The W27LE520 is a high speed, low power Electrically Erasable and Programmable Read Only
Memory organized as 65,536 × 8 bits. It includes latches for the lower 8 address lines to multiplex
with the 8 data lines. To cooperate with the MCU, this device could save the external TTL
component, also cost and space. It requires only one supply in the range of 3.0V to 3.6V or 4.5V to
5.5V in normal read mode. The W27LE520 provides an electrical chip erase function. It will be a
great convenient when you need to change/update the contents in the device.
FEATURES
• High speed access time: 70/90 nS (max.)
• Read operating current: 8 mA/20 mA (max.)
• Erase/Programming operating current
30 mA (max.)
• Standby current: 20 µA /100 µA (max.)
• Unregulated battery power supply range,
3.0V to 3.6V or 4.5V to 5.5V
• +13V erase and programming voltage
• High Reliability CMOS Technology
- 2K V ESD Protection
- 200 mA Latchup Immunity
• Fully static operation
• All inputs and outputs directly LVTTL/CMOS
compatible
• Three-state outputs
• Available packages: 20-pin TSSOP and 20-pin
SOP
PIN CONFIGURATIONS
1
A10
2
A12
3
A14
4
ALE
5
V
OE/VPP
A15
A13
A11
OE/VPP
A15
A13
A11
A9
AD0
AD2
AD4
AD6
GND
DD
A9
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
TSSOP
Top View
SOP
Top View
20
19
18
17
16
15
14
13
12
11
BLOCK DIAGRAM
A8
20
AD1
19
AD3
18
AD5
17
AD7
GND
15
AD6
14
13
AD4
AD2
12
AD0
11
VDD
ALE
A14
A12
A10
A8
AD1
AD3
PIN DESCRIPTION
SYMBOLDESCRIPTION
AD0−AD7
A8−A15
ALEAddress Latch Enable
AD5
AD7
VDDPower Supply
GNDGround
OE / V
AD7 - AD0
A15 - A8
/VPP
ALE
V
GND
CONTROL
PP
L
A
T
C
H
E
S
DECODER
DD
OUTPUT
BUFFER
MEMORY
ARRAY
Address/Data Inputs/Outputs
Address Inputs
Output Enable, Program/Erase
Supply Voltage
Publication Release Date: 4/26/2000
- 1 -Revision A1
Advance Information W27LE520
OE
OE
FUNCTIONAL DESCRIPTION
Read Mode
Unlike conventional UVEPROMs, which has CE and OE two control functions, the W27LE520 has
one OE/VPP and one ALE (address_latch_enable) control functions. The ALE makes lower address
A[7:0] to be latched in the chip when it goes from high to low, so that the same bus can be used to
output data during read mode. i.e. lower address A[7:0] and data bus DQ[7:0] are multiplexed.
/VPP controls the output buffer to gate data to the output pins. When addresses are stable, the
address access time (TACC) is equal to the delay from ALE to output (TCE), and data are available at
the outputs TOE after the falling edge of OE/VPP, if TACC and TCE timings are met.
Erase Mode
The erase operation is the only way to change data from "0" to "1." Unlike conventional UVEPROMs,
which use ultraviolet light to erase the contents of the entire chip (a procedure that requires up to half
an hour), the W27LE520 uses electrical erasure. Generally, the chip can be erased within 100 mS by
using an EPROM writer with a special erase algorithm.
There are two ways to enter Erase mode. One is to raise OE/VPP to VPE (13V), VDD = VDE (6.5V), A9
= VHH (13V), A10 = high A8&A11 = low, and all other address pins include AD[7:0] keep at fixed low
or high. Pulsing ALE high starts the erase operation. The other way is somewhat like flash, by
programming two consecutive commands into the device and then enter Erase mode. The two
commands are loading Data = AA(hex) to Addr. = 5555(hex) and Data = 10(hex) to Addr. =
2AAA(hex). Be careful to note that the ALE pulse widths of these two commands are different: One is
50uS, while the other is 100mS. Please refer to the Smart Erase Algorithm 1 & 2.
Erase Verify Mode
The device will enter the Erase Verify Mode automatically after Erase Mode. Only power down the
device can force the device enter Normal Read Mode again.
Program Mode
Programming is the only way to change cell data from "1" to "0." The program mode is entered when
/VPP is raised to VPP (13V), VDD = VDP (6.5V), the address pins equal the desired addresses, and
the input pins equal the desired inputs. Pulsing ALE high starts the programming operation.
Program Verify Mode
The device will enter the Program Verify Mode automatically after Program Mode. Only power down
the device can force the device enter Normal Read Mode again.
Erase/Program Inhibit
Erase or program inhibit mode allows parallel erasing or programming of multiple chips with different
data. When ALE low, erasing or programming of non-target chips is inhibited, so that except for the
ALE and OE/VPP pins, the W27LE520 may have common inputs.
Standby Mode
The standby mode significantly reduces VDD current. This mode is entered when ALE and OE/VPP
keep high. In standby mode, all outputs are in a high impedance state.
System Considerations
- 2 -
Advance Information W27LE520
OE
An EPROM's power switching characteristics require careful device decoupling. System designers are
interested in three supply current issues: standby current levels (ISB), active current levels (IDD), and
transient current peaks produced by the falling and rising edges of ALE Transient current magnitudes
depend on the device output's capacitive and inductive loading. Proper decoupling capacitor selection
will suppress transient voltage peaks. Each device should have a
0.1 µF ceramic capacitor connected between its VDD and GND. This high frequency, low inherentinductance capacitor should be placed as close as possible to the device. Additionally, for every eight
devices, a 4.7 µF electrolytic capacitor should be placed at the array's power supply connection
between VDD and GND. The bulk capacitor will overcome voltage slumps caused by PC board trace
inductances.
TABLE OF OPERATING MODES
(VPP = 13V, VPE = 13V, VHH = 12V, VDP = 6.5V, VDE = 6.5V, VDD = 3.3V or 5.0V, VDI = 5.0V, X = VIH or VIL)
Ambient Temperature with Power Applied-55 to +125
Storage Temperature-65 to +150
Voltage on all Pins with Respect to Ground Except
-2.0 to +7.0V
/VPP, A9 and VDD Pins
Voltage on OE/VPP Pin with Respect to Ground
-2.0 to +7.0V
Voltage on A9 Pin with Respect to Ground-2.0 to +7.0V
Voltage VDD Pin with Respect to Ground-2.0 to +14.0V
Note: 1. Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of
the device.
2. Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20ns. Maximum output pin voltage is
VDD+0.75V DC which may overshoot to +7.0V for pulses of less than 20ns.
DC Erase Characteristics
(TA = 25° C ±5° C, VDD = 6.5V ±0.25V)
PARAMETERSYM. CONDITIONSLIMITSUNIT
MIN.TYP.MAX.
Input Load Current ILIVIN = VIL or VIH-10-10
VDD Erase Current ICP
ALE = VIH, OE/VPP = VPE
A8&A11 = VIL, A9 = VPE,
A10 = VIH, Others = X
VPP Erase Current IPP
ALE = VIH, OE/VPP = VPE
A8&A11 = VIL, A9 = VPE,
A10 = VIH, Others = X
Input Low Voltage VIL--0.3-0.8V
Input High Voltage VIH-2.4-VDD+0.3V
Output Low Voltage
VOLIOL = 2.1 mA--0.45V
(Verify)
Output High Voltage
VOHIOH = -0.4 mA2.4 --(Verify)
A9 SID Voltage VHH
VDD = 5V ± 10%
A9 Erase Voltage VPE-12.751313.25V
VPP Erase Voltage VPE-12.751313.25V
VDD Supply Voltage
VDE-6.256.56.75V
(Erase & Erase Verify)
Note: VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.
--30mA
--30mA
11.51212.5V
°C
°C
µA
CAPACITANCE
(VDD = 3.0V to 3.6V or 4.5V to 5.5V, TA = 25° C, f = 1 MHz)
Note: VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.
TDF-25-25nS
- 6 -
Advance Information W27LE520
DC PROGRAMMING CHARACTERISTICS
(VDD = 6.5V ±0.25V, TA = 25° C ±5° C)
PARAMETERSYM. CONDITIONSLIMITSUNIT
MIN.TYP.MAX.
Input Load CurrentILIVIN = VIL or VIH-10-10
VDD Program CurrentICPALE = VIH,
OE /VPP = VPP
VPP Program CurrentIPPALE = VIH,
OE /VPP = VPP
Input Low VoltageVIL--0.3-0.8V
Input High VoltageVIH-2.4-VDD+0.5V
Output Low Voltage (Verify)VOLIOL = 2.1 mA--0.45V
Output High Voltage (Verify)VOHIOH = -0.4 mA2.4--V
A9 Silicon I.D. VoltageVHH
VPP Program VoltageVPP-12.7513.013.25V
VDD Supply Voltage (Program)VDP-6.256.56.75V
VDD = 5V ± 10%
AC PROGRAMMING/ERASE CHARACTERISTICS
(VDD = 6.5V ±0.25V, TA = 25° C ±5° C)
PARAMETERSYM.LIMITSUNIT
OE /VPP Pulse Rise Time
Address Latch Enable WidthTALE500--nS
ALE Program Pulse WidthTPPW47.55052.5
ALE Erase Pulse WidthTEPW95100105mS
ALE Erase Pulse Width 1TEPW147.55052.5
ALE Erase Pulse Width 2TEPW295100105mS
Latched Address Setup TimeTLAS100--nS
Latched Address Hold TimeTLAH100--nS
Address Setup TimeTAS2.0-Address Hold TimeTAH0--
OE /VPP Setup Time
OE /VPP Hold Time
Data Setup TimeTDS2.0-Data Hold TimeTDH2.0--
Data Valid from OE /VPP Low during Erase Verify
Data Valid from OE /VPP Low during Program Verify
OE /VPP High to Output High Z
OE /VPP High Voltage Delay After ALE Low
OE /VPP Recovery Time
Note: VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.
TPRT50--nS
TOES2.0-TOEH2.0--
TEOE--150nS
TPOE--150nS
TDFP0-130nS
TVS2.0-TVR2.0--
--30mA
--30mA
11.512.012.5V
MIN.TYP.MAX.
µA
µS
µS
µS
µS
µS
µS
µS
µS
µS
µS
Publication Release Date: 4/26/2000
- 7 -Revision A1
TIMING WAVEFORMS
AC Read Waveform
V
ALE
IH
V
IL
V
IH
V
IL
V
IH
V
IL
High Z
A8-A15
OE/Vpp
AD0-AD7
Advance Information W27LE520
Address Valid
ALE
T
CE
T
T
TAS
Address
OE
TAH
Data
ACC
T
TOH
DF
T
High Z
Programming Waveform
V
A[15:8]
OE/Vpp
ALE
AD[7:0]
V
13V
V
V
V
V
V
V
IH
IL
T
RPT
IH
IL
T
LAS
VS
ALE
T
IH
IL
IH
IL
T
PROGRAMPROGRAM (VERIFY)
AST
Address Stable
T
OES
OEH
T
T
VR
ALET
T
POE
Add
Add
T
PPW
T
T
T
LAH
DS
DH
Data in
DFP
T
Data out
AHT
- 8 -
Timing Waveforms, continued
Erase Waveform 1
Advance Information W27LE520
A[15:8]
AD[7:0]
13.0V
OE/Vpp
ALE
Erase Waveform 2
Read
Company
SID
V
V
13.0V
V
V
IH
IL
IH
IL
A[15:8]
OE/Vpp
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
Read
Device
SID
DD
V =3.3 or 5.0V
A9=12.0 V
Others=V
or V
IL
A8=VIL
DA
Read
Company
SID
DD
V = 3.3 or 5.0V
Read
Device
SID
Chip EraseErase (Verify)
DD
V = 6.5V
A9 = 12.0VA9 = 13.0V
IH
1F
Others = V
A8, A11 = V
A10 = V
Others = VIL
A8 = VIL
DA
or V
A8 = V
IH
TPRT
T
OES
Chip Erase
Command 1Command 2
V =6.5V
DD
AST
A[15:8] = 55
A8=V
IH
IH
TRPT
1F
VS
T
T
PRT
OES
T
OEH
T
IH
TEPW
ILor V
IL
IH
T
OEH
V =6.5V
DD
A[15:8] = 2A
DD
V = 6.5V
Address Valid
Add
T
VR
D
OUT
T
EOE
Erase Verify
V =6.5V
DD
Address Valid
Add
D
OUT
V
IH
ALE
V
AD[7:0]
IL
V
IH
V
IL
T
OES
T
LAS
T
ALE
LAH
T
55AA
T
T
EPW1
DS
Note: First command Address = 5555(hex) with Data = AA(hex)
Second command Address = 2AAA(hex) with Data = 10(hex)
1. The Part No is preliminary and might be changed after project is consoled.
2. Winbond reserves the right to make changes to its products without prior notice.
3. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications
where personal injury might occur as a consequence of product failure.
- 14 -
PACKAGE DIMENSIONS
20-pin TSSOP
Advance Information W27LE520
20-pin SOP
c
b
1
EE
e
D
A
1
A
b
1
E
E
e
D
1
A
L
Dimension in Inches
Symbol
Min. Nom. Max.
A
0.002
1
A
L
D
0.246
E
0.1690.176
1
θ
c
L
E
0.007
b
0.0030.007
c
e
θ
Symbol
A
A
0.65 BSC
0
Dimension in Inches
Min. Nom. Max.
0.0922.34
0.003
1
L
D
0.393
E
0.2910.299
1
θ
A
E
0.013
b
0.0090.013
c
e
0
θ
0.50 BSC
Dimension in mm
Min. Nom. Max.
0.043
0.05
0.006
0.50
6.40
0.256
6.25
4.30
0.18
0.012
0.09
0.256 BSC
808
Dimension in mm
Min. Nom. Max.
0.105
0.076
0.012
0.381
12.6
9.98
0.420
7.39
0.330
0.020
0.229
1.27 BSC
808
1.10
0.15
0.700.0280.020
6.600.2600.252
6.50
4.48
0.30
0.18
2.67
0.305
0.8890.0350.015
13.00.5130.497
10.7
7.60
0.508
0.330
Publication Release Date: 4/26/2000
- 15 -Revision A1
Advance Information W27LE520
VERSION HISTORY
VERSIONDATEPAGEDESCRIPTION
A14/26/2000-Initial Issued
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5796096
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-7197006
Winbond Electronics (H.K.) Ltd.
Rm. 803, World Trade Square, Tower II,
123 Hoi Bun Rd., Kwun Tong,
Kowloon, Hong Kong
TEL: 852-27513100
FAX: 852-27552064
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: 886-2-7190505
FAX: 886-2-7197502
Note: All data and specifications are subject to change without notice.
- 16 -
Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.
2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: 408-9436666
FAX: 408-5441798
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