POWEREX CM200E3U-12H Datasheet

CM200E3U-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

K KM

D

Q -

(2 PLACES)

U T

J

E2 G2

#110
TAB

E

H

F

R

S

L

N

B

G

C

P - NUTS

(3 PLACES)

.47 [12mm] DEEP

CM

C2E1 E2 C1

T

Chopper IGBTMOD™
U-Series Module

200 Amperes/ 600 Volts

Description:

Powerex Chopper IGBTMOD™
Modules are designed for use in
switching applications. Each module
consists of one IGBT Transistor
having a reverse-connected super­fast recovery free-wheel diode and
an anode-collector connected super­fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking base­plate, offering simplified system
assembly and thermal management.

C2E1

E2

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0
B 1.89 48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.16 4.0
G 0.51 13.0
H 0.02 0.5

J 0.53 13.5

K 0.91 23.0

G2
E2

C1

Dimensions Inches Millimeters

L 0.84 21.2
M 0.67 17.0
N 0.28 7.0

PM5 M5
Q0.26 Dia. 6.5 Dia.
R 0.02 4.0

S 0.30 7.5

T 0.63 16.0
U 0.98 25.0

Features:

□ Low Drive Power
□ Low V

CE(sat)

□ Discrete Super-Fast Recovery

Free-Wheel Diode

□ High Frequency Operation

(15-20kHz)

□ Isolated Baseplate for Easy

Heat Sinking

Applications:

□ DC Motor Control
□ Boost Regulator

Ordering Information:

Example: Select the complete
module number you desire from the
table - i.e. CM200E3U-12H is a
600V (V

), 200 Ampere Chopper

CES

IGBTMOD™ Pow er Module.

Current Rating V

Type Amperes Volts (x 50)

CM 200 12

CES

119

119

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200E3U-12H
Chopper IGBTMOD™ U-Series Module

200 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200E3U-12H Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg

CES

GES

C

CM

E

EM

c

Mounting Torque, M5 Main Ter minal – 31 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
600 Volts
±20 Volts

200 Amperes

400* Amperes

200 Amperes

400* Amperes

650 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 20mA, VCE = 10V 4.5 6 7.5 Volts

IC = 200A, VGE = 15V, Tj = 25°C – 2.4 3.0 V olts

IC = 200A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
Emitter-Collector Voltage V

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

G
EC
FM

VCC = 300V, IC = 200A, VGE = 15V – 400 – nC

IE = 200A, VGE = 0V – – 2.6 Volts

IF = 200A, Clamp Diode Part – – 2.6 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies
oes
res

d(on)

r

d(off)

f

rr

rr

rr

rr

VCE = 10V, VGE = 0V – – 9.6 nf

VCC = 300V, IC = 200A, – – 150 ns

V

= V

GE1

GE2

RG = 3.1V, Resistive – – 300 ns

Load Switching Operation – – 300 ns
IE = 200A, diE/dt = -400A/µs – – 160 ns
IE = 200A, diE/dt = -400A/µs – 0.48 – µC

IF = 200A, Clamp Diode Part – – 160 ns

diF/dt = -400A/µs – 0.48 – µC

= 15V, – – 400 ns

– – 17.6 nf

– – 2.6 nf

120

120