POWEREX CM200DU-24H Datasheet
CM200DU-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
T - (4 TYP.)
G2
E2
E1
G1
C1
PQ Q
KK
U
N
R
M
L
C1
H
J
H
G2
E2
E1
G1
F
G
EB
S - NUTS
(3 TYP)
C
CM
C2E1 E2
K
C2E1
A
D
C
L
E2
Dual IGBTMOD™
U-Series Module
200 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0
Dimensions Inches Millimeters
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
SM6 M6
T0.26 Dia. 6.5 Dia.
U 0.002 0.05
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200DU-24H is a
1200V (V
), 200 Ampere Dual
CES
IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 200 24
CES
57
57
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DU-24H
Dual IGBTMOD™ U-Series Module
200 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200DU-24H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
1200 Volts
±20 Volts
200 Amperes
400* Amperes
200 Amperes
400* Amperes
1130 Watts
2500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 20mA, VCE = 10V 4.5 6 7.5 Volts
IC = 200A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts
IC = 200A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
G
EC
VCC = 600V, IC = 200A, VGE = 15V – 750 – nC
IE = 200A, VGE = 0V – – 3.2 Volts
rating.
j(max)
Dynamic Electrical Characteristics, TTj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Tur n-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VCE = 10V, VGE = 0V – – 10.5 nf
VCC = 600V, IC = 200A, – – 200 ns
V
= V
GE1
= 15V, – – 300 ns
GE2
RG = 1.6V, Resistive – – 300 ns
Load Switching Operation – – 350 ns
IE = 200A, diE/dt = -400A/µs––300ns
IE = 200A, diE/dt = -400A/µs – 1.1 – µC
––30nf
––6nf
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
58
58
Q Per IGBT 1/2 Module – – 0.11 °C/W
th(j-c)
D Per FWDi 1/2 Module – – 0.18 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.020 – °C/W
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