POWEREX CM200DU-24F Datasheet

CM200DU-24F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

TC MEASURING

EB

CM

S - NUTS (3 TYP)

C

C2E1

POINT

C2E1

K

RTC

PQ

RTC

T (4 TYP.)

G2

E2

U

E1

G1

V

N

R

M

H

J

H

L

G2
E2

C1

E1
G1

F

G

A
D

C

L

E2

E2

C1

Q

KK

Trench Gate Design
Dual IGBTMOD™

200 Amperes/ 1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recover y free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0

Dimensions Inches Millimeters

L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
SM6 M6

T0.26 Dia. 6.5 Dia.
U 0.02 0.5
V 0.62 15.85

Applications:

□ AC Motor Control
□ UPS
□ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM200DU-24F is a
1200V (V

), 200 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 200 24

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DU-24F
Trench Gate Design Dual IGBTMOD™

200 Amperes/1200 Volts

Absolute Maximum Ratings, T

= 25 °C unless otherwise specified

j

Ratings Symbol CM200DU-24F Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
200 Amperes

400* Amperes

200 Amperes

400* Amperes

890 Watts
Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) V

iso

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

Total Gate Charge Q
Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES
GES

GE(th)

CE(sat)

G

EC

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 40 µA

GES

IC = 20mA, VCE = 10V 5 6 7 Volts

IC = 200A, VGE = 15V, Tj = 25°C– 1.8 2.4 Volts

IC = 200A, VGE = 15V, Tj = 125°C– 1.9 – Volts

VCC = 600V, IC = 200A, VGE = 15V – 2200 – nC

IE = 200A, VGE = 0V – – 3.2 Volts

rating.

j(max)

2

2