POWEREX CM200DU-24H Datasheet

CM200DU-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

T - (4 TYP.)

G2
E2
E1

G1

C1

PQ Q

KK

U

N

R

M

L

C1

H

J

H

G2
E2

E1
G1

F

G

EB

S - NUTS

(3 TYP)

C

CM

C2E1 E2

K

C2E1

A
D

C

L

E2

Dual IGBTMOD™
U-Series Module

200 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0

J 0.59 15.0

K 0.55 14.0

Dimensions Inches Millimeters

L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
SM6 M6

T0.26 Dia. 6.5 Dia.
U 0.002 0.05

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM200DU-24H is a
1200V (V

), 200 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 200 24

CES

57

57

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DU-24H
Dual IGBTMOD™ U-Series Module

200 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200DU-24H Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
200 Amperes

400* Amperes

200 Amperes
400* Amperes
1130 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 20mA, VCE = 10V 4.5 6 7.5 Volts

IC = 200A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts

IC = 200A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

G

EC

VCC = 600V, IC = 200A, VGE = 15V – 750 – nC

IE = 200A, VGE = 0V – – 3.2 Volts

rating.

j(max)

Dynamic Electrical Characteristics, TTj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switch Tur n-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VCE = 10V, VGE = 0V – – 10.5 nf

VCC = 600V, IC = 200A, – – 200 ns

V

= V

GE1

= 15V, – – 300 ns

GE2

RG = 1.6V, Resistive – – 300 ns

Load Switching Operation – – 350 ns
IE = 200A, diE/dt = -400A/µs––300ns
IE = 200A, diE/dt = -400A/µs – 1.1 – µC

––30nf

––6nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

58

58

Q Per IGBT 1/2 Module – – 0.11 °C/W

th(j-c)

D Per FWDi 1/2 Module – – 0.18 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.020 – °C/W

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DU-24H
Dual IGBTMOD™ U-Series Module

200 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

400

320

, (AMPERES)

C

240

160

80

COLLECTOR CURRENT, I

0

10

8

, (VOLTS)

CE(sat)

6

o

Tj = 25

C

VGE = 20V

15

12

11

10

9

8

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

IC = 400A

IC = 200A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

(TYPICAL)

IC = 80A

t

f

t

d(off)

t

d(on)

t

r

VCC = 600V
V

= ±15V

GE

R

= 1.6 Ω

G

T

= 125°C

j

2

10

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C
T

= 125°C

j

0 80 160 240 320

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

VGE = 0V
f = 1MHz

(TYPICAL)

CE

C

C

C

-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

GATE CHARGE, V

1

10

GE

IC = 200A

VCC = 400V

VCC = 600V

ies

oes

res

400

10

2

400

320

, (AMPERES)

C

240

TRANSFER CHARACTERISTICS

VCE = 10V

T

= 25°C

j

T

= 125°C

j

(TYPICAL)

160

80

COLLECTOR CURRENT, I

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

1.0 1.5 2.0 2.5 3.53.0 4.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

3

10

di/dt = -400A/µsec
T

= 25°C

j

, (ns)

rr

2

10

(TYPICAL)

(TYPICAL)

, (VOLTS)

EC

t

rr

I

rr

10

10

2

, (AMPERES)

rr

1

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

2

10

, (nF)

res

1

, C

10

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

10

20

16

, (VOLTS)

GE

12

8

REVERSE RECOVERY TIME, t

1

3

10

10

1

10

EMITTER CURRENT, IE, (AMPERES)

2

10

10

3

10

4

GATE-EMITTER VOLTAGE, V

0

REVERSE RECOVERY CURRENT, I

0

0 250 500

GATE CHARGE, QG, (nC)

750 1000

59

59

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DU-24H
Dual IGBTMOD™ U-Series Module

200 Amperes/1200 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

th(j-c)

10

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

( IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

0

10

= 0.11°C/W

-4

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

th(j-c)

10

Single Pulse

= 25°C

T

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.18°C/W

-4

10

0

1

10

-1

10

-2

10

-3

10

-3

10

60

60