Rainbow Electronics AT93C46C User Manual

Features

• Low-Voltage and Standard-Voltage Operation

–2.7(V
–2.5(V

• 3-Wire Serial Interface

• Schmitt Trigger, Filtered Inputs for Noise Suppression

• 2MHzClockRate(5V)

• Self-Timed Write Cycle (10 ms max)

• High Reliability

– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years

• Automotive Grade and Extended Temperature Devices Available

• 8-lead PDIP and 8-lead JEDEC SOIC Packages

=2.7Vto5.5V)

CC

=2.5Vto5.5V)

CC

3-Wire
Serial EEPROM

Description

The AT93C46C provides 1024 bits of serial electrically-erasable programmable read
only memory (EEPROM) organized as 64 words of 16 bits each. The device is opti­mized for use in many industrial and commercial applications where low-power and
low-voltage operation are essential. The AT93C46C is available in space saving 8­lead PDIP and 8-lead JEDEC SOIC packages.

TheAT93C46CisenabledthroughtheChipSelectpin(CS),andaccessedviaa3­wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock
(SK). Upon receiving a READ instruction at DI, the address is decoded and the data is
clocked out serially on the data output pin DO. The WRITE cycle is completely self­timed and no separate ERASE cycle is required before WRITE. The WRITE cycle is
only enabled when the part is in the ERASE/WRITE ENABLE state. When CS is
brought “high” following the initiation of a WRITE cycle, the DO pin outputs the
READY/BUSY status of the part.

The AT93C46C is available in 2.7V to 5.5V and 2.5V to 5.5V versions.

Pin Configurations

Pin Name Function

CS Chip Select

SK Serial Data Clock

DI Serial Data Input

DO Serial Data Output

GND Ground

CS
SK

DI

DO

8-lead PDIP

1
2
3
4

8
7
6
5

VCC
DC
NC
GND

1K (64 x 16)

AT93C46C

VCC Power Supply

NC No Connect

DC Don’t Connect

CS
SK

DO

DI

8-lead SOIC

1
2
3
4

VCC

8

DC

7

NC

6

GND

5

Rev. 1122D–SEEPR–08/02

1

Absolute Maximum Ratings*

Operating Temperature .................................. -55°Cto+125°C

Storage Temperature ..................................... -65°Cto+150°C

Voltage on Any Pin

with Respect to Ground .....................................-1.0V to +7.0V

Maximum Operating Voltage .......................................... 6.25V

DC Output Current ........................................................ 5.0 mA

Block Diagram

*NOTICE: Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam­age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.

2

AT93C46C

1122D–SEEPR–08/02

AT93C46C

Pin Capacitance

(1)

Applicable over recommended operating range from TA=25°C, f = 1.0 MHz, VCC= +5.0V (unless otherwise noted).

Symbol Test Conditions Max Units Conditions

C

OUT

C

IN

Output Capacitance (DO) 5 pF V

OUT

=0V

Input Capacitance (CS, SK, DI) 5 pF VIN=0V

Note: 1. This parameter is characterized and is not 100% tested.

DC Characteristics

Applicable over recommended operating range from: TAI=-40°Cto+85°C, VCC= +2.5V to +5.5V,
T

=0°Cto+70°C, VCC= +2.5V to +5.5V (unless otherwise noted).

AC

Symbol Parameter Test Condition Min Typ Max Units

V

CC1

V

CC2

V

CC3

I

CC

I

SB1

I

SB2

I

SB3

I

IL

I

OL

(1)

V

IL1

(1)

V

IH1

V

OL1

V

OH1

V

OL2

V

OH2

Note: 1. V

Supply Voltage 2.5 5.5 V

Supply Voltage 2.7 5.5 V

Supply Voltage 4.5 5.5 V

READ at 1.0 MHz 0.5 2.0 mA

Supply Current VCC=5.0V

WRITE at 1.0 MHz 0.5 2.0 mA

Standby Current VCC= 2.5V CS = 0V 14.0 20.0 µA

Standby Current VCC= 2.7V CS = 0V 14.0 20.0 µA

Standby Current VCC= 5.0V CS = 0V 35.0 50.0 µA

Input Leakage VIN=0VtoV

Output Leakage VIN=0VtoV

Input Low Voltage
Input High Voltage

Output Low Voltage
Output High Voltage

Output Low Voltage
Output High Voltage

min and VIHmax are reference only and are not tested.

IL

2.5V ≤ V

4.5V ≤ V

2.5V ≤ V

CC

CC

CC

CC

CC

≤ 5.5V

≤ 5.5V

≤ 2.7V

I

=2.1mA 0.4 V

OL

I

=-0.4mA 2.4 V

OH

=0.15mA 0.2 V

I

OL

I

=-100µAV

OH

-0.6
x0.7

V

CC

-0.2 V

CC

0.1 1.0 µA

0.1 1.0 µA

V

x0.3

CC

+1

V

CC

V

1122D–SEEPR–08/02

3

AC Characteristics

Applicable over recommended operating range from TA=-40°Cto+85°C, VCC=+2.5Vto+5.5V,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).

Symbol Parameter Test Condition Min Typ Max Units

f

SK

t

SKH

t

SKL

t

CS

t

CSS

SK Clock Frequency 4.5V ≤ VCC ≤ 5.5V

2.7V ≤ V

2.5V ≤ V

CC

CC

≤ 5.5V
≤ 5.5V

SK High Time 4.5V ≤ VCC ≤ 5.5V

2.7V ≤ V

2.5V ≤ V

CC

CC

≤ 5.5V
≤ 5.5V

SK Low Time 4.5V ≤ VCC ≤ 5.5V

2.7V ≤ V

2.5V ≤ V

CC

CC

≤ 5.5V
≤ 5.5V

Minimum CS Low Time 4.5V ≤ VCC ≤ 5.5V

2.7V ≤ V

2.5V ≤ V

CC

CC

≤ 5.5V
≤ 5.5V

CS Setup Time

Relative to SK

t

DIS

DI Setup Time

Relative to SK

t

CSH

t

DIH

CS Hold Time Relative to SK 0 ns

DI Hold Time

Relative to SK

t

PD1

Output Delay to ‘1’

AC Test

t

PD0

Output Delay to ‘0’

AC Test

t

SV

CS to Status Valid

AC Test

t

DF

t

WP

Endurance

CS to DO in High Impedance

AC Test
CS = V

IL

Write Cycle Time 10 ms

5.0V, 25°C, Page Mode

(1)

Note: 1. This parameter is characterized and is not 100% tested.

4.5V ≤ VCC ≤ 5.5V

2.7V ≤ V

2.5V ≤ V

CC

CC

≤ 5.5V
≤ 5.5V

4.5V ≤ VCC ≤ 5.5V

2.7V ≤ V

2.5V ≤ V

CC

CC

≤ 5.5V
≤ 5.5V

4.5V ≤ VCC ≤ 5.5V

2.7V ≤ V

2.5V ≤ V

CC

CC

≤ 5.5V
≤ 5.5V

4.5V ≤ VCC ≤ 5.5V

2.7V ≤ V

2.5V ≤ V

CC

CC

≤ 5.5V
≤ 5.5V

4.5V ≤ VCC ≤ 5.5V

2.7V ≤ V

2.5V ≤ V

CC

CC

≤ 5.5V
≤ 5.5V

4.5V ≤ VCC ≤ 5.5V

2.7V ≤ V

2.5V ≤ V

CC

CC

≤ 5.5V
≤ 5.5V

4.5V ≤ VCC ≤ 5.5V

2.7V ≤ V

2.5V ≤ V

4.5V ≤ V

≤ 5.5V

CC

≤ 5.5V

CC

≤ 5.5V 3 ms

CC

0
0
0

250
250
500

250
250
500

250
250
500

50
50

100

100
100
200

100
100
200

1M

2
1

0.5

250
250
500

250
250
500

250
250
500

100
100
200

MHz

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

Write

Cycle

4

AT93C46C

1122D–SEEPR–08/02

Instruction Set for the AT93C46C

Address

AT93C46C

Instruction SB Op Code

READ 1 10 A

EWEN 1 00 11XXXX Write enable must precede all programming modes.

ERASE 1 11 A

WRITE 1 01 A

ERAL 1 00 10XXXX Erases all memory locations. Valid only at V

WRAL 1 00 01XXXX Writes all memory locations. Valid only at V

EWDS 1 00 00XXXX Disables all programming instructions.

Functional Description

5-A0

5-A0

5-A0

The AT93C46C is accessed via a simple and versatile three-wire serial communication
interface. Device operation is controlled by seven instructions issued by the host pro­cessor. A valid instruction starts with a rising edge of CS and consists of a Start Bit

Commentsx16

Reads data stored in memory, at specified address.

Erase memory location An-A0.

Writes memory location An-A0.

(logic “1”) followed by the appropriate Op Code and the desired memory Address
location.

READ (READ): The Read (READ) instruction contains the Address code for the mem­ory location to be read. After the instruction and address are decoded, data from the
selected memory location is available at the serial output pin DO. Output data changes
are synchronized with the rising edges of serial clock SK. It should be noted that a
dummy bit (logic “0”) precedes the 16-bit data output string.

ERASE/WRITE (EWEN): To assure data integrity, the part automatically goes into the
Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable
(EWEN) instruction must be executed first before any programming instructions can be
carried out. Please note that once in the Erase/Write Enable state, programming
remains enabled until an Erase/Write Disable (EWDS) instruction is executed or V
power is removed from the part.

= 4.5V to 5.5V.

CC

= 4.5V to 5.5V.

CC

CC

1122D–SEEPR–08/02

ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified
memory location to the logical “1” state. The self-timed erase cycle starts once the
ERASE instruction and address are decoded. The DO pin outputs the READY/BUSY
status of the part if CS is brought high after being kept low for a minimum of 250 ns (t

CS

A logic “1” at pin DO indicates that the selected memory location has been erased, and
the part is ready for another instruction.

WRITE (WRITE): The Write (WRITE) instruction contains the 16 bits of data to be writ­ten into the specified memory location. The self-timed programming cycle t

WP

starts
after the last bit of data is received at serial data input pin DI. The DO pin outputs the
READY/BUSY status of the part if CS is brought high after being kept low for a minimum
of 250 ns (t

). A logic “0” at DO indicates that programming is still in progress. A logic

CS

“1” indicates that the memory location at the specified address has been written with the
data pattern contained in the instruction and the part is ready for further instructions. A

Ready/Busy Status cannot be obtained if the CS is brought high after the end of
the self-timed programming cycle, t

WP

.

).

5