POWEREX CM200DU-34KA Datasheet
CM200DU-34KA
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
TC Measured
Point
E
B
R
CM
S - NUTS
(3 TYP)
C
C2E1
Outline Drawing and Circuit Diagram
C2E1
E2
D
C
LABEL
T - (4 TYP.)
H
G2
E2
L
E2
C1
2525
QQ
P
N
KKK
G2
E2
C1
E1
G1
J
E1
G1
X
H
V - THICK x W - WIDE
TAB (4 PLACES)
M
F
F
G
Dual IGBTMOD™
KA-Series Module
200 Amperes/ 1700 Volts
Description:
Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system
assembly and thermal
management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode
Heat Sinking
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.83 21.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0
Dimensions Inches Millimeters
M 0.33 8.5
N 0.10 2.5
P 0.85 21.6
Q 0.98 25.0
R 0.86 21.75
SM6 M6
T 0.26 Dia. 6.5 Dia.
V 0.02 0.5
W 0.110 2.79
X 1.08 27.35
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200DU-34KA is
a 1700V (V
), 200 Ampere
CES
Dual IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 200 34
CES
1
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DU-34KA
Dual IGBTMOD™ KA-Series Module
200 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200DU-34KA Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M6 Main Ter minal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
1700 Volts
±20 Volts
200 Amperes
400* Amperes
200 Amperes
400* Amperes
1100 Watts
3500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 20mA, VCE = 10V 4.0 5.5 7.0 Volts
IC = 200A, VGE = 15V, Tj = 25°C– 3.2 4.0 Volts
IC = 200A, VGE = 15V, Tj = 125°C– 3.8 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
G
EC
VCC = 1000V, IC = 200A, VGE = 15V – 900 – nC
IE = 200A, VGE = 0V, Tj = 25°C– –4.6 Volts
IE = 200A, VGE = 0V, Tj = 125°C– 2.2 – Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V – – 4.8 nf
VCC = 1000V, IC = 200A, – – 600 ns
V
= V
GE1
GE2
RG = 1.6⍀,––700 ns
Inductive Load – – 800 ns
Switching Operation – – 600 ns
IE = 200A – 9.6 – µC
= 15V, – – 200 ns
––29.0 nf
––1.5 nf
2
2
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