Rainbow Electronics ATA6664 User Manual

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Features

• Operating Range from 5V to 27V

• Baud Rate up to 20Kbaud

• Improved Slew Rate Control According to LIN Specification 2.0, 2.1 and SAEJ2602-2

• Fully Compatible with 3.3V and 5V Devices

• Atmel ATA6663: TXD Time-out Timer, Atmel ATA6664: No TXD Time-out Timer

• Normal and Sleep Mode

• Wake-up Capability via LIN Bus (90µs Dominant)

• External Wake-up via WAKE Pin (35µs Low Level)

• INH Output to Control an External Voltage Regulator or to Switch the Master Pull-up

• Very Low Standby Current During Sleep Mode (10µA)

• Wake-up Source Recognition

• Bus Pin Short-circuit Protected versus GND and Battery

• LIN Input Current < 2µA if V

• Overtemperature Protection

• High EMC Level

• Interference and Damage Protection According to ISO/CD 7637

• Fulfills the OEM “Hardware Requirements for LIN in Automotive Applications Rev.1.1”

• Packages: SO8, DFN8

Is Disconnected

BAT

1. Description

The Atmel ATA6663 is a fully integrated LIN transceiver complying with the LIN specification 2.0, 2.1 and SAEJ2602-2. The Atmel ATA6664 is an identical version, the only difference is that the TXD-dominant Time-out function is disabled so the device is able to send a static low signal to the LIN bus. It interfaces the LIN protocol handler and the physical layer. The device is designed to handle the low-speed data communication in vehicles, for example, in convenience electronics. Improved slope control at the LIN bus ensures secure data communication at up to 20Kbaud with an RC oscillator for protocol handling. Sleep Mode guarantees minimal current consumption even in the case of a floating bus line or a short circuit on the LIN bus to GND. The ATA6663/ATA6664 feature advanced EMI and ESD performance.

LIN Transceiver

Atmel ATA6663 Atmel ATA6664

9146E–AUTO–03/11

Figure 1-1. Block Diagram

RXD

Receiver

Filter

LIN

TXD

WAKE

2. Pin Configuration

Figure 2-1. Pinning SO8, DFN8

WAKE

RXD

TXD

time-out

timer

(only ATA6663)

Wake-up

timer

1 2

SO8

7 6 5

Wake-up bus timer

Slew rate control

Control unit

Sleep mode

2 8

INH VS LIN GND

RXD

WAKE

TXD

Short-circuit and overtemperature protection

INH

DFN8

3 x 3

INH VS LIN GND

GND

Table 2-1. Pin Description

Pin Symbol Function

1 RXD Receive data output (open drain) 2 EN Enables normal mode; when the input is open or low, the device is in sleep mode 3 WAKE High voltage input for local wake-up request. If not needed, connect directly to VS 4 TXD Transmit data input; active low output (strong pull-down) after a local wake-up request 5 GND Ground, heat sink 6 LIN LIN bus line input/output 7 VS Battery supply

8INH

Atmel ATA6663/ATA6664

Battery-related inhibit output for controlling an external voltage regulator or to switch-off the LIN master pull-up resistor; active high after a wake-up request

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3. Functional Description

3.1 Physical Layer Compatibility

Since the LIN physical layer is independent from higher LIN layers (e.g., the LIN protocol layer), all nodes with a LIN physical layer according to LIN2.x can be used along with LIN physical layer nodes, which are according to older versions (i.e., LIN1.0, LIN1.1, LIN1.2, LIN1.3), without any restrictions.

3.2 Supply Pin (VS)

Undervoltage detection is implemented to disable transmission if VS falls to a value below 5V in order to avoid false bus messages. After switching on V and INHIBIT is switched on. The supply current in sleep mode is typically 10µA.

3.3 Ground Pin (GND)

The Atmel ATA6663/ATA6664 does not affect the LIN Bus in the case of a GND disconnection. It is able to handle a ground shift up to 11.5% of V

3.4 Bus Pin (LIN)

A low-side driver with internal current limitation and thermal shutdown, and an internal pull-up resistor are implemented as specified by LIN2.x. The voltage range is from –27V to +40V. This pin exhibits no reverse current from the LIN bus to V disconnection. The LIN receiver thresholds are compatible to the LIN protocol specification.The fall time (from recessive to dominant) and the rise time (from dominant to recessive) are slope controlled. The output has a self-adapting short-circuit limitation: During current limitation, as the chip temperature increases, the current is reduced.

Atmel ATA6663/ATA6664

, the IC switches to fail-safe mode

, even in the case of a GND shift or V

Batt

Note: The internal pull-up resistor is only active in normal and fail-safe mode.

3.5 Input/Output Pin (TXD)

In Normal Mode the TXD pin is the microcontroller interface to control the state of the LIN output. TXD must be at Low- level in order to have a low LIN Bus. If TXD is high, the LIN output transistor is turned off and the Bus is in recessive state. The TXD pin is compatible to both a

3.3V or 5V supply. During fail-safe Mode, this pin is used as output and is signalling the wakeup source (see Section 3.14 “Wake-up Source Recognition” on page 8). It is current limited to <8mA.

3.6 TXD Dominant Time-out Function (only Atmel ATA6663)

The TXD input has an internal pull-down resistor. An internal timer prevents the bus line from being driven permanently in dominant state. If TXD is forced to low longer than t the pin LIN will be switched off (recessive mode). To reset this mode, TXD needs to be switched to high (> 10µs) before switching LIN to dominant again.

Note: The ATA6664 does not provide this functionality.

DOM

> 40ms,

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3.7 Output Pin (RXD)

This pin forwards information on the state of the LIN bus to the microcontroller. LIN high (recessive) is indicated by a high level at RXD, LIN low (dominant) is reported by a low voltage at RXD. The output is an open drain, therefore, it is compatible to a 3.3V or 5V power supply. The AC characteristics are defined by a pull-up resistor of 5kΩ to 5V and a load capacitor of 20pF. The output is short-current protected. In unpowered mode (V off. For ESD protection a Zener diode with V

3.8 Enable Input Pin (EN)

This pin controls the operation mode of the device. If EN = 1, the device is in normal mode, with the transmission path from TXD to LIN and from LIN to RXD both active. At a falling edge on EN, while TXD is already set to high, the device switches to sleep mode and transmission is not possible. In sleep mode, the LIN bus pin is connected to V source. The device can transmit only after being woken up (see Section 3.9, “Inhibit Output

Pin (INH)” ).

During sleep mode the device is still supplied from the battery voltage. The supply current is typically 10µA. The pin EN provides a pull-down resistor in order to force the transceiver into sleep mode in case the pin is disconnected.

3.9 Inhibit Output Pin (INH)

This pin is used to control an external voltage regulator or to switch on/off the LIN Master pull-up resistor in case the device is used in a Master node. The inhibit pin provides an internal switch towards pin V or fail-safe mode, the inhibit high-side switch is turned on. When the device is in sleep mode, the inhibit switch is turned off, thus disabling the voltage regulator or other connected external devices.

= 0V), RXD is switched

= 6.1V is integrated.

with a weak pull-up current

which is protected by temperature monitoring. If the device is in normal

A wake-up event on the LIN bus or at pin WAKE will switch the INH pin to the V system power-up (V

3.10 Wake-up Input Pin (WAKE)

This pin is a high-voltage input used to wake-up the device from sleep mode. It is usually connected to an external switch in the application to generate a local wake-up. A pull-up current source with typically –10µA is implemented. The voltage threshold for a wake-up signal is 3V below the VS voltage with an output current of typically –3µA.

If a local wake-up is not needed in the application, pin WAKE can directly be connected to pin VS.

3.11 Operation Modes

1. Normal Mode This is the normal transmitting and receiving mode. All features are available.

2. Sleep Mode In this mode the transmission path is disabled and the device is in low-power mode. Supply current from V pin WAKE will be detected and will switch the device to fail-safe mode. If EN then switches to high, normal mode is activated. Input debounce timers at pin WAKE (t

), LIN (t

WAKE

motive transients or EMI. In sleep mode the INH pin remains floating.

level. After a

rises from zero), the pin INH switches automatically to the VS level.

is typically 10µA. A wake-up signal from the LIN bus or via

Batt

) and EN (t

BUS

sleep,tnom

) prevent unwanted wake-up events due to auto-

Atmel ATA6663/ATA6664

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3. Fail-safe Mode

Figure 3-1. Modes of Operation

Atmel ATA6663/ATA6664

The internal termination between pin LIN and pin VS is disabled. Only a weak pull-up current (typical 10 µA) between pin LIN and pin V activated independently from the actual level on pin LIN or WAKE.

At system power-up or after a wake-up event, the device automatically switches to fail-safe mode. It switches the INH pin to a high state, to the V exceeds 5V. LIN communication is switched off. The microcontroller of the application will then confirm normal mode by setting the EN pin to high.

is present. Sleep mode can be

level when VS

EN = 1

& NOT b

Normal Mode

INH: high (INH HS switch ON)

Communication: ON

Table 3-1. Table of Operation Modes

Mode of Operation Transceiver INH RXD LIN

Power-up

Fail-safe Mode

Communication: OFF

RXD: see table of Modes

INH: high (INH HS switch ON) if VS > 5V

EN = 0

EN = 1

Go to sleep command

Local wake-up event

Fail-safe Off

On, except

VS < 5V

a: Power-up (VS > 3V)

< 5V

b: V

c: Bus wake-up event d: Wake-up from wake switch

c or d

INH: high impedance (INH HS switch OFF)

Sleep Mode

Communication: OFF

High, except after

wake-up

Recessive

Normal On On LIN depending TXD depending

Sleep Off Off High ohmic Recessive

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Wake-up events from sleep mode:

•LIN bus

•EN pin

• WAKE pin

• VS undervoltage

Figure 3-1 on page 5, Figure 3-2 on page 6 and Figure 3-5 on page 8 show the details of

wake-up operations.

3.12 Remote Wake-up via Dominant Bus State

A voltage lower than the LIN pre-wake detection V receiver and starts the wake-up detection timer.

at pin LIN activates the internal LIN

LINL

A falling edge at pin LIN, followed by a dominant bus level V time period (> t

) and a rising edge at pin LIN results in a remote wake-up request. The

BUS

device switches to fail-safe mode. Pin INH is activated (switches to V

maintained for a certain

BUSdom

) and the internal termi-

nation resistor is switched on. The remote wake-up request is indicated by a low level at pin RXD to interrupt the microcontroller (see Figure 3-2).

Figure 3-2. LIN Wake-up Waveform Diagram

Bus wake-up filtering time

LIN bus

INH

RXD

External

voltage

regulator

)

BUS

Low or floating

High or floating

Off state

Node in sleep state

High

Low

Regulator wake-up time delay

Normal

Mode

EN High

Microcontroller start-up

delay time

In sleep mode the device has a very low current consumption, even during short-circuits or floating conditions on the bus. A floating bus can arise if the Master pull-up resistor is missing, e.g., in case it is switched off when the LIN Master is in sleep mode or if the power supply of the Master node is switched off.

To minimize the current consumption I pre-wake threshold, the receiver is activated only for a specific time t the voltage at the bus is lower than pre-wake detection low (V

during voltage levels at the LIN-pin below the LIN

. If t

mon

) and higher than the LIN

LINL

elapses while

mon

dominant level, the receiver is switched off again and the circuit reverts to sleep mode. The current consumption is then the result of I

VSsleep

plus I

. If a dominant state is reached on

LINwake

the bus no wake-up will occur. Even if the voltage exceeds the pre-wake detection high (V

), the IC will remain in sleep mode (see Figure 3-3 on page 7).

LINH

This means the LIN bus must be above the Pre-wake detection threshold V

for a few

LINH

microseconds before a new LIN wake-up is possible.

Atmel ATA6663/ATA6664

9146E–AUTO–03/11

Atmel ATA6663/ATA6664

VSsleep

VSfail

+ I

LINwake

VSsleep

BUSdom

LINL

mon

LIN Pre-wake

LIN dominant state

LIN BUS

Mode of

operation

Int. Pull-up

Resistor

RLIN

Wake-up Detection Phase

off (disabled)

Sleep Mode Sleep Mode

Sleep Mode

VSsleep

VSfail

+ I

LINwake

VSsleep

BUSdom

LINL

LIN Pre-wake

LIN dominant state

LIN BUS

Mode of

operation

Int. Pull-up

Resistor

RLIN

off (disabled) on (enabled)

Wake-up Detection PhaseSleep Mode Fail-Safe Mode

mon

Figure 3-3. Floating LIN Bus During Sleep Mode

If the Atmel nant state (V

ATA6663/ATA6664 is in sleep mode and the voltage level at the LIN is in domi-

LIN

< V

) for a time period exceeding t

BUSdom

(during a short circuit at LIN, for

mon

example), the IC switches back to sleep mode. The VS current consumption then consists of I

VSsleep

plus I

LINWAKE

. After a positive edge at pin LIN the IC switches directly to fail-safe mode

(see Figure 3-4).

Figure 3-4. Short Circuit to GND on the LIN Bus During Sleep Mode

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3.13 Local Wake-up via Pin WAKE

Microcontroller start-up

delay time

Wake filtering time

WAKE

Off state

Node in sleep state

High or floating

TXD weak pull-down resistor

Low or floating

State change

TXD strong pull-down

Node in

operation

Weak

pull-down

EN High

HighLow

On state

High

Regulator wake-up time delay

Wake pin

INH

TXD

RXD

Voltage

regulator

A falling edge at pin WAKE, followed by a low level maintained for a certain time period (> t that no transient creates a wake-up. The device then switches to fail-safe mode. Pin INH is activated (switches to V wake-up request is indicated both by a low level at pin RXD to interrupt the microcontroller and by a strong pull-down at pin TXD (see Figure 3-5). The voltage threshold for a wake-up signal is 3V below the VS voltage with an output current of typically –3µA. Even in case of a continuous low at pin WAKE it is possible to switch the IC into sleep mode via a low level at pin EN. The IC will remain in sleep mode for an unlimited time. To generate a new wake-up at pin WAKE, a high signal > 6µs is required. A negative edge then starts the wake-up filtering time again.

Figure 3-5. Wake-up from Wake-up Switch

), results in a local wake-up request. According to ISO7637, the wake-up time ensures

WAKE

) and the internal termination resistor is switched on. The local

3.14 Wake-up Source Recognition

The device can distinguish between a local wake-up request (pin WAKE) and a remote wake-up request (LIN bus). The wake-up source can be read at pin TXD in fail-safe mode. If an external pull-up resistor (typically 5kΩ) has been added on pin TXD to the power supply of the microcontroller, a high level indicates a remote wake-up request (weak pull-down at pin TXD), a low level indicates a local wake-up request (strong pull-down at pin TXD).

The wake-up request flag (indicated at pin RXD) as well as the wake-up source flag (indicated at pin TXD) are reset immediately if the microcontroller sets pin EN to high (see Figure 3-2 on

page 6 and Figure 3-5 on page 8).

Atmel ATA6663/ATA6664

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3.15 Fail-safe Features

Atmel ATA6663/ATA6664

• During a short-circuit at LIN to V

to the power dissipation, the chip temperature exceeds T off. The chip cools down, and after a hysteresis of T

• During a short-circuit from LIN to GND the IC can be switched to sleep mode, and even in

this case the current consumption is lower than 45µA. When the short-circuit has elapsed, the IC starts with a remote wake-up.

•If the Atmel

ATA6663/ATA6664 is in sleep mode and a floating condition occurs on the bus, the IC switches back to sleep mode automatically. The current consumption is lower than 45µA in this case.

• The reverse current is < 2µA at pin LIN during loss of V systems where some slave nodes are supplied from battery or ignition.

• Pin EN provides a pull-down resistor to force the transceiver into sleep mode if EN is disconnected

• Pin RXD is set floating if V

BAT

• Pin TXD provides a pull-down resistor to provide a static low if TXD is disconnected

• After switching the IC into Normal Mode the TXD pin must be pulled to high longer than 10µs in order to activate the LIN driver. This feature prevents the bus from being driven into dominant state when the IC is switched into Normal Mode and TXD is low.

• The INH output transistor is protected by temperature monitoring

, the output limits the output current to IBUS_LIM. Due

BAT

, and the LIN output is switched

off

, it switches the output on again.

hys

. This is the best behavior for bus

BAT

is disconnected

9146E–AUTO–03/11

4. Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Parameters Symbol Min. Typ. Max. Unit

- Continuous supply voltage

Wake DC and transient voltage (with 2.7kΩ serial resistor)

- Transient voltage according to ISO7637 (coupling 1nF) Logic pins (RXD, TXD, EN) –0.3 +5.5 V LIN

- DC voltage

- Transient voltage according to ISO7637 (coupling 1nF) INH

- DC voltage –0.3 V ESD according to IBEE LIN EMC

Test specification 1.0 according to IEC 61000-4-2

- Pin VS, LIN to GND

- Pin WAKE (2.7kΩ serial resistor) ESD HBM according to STM5.1

with 1.5kΩ / 100pF

- Pin VS, LIN, WAKE, INH to GND HBM ESD

ANSI/ESD-STM5.1 JESD22-A114 AEC-Q100 (002)

CDM ESD STM 5.3.1 ±750 V Machine Model ESD AEC-Q100-Rev.F (003) ±200 V Junction temperature T Storage temperature T

stg

–0.3 +40 V

–3

–150

–27

–150

+40

+100

+40

+100

+ 0.3 V

±8 ±6

±6 KV

±3 KV

–40 +150 °C –55 +150 °C

V V

KV KV

5. Thermal Characteristics

Parameters Symbol Min. Typ. Max. Unit

Thermal resistance junction ambient R Special heat sink at GND (pin 5) on PCB (fused lead

frame to pin 5) Thermal shutdown T Thermal shutdown hysteresis T

Atmel ATA6663/ATA6664

thJA

off

hys

150 165 180 °C

5 1020°C

80 K/W

145 K/W

9146E–AUTO–03/11

Atmel ATA6663/ATA6664

6. Electrical Characteristics

5V < VS < 27V, Tj = –40°C to +150°C

No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*

1.1 DC voltage range nominal 7 V

1.2 Supply current in sleep mode

1.3

1.4

1.5 Supply current in fail-safe mode

1.6 V

1.7 V

1.8

2 RXD Output Pin (Open Drain)

2.1 Low-level output sink current

2.2 RXD saturation voltage 5-kΩ pull-up resistor to 5V 1 Vsat

2.3 High-level leakage current

2.4 ESD Zener diode I

3 TXD Input Pin

3.1 Low-level voltage input 4 V

3.2 High-level voltage input 4 V

3.3 Pull-down resistor V

3.4 Low-level leakage current V

3.5 Low-level output sink current

4EN Input Pin

4.1 Low-level voltage input 2 V

4.2 High-level voltage input 2 V

4.3 Pull-down resistor V

4.4 Low-level input current V

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

Sleep mode

> VS – 0.5V

LIN

VS < 14V Sleep mode,

bus shorted to GND

= 0V

LIN

VS < 14V

Supply current in normal mode

Bus recessive V

< 14V

Bus dominant V

< 14V

Total bus load > 500Ω Bus recessive

< 14V

undervoltage threshold on 7 V

undervoltage threshold off 7 V

undervoltage threshold

hysteresis

Normal mode V

LIN

= 0V, V

RXD

= 0.4V

Normal mode

= V

, V

LIN

BAT

= 100µA 1 VZ

RXD

= 5V 4 R

TXD

= 0V 4 I

TXD

RXD

= 5V

Fail-safe mode, local wake-up

= 0.4V

TXD

= V

LIN

BAT

= 5V 2 R

= 0V 2 I

VSsleep

VSsleep_sc

VSrec

VSdom

VSfail

Sth

Sth_hys

RXDL

RXD

RXDH

RXD

TXDL

TXDH

TXD

TXD_leak

TXD

ENL

ENH

5 13.5 27 V A

10 20 µA A

23 45 µA A

0.9 1.3 mA A

1.2 2 mA A

0.5 1.1 mA A

44.95VA

4.05 5 V A

50 500 mV A

1.3 2.5 8 mA A

0.4 V A

–3 +3 µA A

5.8 8.6 V A

–0.3 +0.8 V A

27VA

125 250 600 kΩ A

–3 +3 µA A

1.3 2.5 8 mA A

–0.3 +0.8 V A

27VA

125 250 600 kΩ A

–3 +3 µA A

9146E–AUTO–03/11

6. Electrical Characteristics (Continued)

5V < VS < 27V, Tj = –40°C to +150°C

No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*

5 INH Output Pin

5.1 High-level voltage

Switch-on resistance between

5.2 VS and INH

5.3 Leakage current

Normal or fail-safe mode I

= –15mA

INH

Normal or fail-safe mode 8 R

Sleep mode

= 0V/27V, VS = 27V

INH

INHH

INH

INHL

6 WAKE Pin

6.1 High-level input voltage 3 V

6.2 Low-level input voltage I

6.3 Wake pull-up current V

6.4 High-level leakage current V

= typically –3µA 3 V

WAKE

< 27V 3 I

= 27V, V

= 27V 3 I

WAKE

WAKEH

WAKEL

WAKE

7 LIN Bus Driver

7.1 Driver recessive output voltage R

Driver dominant voltage

7.2 V

BUSdom_DRV_LoSUP

Driver dominant voltage

7.3 V

BUSdom_DRV_HiSUP

Driver dominant voltage

7.4 V

BUSdom_DRV_LoSUP

Driver dominant voltage

7.5 V

BUSdom_DRV_HiSUP

7.6 Pull-up resistor to V

7.7 Voltage drop at the serial diodes

LIN current limitation

7.8 V

= V

BUS

BAT_max

Input leakage current at the

7.9

receiver, including pull-up resistor as specified

= 500Ω /1kΩ 6V

LOAD

= 7V, R

= 18V, R

= 7V, R

= 18V, R

= 500Ω 6V

load

= 500Ω 6V

load

= 1000Ω 6V

load

= 1000Ω 6V

load

_LoSUP_1k

_HiSUP_1k_

The serial diode is mandatory 6 R In pull-up path with R

= 10mA

SerDiode

slave

SerDiode

BUS_LIM

Input leakage current Driver off

= 0V, VS = 12V

BUS

BUS_PAS_dom

BUSrec

_LoSUP

_HiSUP

LIN

Driver off

≥ V

BAT BUS

< 18V

BAT

BUS_PAS_rec

7.10 Leakage current LIN recessive

8V < V 8V < V V

BUS

Leakage current at ground loss; control unit disconnected from

7.11

ground; loss of local ground must not affect communication in the

GND V

=12V

BAT

0V < V

Device

BUS

= V

< 18V

BUS_NO_Gnd

residual network

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

VS –

0.75

30 50 Ω A

–3 +3 µA A

VS –

–1V

VS +

0.3V –

3.3V

–30 –10 µA A

–5 +5 µA A

0.9 ×

1.2 V A

2VA

0.6 V A

0.8 V A

20 30 47 kΩ A

0.4 1.0 V D

40 120 200 mA A

–1 mA A

10 20 µA A

–10 +0.5 +10 µA A

Atmel ATA6663/ATA6664

9146E–AUTO–03/11

Atmel ATA6663/ATA6664

6. Electrical Characteristics (Continued)

5V < VS < 27V, Tj = –40°C to +150°C

No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*

Leakage current at loss of battery; node has to substain the

7.12

current that can flow under this condition; bus must remain operational under this condition

7.13 Capacitance on pin LIN to GND 6 C

8 LIN Bus Receiver

8.1 Center of receiver threshold

8.2 Receiver dominant state V

8.3 Receiver recessive state V

8.4 Receiver input hysteresis V

Pre-wake detection LIN

8.5 High-level input voltage

Pre-wake detection LIN

8.6 Low-level input voltage

8.7 LIN Pre-wake pull-up current

9 Internal Timers

Dominant time for wake-up via

9.1 LIN bus

Time of low pulse for wake-up

9.2 via pin WAKE

Time delay for mode change

9.3

from fail-safe mode to normal mode via pin EN

Time delay for mode change

9.4

from normal mode into sleep mode via pin EN

Atmel ATA6663:

9.5 TXD dominant time out time

Power-up delay between V

9.6 until INH switches to high

Monitoring time for wake-up via

9.7 LIN bus

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

disconnected

BAT

SUP_Device

0V < V

BUS_CNT

th_dom

HYS

= GND

< 18V

BUS

+ V

th_rec

)/2

= 5V 6 V

= V

th_rec

– V

th_dom

Switches the LIN receiver on 6 V

< 27V

= 0V

LIN

= 0V 6 t

LIN

= 0V 3 t

WAKE

VEN = 5V 2 t

= 0V 2 t

= 0V 4 t

TXD

=5V

= 5V 7, 8 t

BUS_NO_Bat

LIN

BUS_CNT

BUSdom

BUSrec

BUShys

LINH

LINL

LINWAKE

BUS

WAKE

norm

sleep

dom

mon

0.1 2 µA A

20 pF D

0.475 ×

–27

0.6 ×

0.028 ×

VS –

–27V

0.5 ×

0.1 ×

0.525

× V

0.4 ×

40 V A

0.175

× V

VS +

0.3V V

3.3V

–

–30 –10 µA A

30 90 150 µs A

73550µsA

2 7 15 µs A

71524µsA

40 60 85 ms A

200 µs A

61015msA

9146E–AUTO–03/11

6. Electrical Characteristics (Continued)

5V < VS < 27V, Tj = –40°C to +150°C

No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*

LIN Bus Driver AC Parameter with Different Bus Loads

Load 1 (small): 1nF, 1kΩ ; Load 2 (large): 10nF, 500Ω ; R

Load 3 (medium): 6.8nF, 660Ω characterized on samples; 10.1 and 10.2 specifies the timing parameters for proper operation at 20Kbit/s, 10.3 and 10.4 at 10.4Kbit/s.

TH TH

10.1 Duty cycle 1

VS = 7.0V to 18V t

Bit

D1 = t TH

10.2 Duty cycle 2

VS = 7.0V to 18V t

Bit

D2 = t TH

10.3 Duty cycle 3

VS = 7.0V to 18V t

Bit

D3 = t TH

10.4 Duty cycle 4

VS = 7.0V to 18V t

Bit

D4 = t

Receiver Electrical AC Parameters of the LIN Physical Layer

LIN receiver, RXD load conditions: C Propagation delay of receiver

11.1 (see Figure 6-1 on page 15)

Symmetry of receiver

11.2

propagation delay rising edge minus falling edge

rec_pd

VS = 7.0V to 18V

rx_sym

VS = 7.0V to 18V

Rec(max) Dom(max)

= 50µs

bus_rec(min)

Rec(min) Dom(min)

= 50µs

bus_rec(max)

Rec(max) Dom(max)

= 96µs

bus_rec(min)

Rec(min) Dom(min)

= 96µs

bus_rec(max)

= 20pF, R

RXD

= max(t

= t

= 0.744 × V

= 0.581 × V

/(2 × t

= 0.422 × V

= 0.284 × V

/(2 × t

= 0.778 × V

= 0.616 × V

/(2 × t

= 0.389 × V

= 0.251 × V

/(2 × t

pull-up

rx_pdr

– t

rx_pdr

rx_pdf

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

= 5kΩ

, t

rx_pdf

= 5kΩ; C

RXD

)

Bit

)

Bit

)

Bit

)

Bit

)

= 20pF;

RXD

6D10.396 A

6 D2 0.581 A

6D30.417 A

6 D4 0.590 A

rx_pd

rx_sym

–2 +2 µs A

6µsA

Atmel ATA6663/ATA6664

9146E–AUTO–03/11

Figure 6-1. Definition of Bus Timing Parameter

VS (Transceiver supply of transmitting node)

TXD (Input to transmitting node)

RXD (Output of receiving node 1)

LIN Bus Signal

Bit

Bus_dom(max)

Bus_dom(min)

Bus_rec(min)

Bus_rec(max)

RXD (Output of receiving node 2)

THRec(max)

THDom(max)

THDom(min)

THRec(min)

Thresholds of

receiving node 1

Thresholds of

receiving node 2

rx_pdf(1)

rx_pdr(1)

rx_pdr(2)

rx_pdf(2)

Bit

Atmel ATA6663/ATA6664

9146E–AUTO–03/11

Figure 6-2. Application Circuit

INH

RXD

12V

BAT

5 kΩ

100 nF

Atmel ATA6663/ATA6664

2.7 kΩ

10 kΩ

Short-circuit and overtemperature

protection

Control unit

Slew rate control

Wake-up bus timer

Filter

Master node

pull-up

Wake-up

timer

TXD

Time-out

timer

Sleep mode

Receiver

WAKE

TXD

Microcontroller

VDD

External

switch

GND

LIN

LIN sub bus

220 pF

22 µF

GND

(only ATA6663)

Atmel ATA6663/ATA6664

9146E–AUTO–03/11

Atmel ATA6663/ATA6664

Package: SO 8

Dimensions in mm

specifications

according to DIN

technical drawings

Issue: 1; 15.08.06

Drawing-No.: 6.541-5031.01-4

0.2

5±0.2

3.8±0.1

6±0.2

3.7±0.1

4.9±0.1

3.81

0.4

1.27

0.1

+0.15

1.4

7. Ordering Information

Extended Type Number Package Remarks

ATA6663-FAQW DFN8 LIN transceiver, Pb-free, 8k, taped and reeled ATA6663-TAQY SO8 LIN transceiver, Pb-free, 4k, taped and reeled ATA6664-TAQY SO8 LIN transceiver, Pb-free, 4k, taped and reeled

8. Package Information

Figure 8-1. SO8

9146E–AUTO–03/11

Figure 8-2. DFN8

TITLE

DRAWING NO.

REV.

Package Drawing Contact: packagedrawings@atmel.com

6.543-5165.02-4

COMMON DIMENSIONS

(Unit of Measure = mm)

MIN NOM NOTEMAXSymbol

Exposed pad 2.4x1.6

Package: VQFN_3x3_8L

03/03/10

Dimensions in mm

specifications

according to DIN

technical drawings

0.02 0.050.0A1

33.12.9E

0.28 0.350.25b

0.65 BSCe

0.4 0.450.35L

1.6 1.651.55E2

2.4 2.452.35D2

33.12.9D

0.2 0.250.15A3

0.9 10.8A

PIN 1 ID

Partially Plated Surface

Z 10:1

Top View

Side View

Bottom View

8 5

Atmel ATA6663/ATA6664

9146E–AUTO–03/11

9. Revision History

Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document.

Revision No. History

9146E-AUTO-03/11

9146D-AUTO-09/10

9146C-AUTO-07/10

9146B-AUTO-05/10

• Figure 1-1 “Block Diagram” on page 2 changed

• Section 3.15 “Fail-safe Features” on page 9 changed

• Section 7 “Ordering Information” on page 17 changed

• Section 8 “Package Information” on pages 17 to 18 changed

• Section 6 “Electrical Characteristics” numbers 9.4 and 9.5 on page 13

changed

• Features changed

• Headings 3.6 and 3.10: text changed

• Abs.Max.Ratings table: row “ESD HBM acc. to STM5.1” changed

Atmel ATA6663/ATA6664

9146E–AUTO–03/11

Atmel Corporation

2325 Orchard Parkway San Jose, CA 95131 USA

Tel: (+1)(408) 441-0311 Fax: (+1)(408) 487-2600

Atmel Asia Limited

Unit 01-5 & 16, 19/F BEA Tower, Millennium City 5 418 Kwun Tong Road Kwun Tong, Kowloon HONG KONG Tel: (+852) 2245-6100

Atmel Munich GmbH

Business Campus Parkring 4 D-85748 Garching b. Munich GERMANY

Tel: (+49) 89-31970-0 Fax: (+49) 89-3194621

Atmel Japan

9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 JAPAN

Tel: (+81) (3) 3523-3551 Fax: (+81) (3) 3523-7581

Fax: (+852) 2722-1369

Atmel

, logo and combinations thereof, and others are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. Other terms and

product names may be trademarks of others.

Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN THE ATMEL TERMS AND CONDITIONS OF SALES LOCATED ON THE ATMEL WEBSITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT. IN NO EVENT SHALL ATMEL BE LIABLE FOR ANY DIRECT, INDIRECT, CONSEQUENTIAL, PUNITIVE, SPECIAL OR INCIDENTAL DAMAGES (INCLUDING, WITHOUT LIMITATION, DAMAGES FOR LOSS AND PROFITS, BUSINESS INTERRUPTION, OR LOSS OF INFORMATION) ARISING OUT OF THE USE OR INABILITY TO USE THIS DOCUMENT, EVEN IF ATMEL HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Atmel makes no representations or warranties with respect to the accuracy or completeness of the contents of this document and reserves the right to make changes to specifications and products descriptions at any time without notice. Atmel does not make any commitment to update the information contained herein. Unless specifically provided otherwise, Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life.

Rainbow Electronics ATA6664 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

Features

1. Description

2. Pin Configuration

3. Functional Description

3.1 Physical Layer Compatibility

3.2 Supply Pin (VS)

3.3 Ground Pin (GND)

3.4 Bus Pin (LIN)

3.5 Input/Output Pin (TXD)

3.6 TXD Dominant Time-out Function (only Atmel ATA6663)

3.7 Output Pin (RXD)

3.8 Enable Input Pin (EN)

3.9 Inhibit Output Pin (INH)

3.10 Wake-up Input Pin (WAKE)

3.11 Operation Modes

3.12 Remote Wake-up via Dominant Bus State

3.13 Local Wake-up via Pin WAKE

3.14 Wake-up Source Recognition

3.15 Fail-safe Features

4. Absolute Maximum Ratings

5. Thermal Characteristics

6. Electrical Characteristics

7. Ordering Information

8. Package Information

9. Revision History