• Direct Driving of 6 External NMOS Transistors with a Maximum Switching Frequency of
50 kHz
• Integrated Charge Pump to Provide Gate Voltages for High-side Drivers and to Supply
the Gate of the External Battery Reverse Protection NMOS
• Built-in 5V/3.3V Voltage Regulator with Current Limitation
• Reset Signal for the Microcontroller
• Sleep Mode with Supply Current of typically < 45 µA
• Wake-up via LIN Bus or High Voltage Input
• Programmable Window Watchdog
• Battery Overvoltage Protection and Battery Undervoltage Management
• Overtemperature Warning and Protection (Shutdown)
• 200 mA Peak Current for Each Output Driver
• LIN Transceiver Conformal to LIN 2.1 and SAEJ2602-2 with Outstanding EMC and ESD
Performance
• QFN48 Package 7 mm × 7 mm
= 125°C, TJ = 150°C
A
= 150°C, TJ = 200°C
A
BLDC Motor
Driver and LIN
System Basis
Chip
ATA6833
1.Description
The ATA6833 and ATA6834 are system basis chips for three-phase brushless DC
motor controllers designed in Atmel
SMART-I.S.
FETs, the system basis chip forms a BLDC motor control unit for automotive
applications. In addition, the circuits provide a 3.3V/5V linear regulator and a window
watchdog.
The circuit includes various control and protection functions like overvoltage and overtemperature protection, short circuit detection, and undervoltage management.
Thanks to these function blocks, the driver fulfils a maximum of safety requirements
and offers a high integration level to save cost and space in various applications. The
target applications are most suitable for the automotive market due to the robust technology and the high qualification level. ATA6834, in particular, is designed for
applications in a high-temperature environment.
™
1. In combination with a microcontroller and six discrete power MOS-
®
’s state-of-the-art 0.8 µm SOI technology
ATA6834
Preliminary
9122B–AUTO–10/08
Figure 1-1.Block Diagram
Supervisor:
Short Circuit
Overtemperature
Undervoltage
CP
VBATSW VINTVBAT
VBAT
PBAT
VG
LINEN1
CPLO2CPLO1
CPOUTCPHI2CPHI1
CC
Timer
WD
Timer
VBG
LIN
Hall A
Hall B
Hall C
ATA6833/34
Logic Control
Oscillator
VINT 5V
Regulator
13V
Regulator
Microcontroller
High-side
Driver 1
High-side
Driver 2
High-side
Driver 3
3.3/5V VCC
Regulator
Low-side
Driver 3
Low-side
Driver 2
Low-side
Driver 1
L2
L1
L3
VMODE
H2
H3
DG3
/RESET
DG2
DG1
WD
IH1-3
IL1-3
TX
RX
VCC
H1
S2
S3
S1
RWD WDDGNDEN2PGND
M
Hall A
Hall C
Hall B
CC
2
ATA6833/ATA6834 [Preliminary]
9122B–AUTO–10/08
2.Pin Configuration
Figure 2-1.Pinning QFN48
VMODE
VINT
RWD
CC
/RESET
WD
WDD
EN1
NC
NC
GND
NC
ATA6833/ATA6834 [Preliminary]
VG
L1
L2
L3
VBAT
EN2
VBATSW
48 47 46 45 44 43 42 41 40 39 3837
1
2
3
4
5
6
ATA6833/ATA6834
7
8
9
10
11
12
13 14 15 16 17 18 19 20 21 22 23 24
NC
LIN
TXD
PGND
NC
VCC
Atmel YWW
ZZZZZ-AL
IL2
IL3
IH3
IH2
IL1
IH1
RXD
NC
PBAT
36
35
34
33
32
31
30
29
28
27
26
25
DG1
CPLO1
CPHI1
CPLO2
CPHI2
CPOUT
S1
H1
S2
H2
S3
H3
DG3
DG2
Note:YWW Date code (Y = Year - above 2000, WW = week number)
ATA683x Product name
ZZZZZ Wafer lot number
AL Assembly sub-lot number
Table 2-1.Pin Description
PinSymbolI/OFunction
1VMODEISelector for V
2VINTI/OBlocking capacitor
3RWDIResistor defining the watchdog interval
4CCI/ORC combination to adjust cross conduction time
5/RESETOReset signal for microcontroller
6WDIWatchdog trigger signal
7WDDIEnable and disable the watchdog
8EN1IMicrocontroller output to switch system in Sleep Mode
9N.C.Connect to GND
10N.C.Connect to GND
11GNDIGround
12NCConnect to GND
13LINI/OLIN-bus terminal
14NCConnect to GND
15TXDITransmit signal to LIN bus from microcontroller
16IL3IControl Input for output L3
17IH3IControl Input for output H3
and interface logic voltage level
CC
9122B–AUTO–10/08
3
Table 2-1.Pin Description
PinSymbolI/OFunction
18IL2IControl Input for output L2
19IH2IControl Input for output H2
20IL1IControl Input for output L1
21IH1IControl Input for output H1
22RXDOReceive signal from LIN bus for microcontroller
23DG1ODiagnostic output 1
24DG2ODiagnostic output 2
25DG3ODiagnostic output 3
26H3OGate voltage high-side 3
27S3I/OVoltage at half bridge 3
28H2OGate voltage high-side 2
29S2I/OVoltage at half bridge 2
30H1OGate voltage high-side 1
31S1I/OVoltage at half bridge 1
32CPOUTI/OCharge pump output capacitor
33CPHI2ICharge pump capacitor 2
34CPLO2OCharge pump capacitor 2
35CPHI1ICharge pump capacitor 1
36CPLO1OCharge pump capacitor 1
37NCConnect to GND
38PBATIPower supply (after reverse protection) for charge pump and gate drivers
39VGI/OBlocking capacitor
40L1OGate voltage H-bridge, low-side 1
41L2OGate voltage H-bridge, low-side 2
42L3OGate voltage H-bridge, low-side 3
43PGNDIPower ground for H-bridge and charge pump
44VCCO5V/100 mA supply for microcontroller
45NCConnect to GND
46VBATISupply voltage for IC core (after reverse protection)
47EN2I High voltage enable input
48VBATSWO100Ω PMOS switch from V
BAT
4
ATA6833/ATA6834 [Preliminary]
9122B–AUTO–10/08
ATA6833/ATA6834 [Preliminary]
3.Functional Description
3.1Power Supply Unit with Supervisor Functions
3.1.1Power Supply
The IC has to be supplied by a reverse-protected battery voltage. To prevent damage to the IC,
proper external protection circuitry has to be added. It is recommended to use at least one
capacitor combination of storage and RF capacitors behind the reverse protection circuitry,
which is connected close to the VBAT and GND pins of the IC.
A fully integrated low-power and low-drop regulator (VINT regulator), stabilized by an external
blocking capacitor, provides the necessary low-voltage supply needed for the wake-up process.
A trimmed low-power band gap is used as reference for the VINT regulator as well as for the
VCC regulator. All internal blocks are supplied by VINT regulator. VINT regulator must not be
used for any external supply purposes.
Nothing inside the IC except the logic interface to the external microcontroller is supplied by the
5V/3.3V VCC regulator.
Both voltage regulators are checked by a “power-good comparator”, which keeps the whole chip
in reset as long as the internal supply voltage (VINT regulator output) is too low and generates a
reset for the external microcontroller if the output voltage of the VCC regulator is not sufficient.
3.1.2VBatt Switch
This high-voltage switch provides the battery voltage at pin VBATSW for various purposes. It is
switched ON after power on reset when the IC transits to Active Mode and it will only turn OFF
when the IC changes to Sleep Mode. Watchdog resets do not have an effect on the switch. The
switch can be used for measuring purposes as well as to switch on external voltage regulators.
3.1.3Voltage Supervisor
This function is implemented to protect the IC and the external power MOS transistors from
damage due to overvoltage on PBAT input. In the event of overvoltage (V
(V
), the external NMOS motor driver transistors will be switched off. The failure state will be
THUV
flagged on DG2 pin. It is recommended to block PBAT with an external RF capacitor to suppress
high frequency disturbances.
3.1.4Temperature Supervisor
An integrated temperature sensor prevents the IC from overheating. If the temperature is above
the overtemperature pre-warning threshold T
HIGH to signal this event to the external microcontroller. The microcontroller should take actions
to reduce the power dissipation in the IC. If the temperature rises above the overtemperature
shutdown threshold T
transceiver will be switched OFF immediately and the /RESET signal will go LOW. Both thresholds have a built-in hysteresis to avoid oscillations. The IC will return to normal operation (Active
Mode) when it has cooled down below the shutdown threshold. When the junction temperature
drops below the pre-warning threshold, bit DG3 will be switched LOW.
J switch off
) or undervoltage
THOV
, the diagnostic pin DG3 will be switched to
JPW set
, the VCC regulator and all output drivers together with the LIN
9122B–AUTO–10/08
5
3.2Active Mode and Sleep Mode
Sleep Mode
LIN
VCC
EN1
Active ModeActive Mode
T
bus
= 90 µsRegulator Wake-up Time = 4 × T
OSC
T
gotosleep
= 10 µs
T
debounce
The IC has two modes: Sleep Mode and Active Mode. Switching between the modes is
described below. By default the IC starts in Active Mode (which means normal operation) after
power-on. A Go to Sleep procedure switches the IC from Active Mode to Sleep Mode (standby).
A Go to Active procedure brings the IC back from Sleep Mode to Active Mode. When in Sleep
Mode the internal 5V supply (VINT regulator), the EN2 pin input structure, and a certain part of
the LIN receiver remain active to ensure a proper startup of the system. The VCC regulator is
turned off.
The Go to Sleep and Go to Active procedures are implemented as follows:
Go to Sleep:
Pin EN1 is a low-voltage input supplied by the VCC regulator. It is ESD protected by diodes
against VCC and GND. Thus the input voltage at pin EN1 must not go below GND or exceed the
output voltage of the VCC regulator. A transition from HIGH to LOW followed by a permanent
LOW signal for a minimum time period t
Sleep Mode as the EN1 is edge triggered. V
to keep EN1 LOW during normal operation.
Go to Active Using Pin EN2:
Pin EN2 is a high-voltage input for external wake-up signals. Its input structure consists of a
comparator with a built-in hysteresis. It is ESD-protected by diodes against GND and V
and for this reason the applied input voltage must not go below GND or exceed V
EN2 up to V
Go to Active Using the LIN Interface:
switches the IC to Active Mode. EN2 is debounced and edge triggered.
BAT
gotosleep
(typical 10 µs) at pin EN1 switches the IC to
is switched off in Sleep Mode. It is recommended
CC
BAT
, B,
BAT
. Pulling
Using the LIN interface provides a second possibility to wake-up the IC (see Figure 3-1). A falling edge at pin LIN followed by a dominant bus level maintained for a minimum time period
(T
) and ending with a rising edge leads to a remote wake-up request. The device switches
bus
from Sleep Mode to Active Mode. The VCC regulator is activated and the internal LIN slave termination resistor is switched on.
Figure 3-1.Wake-up Using the LIN Interface
6
ATA6833/ATA6834 [Preliminary]
9122B–AUTO–10/08
ATA6833/ATA6834 [Preliminary]
0
5
10
15
20
25
30
35
40
0255075100125150
Load Current (mA)
ESR (Ω)
ESR versus Load Current at Pin VCC
ESR
min
(C
VCC
= 2.2 µF)
ESR
max
(C
VCC
= 2.2 µF)
0
5
10
15
20
25
0255075100125150
ESR (Ω)
Load Current (mA)
ESR versus Load Current at Pin VCC
ESR
max
(C
VCC
= 10 µF)
ESR
min
(C
VCC
= 10 µF)
3.35V/3.3V VCC Regulator
The 5V/3.3V regulator is fully integrated. It requires an external electrolytic capacitor in the range
of 2.2 µF up to 10 µF and with an ESR in the range from 2Ω to 15Ω for stability (see Figure 3-2).
The output voltage can be configured as either 5V or 3.3V by connecting pin VMODE to either
pin VINT or GND. Since the regulator is not designed to be switched between both output voltages during operation, it is advisable to hard-wire VMODE pin. The logic levels of the
microcontroller interface are adapted to the VCC regulator output voltage. The maximum output
current (I
80 mA. The VCC regulator has a built-in short circuit protection. A comparator checks the output
voltage of the VCC regulator and keeps the external microcontroller in reset as long as the voltage is below the lower operation minimum (shown in Figure 3-33).
Figure 3-2.ESR versus Load Current for External Capacitors with Different Values
) of the regulator is 100 mA. For TJ> 150°C the I
OS1
of ATA6834 is reduced to
OS1
Figure 3-3./RESET as Function of the VCC Output Voltage
100% VCC
9122B–AUTO–10/08
VCC
88% VCC
80% VCC
/RESET
0V
7
3.4Reset and Watchdog Management
Watchdog
trigger edge
Reset and lead
time, no trigger
Watchdog cycle,
no trigger
Watchdog cycle, trigger
during t
2
window
Reset and lead time,
trigger during lead time
t
resshort
t
1
t
2
t
1
t
d
t
res
t
d
t
1
t
res
t
2
Watchdog trigger
in t
2
window
88% VCC
VCC
WD
/RESET
The watchdog timing is based on the trimmed internal watchdog oscillator. Its period time T
is determined by the external resistor RWD. A HIGH signal on WDD pin enables the watchdog
function; a LOW signal disables it. Since WDD pin is equipped with an internal pull-up resistor
the watchdog is enabled by default. In order to keep the current consumption as low as possible
the watchdog is switched off during Sleep Mode.
The timing diagram in Figure 3-4 shows the watchdog and external reset timing.
Figure 3-4.Timing Diagram of the Watchdog in Conjunction with the /RESET Signal
OSC
8
After power-up of the VCC regulator (VCC output exceeds 88% of its nominal value) /RESET
output stays LOW for the timeout period t
res
switches to HIGH. During the following time t
expected otherwise another external reset will be triggered.
When the watchdog has been correctly triggered for the first time, normal watch-dog operation
begins. A normal watchdog cycle consists of two time sections t
for the time t
edges on WD pin during t
at /RESET if no valid trigger has been applied at pin WD during t2. Rising
resshort
also cause a short pulse on /RESET. Start for such a cycle is always
1
the time of the last rising edge either on WD pin or on /RESET pin.
If the watchdog is disabled (WDD = LOW), only the initial reset for the time t
will be generated.
Additional resets will be generated if the VCC output voltage drops below 80% of its nominal
value.
The following example demonstrates how to calculate the timing scheme for valid watchdog trigger pulses, which the external microcontroller has to provide in order to prevent undesired
resets.
ATA6833/ATA6834 [Preliminary]
(typical 10 ms). Subsequently /RESET output
(typical 500 ms) a rising edge at the input WD is
d
and t2 followed by a short pulse
1
after power-up
res
9122B–AUTO–10/08
Example:
)
ATA6833/ATA6834 [Preliminary]
Using an external resistor R
T
= 12.32 µs
OSC
t
=980 × T
1
t
=780 × T
2
t
+ t2 = 21.68 ms ±10%
1
= 12.07 ms ±10%
OSC
= 9.609 ms ±10%
OSC
=33kΩ ±1% results in typical parameters as follows:
WD
Hence, the minimum time the external microcontroller has to wait before pin WD can be triggered is in worst case t
WD pin is t
t
max–tmin
=0.9× (t1+t2) = 19.51 ms. Thus watchdog trigger input must remain within
max
= 6.23 ms.
Other values can be set up by picking a different resistor value for R
=1.1× t1= 13.28 ms. The maximum time for the watchdog trigger on
min
. The dependency of T
WD
OSC
on the value of RWD is shown in Figure 3-5.
Figure 3-5.T
versus R
OSC
(µs)
OSC
T
WD
45
40
35
30
25
20
15
10
5
0
102030405060708090100
T
(µs)
OSCmax
RWD (kΩ)
T
OSCmin
(µs)
T
(µs
OSC
3.5Charge Pump
9122B–AUTO–10/08
A charge pump has been implemented in order to provide sufficient voltage to operate the external high-side power-NMOS transistors and the VG regulator, which drives the low-side
Power-NMOS transistors. The charge pump output voltage at CPOUT pin is controlled to settle
typically about 15V above the voltage at pin PBAT. A built-in supervisor circuit checks if the output voltage is sufficient to operate the VG regulator and external Power-NMOS transistors. The
output voltage is accepted as good when it rises above VCP
CPGOOD
. A charge pump failure is
flagged at DG2 if this minimum can not be reached or if the output voltage drops below the lower
threshold of VCP
CPGOOD
due to overloading.
The two shuffle capacitors should have the same value. The value of the reservoir capacitor
should be at least twice the value of one shuffle capacitor. Two external shuffle capacitors and
an external reservoir capacitor have to be provided. The typical values for the two shuffle capacitor is 100F, and for the reservoir capacitor is 470 nF. All capacitors should be ceramic. It is
advisable to pick a reservoir capacitor with twice or three-times the size of the two equally-sized
shuffle capacitors. The greater the capacitors, the greater the output current capability.
9
3.6VG Regulator
The VG regulator provides a stable voltage to supply the low-side gate drivers and to deliver sufficient voltage for the external low-side Power-NMOS transistors. Typically the output voltage is
12V. In order to guarantee reliable operation even with a low battery voltage, the VG regulator is
supplied by the charge pump output. For stability, an external ceramic capacitor of typically
470 nF has to be provided. There is no internal supervision of the VG output voltage.
3.7Output Drivers and Control Inputs IL1-IL3, IH1-IH3
This IC offers six push-pull output drivers for the external low-side and high-side power-NMOS
transistors. To guarantee reliable operation, the low-side drivers are supplied by the VG regulator while the high-side drivers are supplied directly by the charge pump. All drivers are designed
to operate at switching frequencies in the range of DC up to 50 kHz. The maximum gate charge
that can be delivered to each external Power-NMOS transistor at 50 kHz is 100 nC.
The output drivers are directly controlled by the digital input pins IL1 to IL3 and IH1 to IH3 (see
Table 3-1). All pins are equipped with an internal pull-down resistor. To operate the output driv-
ers properly the following requirements have to be fulfilled:
1. Device is in Active Mode.
2. In case of watchdog is enabled, at least one valid watchdog trigger has been accepted.
3. The voltage at pin PBAT lies within its operation range. Neither undervoltage nor overvoltage is present.
4. The charge pump output voltage has been accepted as good, thus it exceeded
VCP
CPGOOD
5. No overtemperature shutdown has occurred.
If a short circuit is detected by one of the sense inputs S1 to S3, the output drivers will be
switched off after a debounce time of 6 µs and the output DG1 will be flagged (see also Section
3.8 “Short Circuit Detection” on page 11). The output drivers will be enabled again and DG1 will
be cleared with a rising edge at one of the control inputs (IL1 to IL3, IH1 to IH3).
.
10
Additional logic prevents short circuits due to switching on one power-NMOS transistor while the
opposite one in the same branch is switched on already.
Table 3-1.Status of the Output Drivers Depending on the Control Inputs
Control
Inputs
Mode
SleepXXOFFSleep Mode
Active00OFF
Active10L[1..3] ON, H[1..3] OFF
Active01H[1..3] ON, L[1..3] OFF
Active11OFFShoot-through protection
IL[1..3]
Control
Inputs
IH[1..3]
Driver Stage for External
ATA6833/ATA6834 [Preliminary]
Power MOS
L[1..3], H[1..3]Comments
9122B–AUTO–10/08
3.8Short Circuit Detection
Short circuits in the motor bridge circuitry are sensed by S1 to S3 inputs. Internal comparators
monitor the voltage differences between the drain and the source terminals of the external
power-NMOS transistors. If one transistor switches on and the voltage drop from its drain to
source stays higher than the threshold V
a short circuit in this branch is detected. In this case, all output drivers are switched off immediately and DG1 pin will be set to HIGH. With a rising edge at any of the pins IL1 to IL3 or IH1 to
IH3, the diagnostic output DG1will be reset and the drivers can be switched on again.
3.9Cross Conduction Timer
In order to prevent damage of the motor bridge due to peak currents a non-overlapping phase
for switching the power-NMOS transistors is mandatory. Therefore, a cross conduction timer has
been implemented to prevent switching on any output driver for a time t
has been switched off. This also accounts for toggling any other driver after a short circuit was
detected. An external RC parallel combination defines the value for t
follows:
t
= KCC × RCC [kΩ] × CCC [nF], KCC is specified in Section 8. “Electrical Characteristics” on
CC
page 15.
ATA6833/ATA6834 [Preliminary]
(typical 4V) for a longer time than tSC (typically 6 µs),
SC
after any other driver
CC
and can be estimated as
CC
The RC combination is connected between CC and GND pins. When one of the drivers has
been switched off the RC combination is charged to 5V (VINT) and discharged with its time constant. Any low to high transition at the control inputs will be masked out at the driver outputs until
the voltage at CC pin drops below 67% of its initial value (VINT). The timer will be re-triggered at
any time by any falling edge at the control inputs. This is shown in the following figure.
Figure 3-6.Timing Scheme of the Cross Conduction Timer
IL1
L1
IH1
H1
IL3
L3
V
= V
CC
VINT
CC
V
= 67% V
CC
VINT
t
cc
t
cc
t
cc
9122B–AUTO–10/08
At least 5 kΩ minimum and 5 nF at maximum should be used as values for the RC combination.
10 kΩ is recommended. If the non-overlapping phase is controlled by the external microcon-
troller, it is possible to do without the external capacitor. The minimum time t
is defined by the
CC
parasitic capacitance at CC pin.
11
3.10Diagnostic Outputs D1 - D3
As mentioned in the sections above, the diagnostic outputs DG1 to DG3 are used to signal failures. This is summarized in the following table.
Table 3-2.Status of the Diagnostic Outputs (Normal Operation)
OT1: overtemperature warning
OV: overvoltage of PBAT
UV: undervoltage of PBAT
SC: short circuit
CPOK: charge pump OK
In order to differentiate between LIN and EN2 wake-up, DG1 output will be set to LOW or HIGH
respectively. LOW indicates wake-up by LIN, HIGH indicates wake-up by EN2. DG1 output will
be cleared by the first valid watchdog trigger after wake-up or by the first rising edge at one of
the control inputs (IL1 to IL3 and IH1 toIH3) if the watchdog is disabled.
3.11LIN Transceiver
Table 3-3.Indicating Wake-up Source
Diagnostic Outputs
Wake-up SourceDG1DG2DG3
1–– EN2
0––LIN
ATA6833 and ATA6834 include a fully integrated LIN transceiver complying with LIN specification 2.1 and SAEJ2602 2. The transceiver consists of a low-side driver with slew rate control,
wave shaping, current limiting, and a high voltage comparator followed by a debouncing unit in
the receiver.
During transmission, the data applied at pin TXD will be transferred to the bus driver to generate
a bus signal on LIN pin. TXD input has an internal pull-up resistor.
To minimize the electromagnetic emission of the bus line, the bus driver has a built-in slew rate
control and wave-shaping unit. The transmission will be aborted by a thermal shutdown or by a
transition to Sleep Mode.
12
ATA6833/ATA6834 [Preliminary]
9122B–AUTO–10/08
Figure 3-7.Definition of Bus Timing Parameters
ATA6833/ATA6834 [Preliminary]
(Input to transmitting node)
TXD
VS
(Transceiver supply
of transmitting node)
RXD
(Output of receiving node1)
TH
TH
TH
TH
Rec(max)
Dom(max)
Rec(min)
Dom(min)
t
rx_pdf(1)
t
Bit
t
Bus_dom(max)
LIN Bus Signal
t
Bus_dom(min)
t
Bit
t
Bus_rec(min)
t
Bit
Thresholds of
receiving node1
Thresholds of
receiving node2
t
Bus_rec(max)
t
rx_pdr(1)
(Output of receiving node2)
RXD
The recessive BUS level is generated from the integrated 30 kΩ pull-up resistor in series with an
active diode. This diode protects against reverse currents on the bus line in case of a voltage difference between the bus line and VSUP (V
necessary to use the IC as a LIN slave. If this IC is used as a LIN master, the LIN pin is terminated by an external 1 kΩ resistor in series with a diode to VBAT.
As PWM communication directly over the LIN transceiver in both directions is possible, there is
no TXD timeout feature implemented in the LIN transceiver.
t
rx_pdr(2)
BUS
> V
t
rx_pdf(2)
). No additional termination resistor is
SUP
9122B–AUTO–10/08
13
4.Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
All voltages are referenced to pin GND. [xxx] Values for the ATA6834.
Thermal resistance junction to heat slugR
Thermal resistance junction to ambient when heat slug
is soldered to PCB
14
ATA6833/ATA6834 [Preliminary]
thjc
R
thja
<5K/W
25K/W
9122B–AUTO–10/08
ATA6833/ATA6834 [Preliminary]
6.Operating Range
The operating conditions define the limits for functional operation and parametric characteristics of the device. Functionality outside these
limits is not implied unless otherwise stated explicitly. [xxx] Values for the ATA6834
ParametersSymbolMinMaxUnit
Operating supply voltage
Operating supply voltage
Operating supply voltage
(1)
(2)
(3)
(t = 500 ms)V
Ambient temperature rangeT
Junction temperature rangeT
V
V
VBAT
VBAT
VBAT
A
J
5.5 V
4.35.5V
(4)
V
THOV
–40+150°C
–40+150 (200)°C
Notes: 1. Full functionality
2. Output drivers are switched off, extended range for parameters for voltage regulators
3. Output drivers and charge pump are switched off
4. Voltages higher V
for maximum 500 ms
THOV
7.Noise and Surge Immunity
ParametersStandard and Test ConditionsValue
Conducted interferencesISO 7637-1Level 4
Conducted disturbancesCISP25Level 5
ESD (Human Body Model)ESD S 5.1±2 kV
ESD (Human Body Model)DIN EN61000-4-2, Pin LIN, VBAT, PBAT to GND±6 kV
Latch-up immunityJESD78, AEL-Q100 (004)Class II, level A
Note:1. Test pulse 5: V
bat max
= 40V
(4)
THOV
40V
(1)
V
8.Electrical Characteristics
All parameters given are valid for 5.5V ≤V
GND. [xxx] Values for the ATA6834.
Blocking capacitor at VCC1.5 µF10 µF
Serial inductance to C
)
PCB
Serial resistance to C
)
PCB
Resistor defining internal bias currents
for watchdog oscillator
Cross conduction time definition
resistor
Cross conduction time definition
capacitor
including
VCC
including
VCC
1nH20nH
2Ω15Ω
10 kΩ33 kΩ91 kΩ
5kΩ10 kΩ
330 pF5 nF
9122B–AUTO–10/08
23
10. Ordering Information
specifications
according to DIN
technical drawings
Issue: 1; 19.10.06
Drawing-No.: 6.543-5137.01-4
0.5 nom.
5.5
2413
3748
36
25
1
12
Z
4.5
±0.15
Bottom
7
48
1
12
Pin 1 identification
Top
Package: VQFN_7 x 7_48L
Exposed pad 4.5 x 4.5
Dimensions in mm
Not indicated tolerances ±0.05
0.2
0.9
±0.1
0.4±0.1
Z 10:1
0.23
±0.07
Extended Type NumberPackageRemarks
ATA6833-PLQWQFN48
ATA6834-PLQWQFN48
11. Package Information
12. Revision History
24
ATA6833/ATA6834 [Preliminary]
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document.
Revision No.History
9122B-AUTO-10/08
• Put datasheet in the latest template
• Section 8 “Electrical Characteristics” on pages 15 to 21 changed
9122B–AUTO–10/08
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