10 VDD Erase Current ICP
ALE = VIH, OE/VPP = VPE A8&A11 = VIL, A9 = VPE, A10 = VIH, Others = X
VPP Erase Current IPP
ALE = VIH, OE/VPP = VPE A8&A11 = VIL, A9 = VPE,
A10 = VIH, Others = X Input Low Voltage VIL - -0.3 - 0.8 V Input High Voltage VIH - 2.4 - VDD+0.3 V Output Low Voltage
VOL IOL = 2.1 mA - - 0.45 V (Verify) Output High Voltage
VOH IOH = -0.4 mA 2.4 - - ­(Verify) A9 SID Voltage VHH
VDD = 5V ± 10% A9 Erase Voltage VPE - 12.75 13 13.25 V VPP Erase Voltage VPE - 12.75 13 13.25 V VDD Supply Voltage
VDE - 6.25 6.5 6.75 V
(Erase & Erase Verify)
Note: VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.
- - 30 mA
- - 30 mA
11.5 12 12.5 V
°C °C
µA
CAPACITANCE
(VDD = 3.0V to 3.6V or 4.5V to 5.5V, TA = 25° C, f = 1 MHz)
PARAMETER SYMBOL MAX. UNIT
Input Capacitance CIN VIN = 0V 6 pF Output Capacitance COUT VOUT = 0V 12 pF
- 4 -
Advance Information W27LE520
Input
AC CHARACTERISTICS
AC Test Conditions
PARAMETER CONDITIONS
Input Pulse Levels 0V/3V Input Rise and Fall Times 10 nS Input and Output Timing Reference Level 1.5V/1.5V Output Load CL = 100 pF, IOH/IOL = -0.4 mA/2.1 mA
AC Test Load and Waveforms
+1.3V
(IN914)
3.3K ohm
D
OUT
100 pF (Including Jig and Scope)
Output
3V
0V
Test Points Test Points
1.5V
1.5V
Publication Release Date: 4/26/2000
- 5 - Revision A1
Advance Information W27LE520
OE
READ OPERATION DC CHARACTERISTICS
(VDD = 3.0V to 3.6V or 4.5V to 5.5V, TA = 0 to 70° C)
PARAMETER SYM. CONDITIONS LIMITS UNIT
MIN. TYP. MAX
.
Input Load Current ILI VIN = 0V to VDD -5 - 5 Output Leakage Current ILO VOUT = 0V to VDD -5 - 5
VDD = 3.0V to
ISB
(CMOS input)
3.6V VDD = 4.5V to
5.5V VDD = 3.0V to
3.6V VDD = 4.5V to
5.5V
Input Low Voltage VIL - -0.6 - 0.8 V Input High Voltage VIH - 2.0 - VDD
Output Low Voltage VOL IOL = 2.1 mA - - 0.4 V Output High Voltage VOH IOH = -0.4 mA 2.4 - - V
ALE = VDD ±0.3V,
/VPP = VDD ±0.3V All others inputs = GND/ VDD ±0.3V
ALE = VIL, IOUT = 0 mA f = 5 MHz
- - 20Standby VDD Current
- 100
- - 8VDD Operating Current IDD
- - 20
+0.3
µA µA µA
mA
V
READ OPERATION AC CHARACTERISTICS
(VDD = 3.0V to 3.6V or 4.5V to 5.5V, TA = 0 to 70° C)
PARAMETER SYM. W27LE520-70 W27LE520-90 UNIT
MIN. MAX. MIN. MAX
.
Address Latch Enable Access Time TCE - 70 - 90 nS Address Latch Enable Width TALE 45 - 45 - nS Address Access Time TACC - 70 - 90 nS Address Setup Time TAS 15 - 15 - nS Address Hold Time TAH 15 - 15 - nS Output Enable Access Time TOE - 35 - 35 nS
OE /VPP High to High-Z Output
Output Hold from Address Change TOH 0 - 0 - nS
Note: VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.
TDF - 25 - 25 nS
- 6 -
Advance Information W27LE520
DC PROGRAMMING CHARACTERISTICS
(VDD = 6.5V ±0.25V, TA = 25° C ±5° C)
PARAMETER SYM. CONDITIONS LIMITS UNIT
MIN. TYP. MAX.
Input Load Current ILI VIN = VIL or VIH -10 - 10 VDD Program Current ICP ALE = VIH,
OE /VPP = VPP
VPP Program Current IPP ALE = VIH,
OE /VPP = VPP
Input Low Voltage VIL - -0.3 - 0.8 V Input High Voltage VIH - 2.4 - VDD+0.5 V Output Low Voltage (Verify) VOL IOL = 2.1 mA - - 0.45 V Output High Voltage (Verify) VOH IOH = -0.4 mA 2.4 - - V A9 Silicon I.D. Voltage VHH VPP Program Voltage VPP - 12.75 13.0 13.25 V VDD Supply Voltage (Program) VDP - 6.25 6.5 6.75 V
VDD = 5V ± 10%
AC PROGRAMMING/ERASE CHARACTERISTICS
(VDD = 6.5V ±0.25V, TA = 25° C ±5° C)
PARAMETER SYM. LIMITS UNIT
OE /VPP Pulse Rise Time
Address Latch Enable Width TALE 500 - - nS ALE Program Pulse Width TPPW 47.5 50 52.5 ALE Erase Pulse Width TEPW 95 100 105 mS ALE Erase Pulse Width 1 TEPW1 47.5 50 52.5 ALE Erase Pulse Width 2 TEPW2 95 100 105 mS Latched Address Setup Time TLAS 100 - - nS Latched Address Hold Time TLAH 100 - - nS Address Setup Time TAS 2.0 - ­Address Hold Time TAH 0 - -
OE /VPP Setup Time OE /VPP Hold Time
Data Setup Time TDS 2.0 - ­Data Hold Time TDH 2.0 - -
Data Valid from OE /VPP Low during Erase Verify Data Valid from OE /VPP Low during Program Verify
OE /VPP High to Output High Z OE /VPP High Voltage Delay After ALE Low OE /VPP Recovery Time
Note: VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.
TPRT 50 - - nS
TOES 2.0 - ­TOEH 2.0 - -
TEOE - - 150 nS TPOE - - 150 nS TDFP 0 - 130 nS
TVS 2.0 - ­TVR 2.0 - -
- - 30 mA
- - 30 mA
11.5 12.0 12.5 V
MIN. TYP. MAX.
µA
µS
µS
µS µS µS
µS µS
µS
µS µS
Publication Release Date: 4/26/2000
- 7 - Revision A1
TIMING WAVEFORMS
AC Read Waveform
V
ALE
IH
V
IL
V
IH
V
IL
V
IH
V
IL
High Z
A8-A15
OE/Vpp
AD0-AD7
Advance Information W27LE520
Address Valid
ALE
T
CE
T
T
TAS
Address
OE
TAH
Data
ACC
T
TOH
DF
T
High Z
Programming Waveform
V
A[15:8]
OE/Vpp
ALE
AD[7:0]
V
13V
V
V
V
V
V V
IH
IL
T
RPT
IH
IL
T
LAS
VS
ALE
T
IH
IL
IH
IL
T
PROGRAM PROGRAM (VERIFY)
AST
Address Stable
T
OES
OEH
T
T
VR
ALET
T
POE
Add
Add
T
PPW
T
T
T
LAH
DS
DH
Data in
DFP
T
Data out
AHT
- 8 -
Timing Waveforms, continued
Erase Waveform 1
Advance Information W27LE520
A[15:8]
AD[7:0]
13.0V
OE/Vpp
ALE
Erase Waveform 2
Read Company SID
V V
13.0V V
V
IH IL
IH IL
A[15:8]
OE/Vpp
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
Read Device SID
DD
V =3.3 or 5.0V A9=12.0 V
Others=V
or V
IL
A8=VIL
DA
Read Company SID
DD
V = 3.3 or 5.0V
Read Device SID
Chip Erase Erase (Verify)
DD
V = 6.5V
A9 = 12.0V A9 = 13.0V
IH
1F
Others = V
A8, A11 = V A10 = V
Others = VIL
A8 = VIL
DA
or V
A8 = V
IH
TPRT
T
OES
Chip Erase
Command 1 Command 2 V =6.5V
DD
AST
A[15:8] = 55
A8=V
IH
IH
TRPT
1F
VS
T
T
PRT
OES
T
OEH
T
IH
TEPW
ILor V
IL
IH
T
OEH
V =6.5V
DD
A[15:8] = 2A
DD
V = 6.5V
Address Valid
Add
T
VR
D
OUT
T
EOE
Erase Verify
V =6.5V
DD
Address Valid
Add
D
OUT
V
IH
ALE
V
AD[7:0]
IL
V
IH
V
IL
T
OES
T
LAS
T
ALE
LAH
T
55 AA
T
T
EPW1
DS
Note: First command Address = 5555(hex) with Data = AA(hex) Second command Address = 2AAA(hex) with Data = 10(hex)
T
EOE
EPW2
T
T
DH
AA
10
Publication Release Date: 4/26/2000
- 9 - Revision A1
Advance Information W27LE520
SMART PROGRAMMING ALGORITHM 1
Start
Address = First Location
V = 6.5V
DD
OE/Vpp = 13V
Increment Address
Increment
Address
Last
Address ?
Power
Down
No
Yes
No
Pass
Program One 50 S Pulse
Address = First Location
Program One 50 S Pulse
V = 3.3 or 5.0V
DD
OE/Vpp = V
µ
Last
Address ?
Yes
X = 0
Verify
Byte
µ
IL
Fail
No
Increment X
X = 25 ?
Yes
Compare
All Bytes to
Original
Data
Pass
Device Passed
- 10 -
Fail
Device Failed
Advance Information W27LE520
SMART PROGRAMMING ALGORITHM 2
Address = First Location
V = 6.5V
DD
Start
X = 0
Increment
Address
Fail
Program One 50 S Pulse
OE/Vpp = 13V
µ
Increment X
X = 25?
No
Verify One Byte
OE/Vpp = V
IL
Pass
No
Last Address ?
Yes
Power Down
V =3.3or5.0V
DD
Compare
All Bytes to
Original
Data
Yes
Verify One Byte
OE/Vpp = V
Fail
Fail
IL
Pass
Pass
Device Passed
Device Failed
Publication Release Date: 4/26/2000
- 11 - Revision A1
SMART ERASE ALGORITHM 1
Advance Information W27LE520
Start
X = 0
V = 6.5V
DD
OE/Vpp = 13V
Increment
Address
A9 = 13V; A8&A11 = V A10 = V
Chip Erase 100 mS Pulse
Address = First Location
Increment X
V = 6.5VDD
OE/Vpp = V
No
Address?
IH
IL
Erase
Verify
Pass
Last
Yes
Power Down
IL
No
Fail
X = 20?
Yes
V = 3.3 or 5.0VDD
OE/Vpp = V
Compare
All Bytes to
FFs (HEX)
Pass Device
IL
Fail
Pass
Fail Device
- 12 -
SMART ERASE ALGORITHM 2
Advance Information W27LE520
Start
X = 0
V = 6.5V
DD
OE/Vpp = 13V
Increment
Address
Program One 50 S Pulse
with Address = 5555(Hex) Data = AA(Hex)
Program One 100 mS Pulse
with Address = 2AAA(Hex) Data = 10(Hex)
Increment X
OE/Vpp = V
No
V = 3.3 or 5.0V
DD
OE/Vpp = V
µ
V = 6.5V
DD
Erase
Verify
Pass
Last
Address?
Yes
Power
Down
IL
Fail
IL
No
X = 20?
Yes
Compare
All Bytes to
FFs (HEX)
Pass
Pass
Device
Fail
Fail
Device
Publication Release Date: 4/26/2000
- 13 - Revision A1
ORDERING INFORMATION
Advance Information W27LE520
PART NO. ACCESS
TIME
(nS)
OPERATING
CURRENT
MAX. (mA)
STANDBY
CURRENT
MAX. (µµA)
PACKAGE
W27LE520W-70* 70 8/20 20/100 173mil TSSOP W27LE520W-90* 90 8/20 20/100 173mil TSSOP W27LE520S-70* 70 8/20 20/100 300mil SOP W27LE520S-90* 90 8/20 20/100 300mil SOP
Notes:
1. The Part No is preliminary and might be changed after project is consoled.
2. Winbond reserves the right to make changes to its products without prior notice.
3. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure.
- 14 -
PACKAGE DIMENSIONS
20-pin TSSOP
Advance Information W27LE520
20-pin SOP
c
b
1
EE
e
D
A
1
A
b
1
E
E
e
D
1
A
L
Dimension in Inches
Symbol
Min. Nom. Max.
A
0.002
1
A L D
0.246
E
0.169 0.176
1
θ
c
L
E
0.007
b
0.003 0.007
c e
θ
Symbol
A A
0.65 BSC
0
Dimension in Inches
Min. Nom. Max.
0.092 2.34
0.003
1
L D
0.393
E
0.291 0.299
1
θ
A
E
0.013
b
0.009 0.013
c
e
0
θ
0.50 BSC
Dimension in mm
Min. Nom. Max.
0.043
0.05
0.006
0.50
6.40
0.256
6.25
4.30
0.18
0.012
0.09
0.256 BSC
8 0 8
Dimension in mm
Min. Nom. Max.
0.105
0.076
0.012
0.381
12.6
9.98
0.420
7.39
0.330
0.020
0.229
1.27 BSC
8 0 8
1.10
0.15
0.700.0280.020
6.600.2600.252
6.50
4.48
0.30
0.18
2.67
0.305
0.8890.0350.015
13.00.5130.497
10.7
7.60
0.508
0.330
Publication Release Date: 4/26/2000
- 15 - Revision A1
Advance Information W27LE520
VERSION HISTORY
VERSION DATE PAGE DESCRIPTION
A1 4/26/2000 - Initial Issued
Headquarters
No. 4, Creation Rd. III, Science-Based Industrial Park, Hsinchu, Taiwan TEL: 886-3-5770066 FAX: 886-3-5796096 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-7197006
Winbond Electronics (H.K.) Ltd.
Rm. 803, World Trade Square, Tower II, 123 Hoi Bun Rd., Kwun Tong, Kowloon, Hong Kong TEL: 852-27513100 FAX: 852-27552064
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-7190505 FAX: 886-2-7197502
Note: All data and specifications are subject to change without notice.
- 16 -
Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab.
2727 N. First Street, San Jose, CA 95134, U.S.A. TEL: 408-9436666
FAX: 408-5441798
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