Q-Tech QT816 User Manual

DETAIL PRODUCT
SPECIFICATION CONTROL DRAWING
Revision Record
Revision DCO Description
Initial release 5/28/08 A Updated part numbers LV RS CA 1/9/09 B Edited part numbers LV RS CA 6/21/09 C Edited Environmental Conditions, added temperature range options. LV RS CA 12/2/10
Changed par. 3.1.1 split supply and load variation from frequency
D
E 2224
stability vs. temperature characteristics; changed phase noise note; split current for lower supply voltage. (ECO 10552)
Section 3.1.1 Electrical Characteristics: Parameter: Freq. stability vs. ±5 % Input Voltage Variation, Max; Value: WAS: ±1.2 for Vss= 5 and 3.3V ±0.3 for Vss= 5 and 3.3V IS: ±1.2 for Vss= 5 and 3.3V ±0.3 for Vss= 12
Eng. Approval
Initials and Date
LV BR CA 7/24/12
LV JL 10/2/13 CP 10/2/13 10/2/13
Initials and Date
Release
Date
UNLESS OTHERWISE SPECIFIED
Dimensions are in Inches
Decimal Fraction Angular
.xxx ± .005
.xx ± .02
.x ± .1
Tolerances
x° ± 2°
THEINFORMATIONCONTAINEDINTHISSPECIFICATIONCONTROLDRAWINGISTHESOLEPROPERTYOFQ TECHCORPORATION.ANYREPRODUCTIONORDISTRIBUTIONOFTHISPRO PRIETARY DOCUMENTINPARTOR ASAWHOLEWITHOUTTHEWRITTENPERMISSIONOFQTECHCORPORATIONISPROHIBITED.
INFORMATIONINCLUDEDHEREINISCONTROLLEDUNDER THE INTERNATIONALTRAFFICINARMS REGULATIONS(ITAR)BYTHEU.S.DEPARTMENTOFSTATE.TRANSFEROFTHISINFORM PERSONORFOREIGN ENTITYREQUIRESANEXPORTLICENSEISSUEDBYTHEU.S.STATEDEPARTMENTORAN ITAREXEMPTIONTOTHELICENSEREQUIREMENTPRIORTOTHEEXPORTORTRANSFER.
Initial Release
Prepared Date
Luis Vargas 5/28/08
Checked Date
Craig Albright 2/10/09
Engineering Approval Date
Ron Stephens 2/10/09
Quality Assurance Approval Date
Craig Albright 2/10/09
Released Date
Alfred Min 2/10/09
F1195-2RA
ATIONTOAFOREIGN
10150 West Jefferson Blvd.
Culver City, CA 90232-3510 USA
LOW PROFILE 24 PIN FLAT PACK HYBRID
CRYSTAL OSCILLATOR, TCXO, CLASS S,
STANDARD DESIGN FOR SINE WAVE
UP TO 350MHz
DRAWING NO. REVISION
QT814, QT815 and QT816
Sine-Wave 24 Flat Pack
SCALE SIZE CAGE CODE PAGE
NONE A 51774
E
1 of 10
1.0 SCOPE
This specification establishes the detail requirements for low profile hybrid, hermetically sealed, HCMOS output temperature compensated crystal oscillators (TCXO)
MIL-PRF-55310).
2.0 APPLICABLE DOCUMENTS
Type 3, Class 2 (Reference
The following documents of the latest issue form a part of this drawing to the extent specified herein.
2.1
Specifications and Standards
SPECIFICATIONS
MILITARY
MIL-S-19500 Semiconductor Devices, General Specification For
MIL-PRF-55310 Crystal Oscillators, General Specification For
MIL-PRF-38535 Integrated Circuits, (Microcircuits) Manufacturing, General Specification For
MIL-PRF-38534 Hybrid Microcircuits, General Specification For
STANDARDS
MILITARY
MIL-STD-202 Test Methods for Electronic and Electrical Component Parts
MIL-STD-883 Test Methods and Procedures for Microelectronics
MIL-STD-1686 Electrostatic Discharge Control Program for Protection of Electrical and
Electronics Parts, Assemblies and Equipment.
2.2 Conflicting Requirements
In the event of conflict between requirements of this specification and other requirements of the
applicable detail drawing, the precedence in which requirements shall govern, in descending order, is as follows:
a) Applicable Customer purchase order. b) Applicable detail drawing. c) This specification. d) Other specifications or standards referenced in 2.1 herein.
2.3 Customer Purchase Order Special Requirements
Additional special requirements shall be specified in the applicable Customer purchase order when
additional requirements or modifications specified herein are needed for compliance to special program
or product line requirements.
3.0 PERFORMANCE REQUIREMENTS
3.1 General Definition
The TCXO is a high reliability signal generator that provides a sine-wave output. The TCXO has been
designed to operate in a spaceflight environment with an expected lifetime in excess of 15 years. Lifetime is defined as the sum of operational and storage environments.
Q-TECH Corporation
10150 W. Jefferson Blvd. Culver City, CA 90232
SIZE
A
CAGE NO.
51774
QT814, QT815 and QT816
Sine-Wave 24 Flat Pack
Page 2 of 10
REV.
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3.1.1 Electrical Characteristics
PARAMETER SYMBOL CONDITIONS VALUE UNIT
Frequency Nom.
Supply voltage, Nom.
Input Current, max.
Freq. stability vs. Operating Temperature
f/fc (Ta)
fo
Vs
Is
-
Vs±5%
Vs, nom. / Ta=+25C
Contact factory for other options available
See part number generation table
See part number generation table
30 for Vs=
12 and 15V
See part number generation table
55 for Vs= 5
and 3.3V
MHz
V
mA
ppm
Electrical Frequency Adjustment Min. (when specified)
Freq. stability vs. ±5 % Input Voltage Variation, Max
Freq. stability vs. ±5 % Load Variation, Max
Aging Max
Freq. stability vs. Vacuum Short term stability RF Output
Output level Min.
Harmonics Max. -20 -20 dBc Sub-harmonics Max. N/A -20 dBc Phase noise @ freq. offset
(Output Frequency up
to 75 MHz)
See notes: A,B,C and D
below
Spurious
A:
For Frequencies between 75.1 MHz and 150 MHz phase noise degrades between 6 dbc/Hz to 10 dbc/Hz
B:
For Frequencies between 150.1 MHz and 210 MHz phase noise degrades between 10 dbc/Hz to 12
f/fo
(Vcc)
f/fc (Vs) ±5 % Vs,, Ta=+25C
f/fc
(Load)
f/fo
f/fo
f/fc(t) t=1sec. (Allan Deviation) 0.001
£ (f) £ (f) £ (f) £ (f) £ (f)
±5 PPM Two options:
1) via an external select-at-
test resistor connected from Pin 1 to Ground
2) Via External tuning voltage ±1.2 for
Vss= 5 and
3.3V
Vs, nom. / Ta=+25C ±0.3
over 10 year (first year 1 ppm)
Met by design, not tested
Contact factory for other options available
Sine Class S, 100 krads (Si) total dose Min
f=10Hz f=100Hz f=1kHz f=10kHz f=100kHz
Under static conditions. Met by design, not tested.
30 to 75
3rd
-70 -70 dBc
±5.0
See part number generation table
±0.3 for Vss= 12
±5.0
0.2
75.1 to 350
rd
X
3
See part number generation table
-80
-110
-135
-155
-155
ppm
ppm
ppm
ppm ppm MHz
dBm
dBc/H
z
dBc/H
z
dBc/H
z
dBc/H
z
dBc/H
z
dbc/Hz
C:
For Frequencies between 210.5 MHz and 225 MHz phase noise degrades 13 dbc/Hz
D:
For Frequencies between 225.5 MHz and 300 MHz phase noise degrades 15 dbc/Hz
3.2 Absolute Maximum Rating
Supply Voltage 0 to +16.5 VDC DC Input Current 55 mA maximum
Q-TECH Corporation
10150 W. Jefferson Blvd. Culver City, CA 90232
SIZE
A
CAGE NO.
51774
Note 1 Note 1
QT814, QT815 and QT816
Sine-Wave 24 Flat Pack
Page 3 of 10
REV.
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Storage Temperature range -62°C to +125°C Lead Temperature (Soldering, 10 seconds) 300°C
Notes: 1 – without irreversible damages
3.2.1 Physical Characteristics
Note 1 Note 1
3.2.1.1 Dimensions
- The TCXO outline dimensions and terminal connections shall be as shown in Figure 1
herein.
3.2.1.2 Weight
3.2.1.3 Materials
3.3 Design and Construction
- The TCXO shall weigh less than or equal to 25 grams.
- The TCXO package body and lead finish shall be gold in accordance with MIL-PRF-38534.
The design and construction of the crystal oscillator shall be as specified herein. As a minimum, the oscillators shall meet the design and construction requirements of MIL-PRF-55310, except element evaluation shall be as specified in 3.3.1.
SCREENING FLOW CHART
(Screening is performed on a 100% basis)
Operation
Non-Destruct Wire Bond Pull 100%, MIL-STD-883, Method 2023 (2.4 grams) Internal Visual MIL-STD-883, methods 2017 & 2032 condition K (class S). During the time
interval between final internal visual inspection and preparation for sealing, hybrid crystal oscillators shall be stored in a dry, controlled environment as
defined in MIL-STD-883, method 2017 or in a vacuum bake oven. Stabilization Bake 48 hrs minimum @ +150°C MIL-STD-883, Method 1008 TC B Thermal Shock MI-STD 883, Method 1011, TC A Temperature Cycling MI-STD 883, Method 1010, TC B Constant Acceleration MIL-STD-883, Method 2001, TC A (5000 gs, Y1 Axis only) PIND MIL-STD-883, Method 2020, TC B Electrical Test Frequency, Output levels, Input Current@ +25°C Burn-In (Powered with load) +125°C for 240 hours Seal Test (fine & gross) 100% Method 1014, (TC A1 for fine leak and TC C for gross leak) Electrical Test
Radiographic MIL-STD-883, Method 2012 class S External visual MIL-STD-883 Method 2009
Frequency, Output levels, Input Current
@ +25°C & Temp Extremes listed on the Electrical Specification
Q-TECH Corporation
10150 W. Jefferson Blvd. Culver City, CA 90232
SIZE
A
CAGE NO.
51774
QT814, QT815 and QT816
Sine-Wave 24 Flat Pack
Page 4 of 10
REV.
E
PARAMETER SYMB
OL
Input Current, max. Is
Group A Inspection
(Testing is performed on a 100% basis)
CONDITIONS VALUE UNIT
Vs, nom. / Ta=+25C
30 for Vss= 12 and 15V
55 for
Vss= 5
and 3.3V
mA
Freq. stability vs. Operating Temperature
Electrical Frequency Adjustment Min. (when specified)
Output level Min.
Harmonics/Harmonicas, Max.
Phase noise @ freq. offset
(Output Frequency up to
75 MHz)
See note A below
External Visual
A:
For Frequencies between 75.1 MHz and 150 MHz phase noise degrades between 6 dbc/Hz to 10 dbc/Hz
B:
For Frequencies between 150.1 MHz and 210 MHz phase noise degrades between 10 dbc/Hz to 12
f/fc
(Ta)
f/fo
(Vcc)
£ (f) £ (f) £ (f) £ (f) £ (f)
Vs, nominal and over the operating temperature range indicated under part number definition
± Vs, nom. / Ta=+25C as indicated under part number definition
Sine Class S, 100 krads (Si) total dose Min
± Vs, nom. / Ta=+25C -30 dBc
± Vs, nom. / Ta=+25C
f=10Hz f=100Hz f=1kHz f=10kHz f=100kHz
MIL-STD-883, Method 2009
indicated under
part number
definition
indicated under
part number
definition
indicated under
part number
definition
-80
-110
-135
-155
-155
ppm
ppm
dBm
dBc/Hz dBc/Hz dBc/Hz dBc/Hz dBc/Hz
dbc/Hz
C:
For Frequencies between 210.5 MHz and 225 MHz phase noise degrades 13 dbc/Hz
D:
For Frequencies between 225.5 MHz and 300 MHz phase noise degrades 15 dbc/Hz
Group B Inspection
Testing shall be performed after completion of Frequency Aging and before parts are
shipped
SUB-
GROUP
1 Frequency Aging
TEST DESCRIPTION CONDITION QTY
MIL-PRF-55310
Para 3.6.34.2
100%
2
3 Electrical 1/ (Go/NoGo) 100%
Hermetic Seal 1/
Q-TECH Corporation
10150 W. Jefferson Blvd. Culver City, CA 90232
Fine Leak – MIL-STD-883 Method 1014 Condition A1 Gross Leak – MIL-STD-883, Method 1014 Condition C
SIZE
A
CAGE NO.
51774
QT814, QT815 and QT816
Sine-Wave 24 Flat Pack
Page 5 of 10
100%
REV.
E
NOTE: Samples from Subgroup 1 may be divided and used for Subgroups 3 and 4 Inspections.
SUB-
GROUP
Group C Electrical Inspections are performed on a 100% basis
TEST
DESCRIPTION
Group C Inspection1
CONDITION QTY
1
3
Vibration
(random)
Shock
Electrical Test
Hermetic Seal
Electrical Test
Temperature
Cycling
Electrical Test
Ambient Pressure
(Non-Operating
Electrical Test
Storage
Temperature
Hermetic Seal
Electrical Test Frequency, Output levels, Input Current @ +25°C & Temp
Resistance to
Soldering Heat
Hermetic Seal
Moisture
Resistance
Terminal
Strength (Lead
Integrity)
MI-STD 202 Method 214/ T.C. I-K (46Grms) for 3 minutes in each plane.
MI-STD 202 Method 213 T.C. F (1500g, 0.5ms half-sine pulse) 3 blows each direction of three axes (18 shocks total)
Frequency, Output levels, Input Current @ +25°C & Temp Extremes listed on the Electrical Specification.
Fine Leak – MIL-STD-883 Method 1014 Condition A1 Gross Leak – MIL-STD-883, Method 1014 Condition C
Frequency, Output levels, Input Current @ +25°C & Temp Extremes listed on the Electrical Specification.
MI-STD 883, Method 1010, TC B 100 cycles.
Frequency, Output levels, Input Current @ +25°C & Temp Extremes listed on the Electrical Specification
2 MI-STD 202 Method 105 T.C. C
Frequency, Output levels, Input Current @ +25°C & Temp Extremes listed on the Electrical Specification
Low Temp.of - 55 (+0, -5) °C HighTemp.of +150 (+5,-0) °C
Fine Leak – MIL-STD-883 Method 1014 Condition A1 Gross Leak – MIL-STD-883, Method 1014 Condition C
Extremes listed on the Electrical Specification
MI-STD 202 Method 210 T.C. B
Fine Leak – MIL-STD-883,Method 1014 Condition A1 Gross Leak – MIL-STD-883, Method 1014 Condition C
MI-STD 202 Method 106
MI-STD 202 Method 211 T.C. B
4 parts
(0 failures)
1 parts
(0 failures)
4
Visual Inspection
Hermetic Seal
Resistance To
Solvents
Q-TECH Corporation
10150 W. Jefferson Blvd. Culver City, CA 90232
Fine Leak – MIL-STD-883,Method 1014 Condition A1 Gross Leak – MIL-STD-883, Method 1014 Condition C
MI-STD 202 Method 215
SIZE
A
CAGE NO.
51774
QT814, QT815 and QT816
Sine-Wave 24 Flat Pack
Page 6 of 10
1 parts
(0 failures)
REV.
E
3.3.1 All piece parts shall be derived from lots that meet the element evaluation requirements of MIL-PRF­38534, Class K, with the following exceptions:
Active elements
a) Visual inspection of silicon on sapphire microcircuits.
Semicircular crack(s) or multiple adjacent cracks, not in the active area, starting and terminating at the edge of the die are acceptable. Attached (chip in place) sapphire is nonconductive material and shall not be considered as foreign material and will be considered as nonconductive material for all inspection criteria.
b) Subgroup 4, Scanning Electron Microscope (SEM) inspection.
The manufacturer may allow the die distributor, at his option, to select two (2) dice from a waffle pack (containing a maximum quantity of 100 die), visually inspect for the worst case metallization of the 2 dice, and take SEM photographs of the worst case.
c) Subgroup
purchase order.
5 radiation tests. Subgroup 5 radiation tests are not required unless otherwise specified in the detail
3.3.2 Processes - Processes used for manufacturing the TCXO are selected on the basis of their ability to meet the quality requirements for space High Reliability manufacturing. Travelers or Process Cards are used in the manufacturing and testing of all of the TCXO Series, and might be available for customer review. Copies of these Travelers can be provided with the TCXOs at time of shipment if so specified on the purchase order
.
3.3.3 Interchangeability - Each TCXO shall be interchangeable without using a special selection process.
3.3.4 Product Marking - Each unit shall be permanently marked with the manufacturer's name or symbol, part number, lot date code number, and serial number. The unit shall be marked with the outline of an equilateral triangle near pin 1 to show that it contains devices which are sensitive to electrostatic discharge.
3.4 Parts Program
Devices delivered to this specification represent the standardized Parts, Materials and Processes (PMP) Program developed, implemented and certified for advanced applications and extended environments.
3.4.1 Quartz Crystal Resonator
- The crystal resonator used shall be constructed using a 4-point mount
premium synthetic swept Quartz and procured to Q-TECH SCD. (For the Engineering models, non-
swept quartz may be used).
3.4.2 Active devices
– Radiation testing is not performed at the oscillator level, but these TCXOs have been acceptable for use in environments up to 100K rads by analysis of the components used. ONLY Bipolar semiconductors are employed in the design. This device is specified to be radiation tolerant to:
100 kRad(Si) total ionizing dose(TID)
3.4.3 Prohibited Materials
: Materials containing more than 97% tin and materials containing measurable amounts (by common nondestructive test methods) of selenium, cadmium, or mercury shall not be used as plating, coating or base materials in the construction of parts or components. Zinc is only acceptable as an alloying element and alloys containing zinc must be covered by suitable protective plating (e.g. nickel plating). Inert oxides of the above materials are allowed.
3.5 Traceability Requirements
Material, element and process traceability requirements shall be as specified by MIL-PRF-38534 for Class K hybrids.
Q-TECH Corporation
10150 W. Jefferson Blvd. Culver City, CA 90232
SIZE
A
CAGE NO.
51774
QT814, QT815 and QT816
Sine-Wave 24 Flat Pack
Page 7 of 10
REV.
E
3.6 Data
3.6.1. Design Documentation
- When required by the purchase order, design, topography, process and flow charts for all assembly/inspection and test operation for devices to be supplied under this specification on the initial procurement shall be established and shall be available in-plant for review by the procuring activity upon request. This design documentation shall be sufficient to depict the physical and electrical construction of the devices supplied under the specification and shall be traceable to the specific parts, drawings or part type numbers to which it applies, and to the production lot(s) and inspection lot codes under which devices are manufactured and tested so that revisions can be identified.
3.6.2. Technical Data Package
- When required by the purchase order, the following design documentation and information is deliverable 30 days prior to the start of production. The Technical Data Package shall consist of the following:
a) Assembly drawing(s).
b) All electrical schematics and drawings
not considered proprietary
.
c) The assembly and screening travelers to be used on-line to manufacture the devices supplied to
this specification.
d) Parts and materials list.
e) Element evaluation data confirming compliance with MIL-PRF-38534, Class K, and
Prohibited Materials paragraph 3.4.
3
3.7 Test Report
A test report is supplied with each shipment of oscillators and includes the following information, as a
minimum: a) A Certificate of Conformance to all specifications and purchase order requirements. As a minimum,
the Certificate of Conformance shall include the following information:
Purchase order number.
Applicable part number.
Manufacturers lot number.
Lot date code.
b) Parts and materials traceability information. c) Certificate of crystal sweeping. d) Manufacturing lot traveler. e) Screening attributes and variables data as applicable. f) Quality conformance inspection attributes and variables data as applicable. g) Radiographic inspection negatives.
3.8 Engineering Models
Engineering Models are fit, form, and function representative of Flight Models and of commercial construction using commercial parts of same generic type as Flight Models. Completed oscillators are not screened.
Q-TECH Corporation
10150 W. Jefferson Blvd. Culver City, CA 90232
SIZE
A
CAGE NO.
51774
QT814, QT815 and QT816
Sine-Wave 24 Flat Pack
Page 8 of 10
REV.
E
NOTES: This oscillator is offered to meet the specifications above and is not guaranteed to meet any other
requirements.
PART NUMBER GENERATION
SERIES
QT81: 24 Pin
Flat Pack
Output type and supply
voltage
4: SINE WAVE 0dBm …..5V N: 0…+50………
5: SINE WAVE +7dBm ….12V P: 0…+70………… 6: SINE WAVE 7dBm …..15V Q: 0…+70………
R: 0…+70………
U: -20…+70……
V: -20…+70……
W:-20…+70……
X: -40…+85……
Y: -40…+85……
Z: -40…+85……
A: 0…..+50……
G: 0….+70…… H:-30…+70…… K:-30…+70…… (See note 1 below)
TEMPERATURE
RANGE (C)
1. Variations from standard specification are available, please contact factory.
EXAMPLE: QT815URM-100.000000 would be a Flight Model
version HF TCXO, 24 pin SMD flat pack, sine-wave 12 volts, stability ±1
ppm over -20…+70°C, @ 100 MHz with external tuning via external resistor.
QT815URE-100.000000
stability ±1 ppm over -20…+70°C, @ 100 MHz with external tuning via external resistor.
Q-TECH Corporation
10150 W. Jefferson Blvd. Culver City, CA 90232
would be a Engineering Model version HF TCXO, 24 pin SMD flat pack, sine-wave 12 volts,
SIZE
A
Stability
Over
Temperature
1 ppm
1 ppm
2 ppm
5 ppm
1 ppm
2 ppm
5 ppm
4 ppm
5 ppm 10 ppm
0.5ppm
0.5ppm
2 ppm
4 ppm
CAGE NO.
51774
External Tuning Level
X: No tuning
R: External resistor M: Flight Model
V: External voltage
E: Eng. Model 10……..350
QT814, QT815 and QT816
Sine-Wave 24 Flat Pack
Page 9 of 10
FREQUENCY
(MHz)
REV.
E
FIGURE 1 INTERFACE CONTROL DRAWING
24 pin Flat-Pack
ESD SYMBOL FOR PIN NO. 1
Q-TECH PART NUMBER FREQUENCY
D/C
S/N
USA
24X .072 ± .007
22X .100 TYP.
NON-ACCUMULATIVE
.975 MAX.
12
.210 MAX.
24X .010 ± .002
2X .500 MIN.
13
1.275 MAX.
1
24X .015 ±.003
PIN NO. DESIGNATION
1
2 - 11 NC
12 Ground/Case 13 RF Output
14 - 23 NC
24 Supply Voltage
External Frequency Adjustment
(when specified)
2X 1.100
24
2X .085 REF.
NOTES:
Dimensions are in inches. Lead numbers are for reference only and
are not marked on the unit.
A triangle symbol is marked on the corner of
the package to indicate Pin 1
All pins with NC function may not be
connected as external tie or connections (Pins may be connected internally).
Q-TECH Corporation
10150 W. Jefferson Blvd. Culver City, CA 90232
SIZE
A
CAGE NO.
51774
QT814, QT815 and QT816
Sine-Wave 24 Flat Pack
Page 10 of 10
REV.
E
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