POWEREX CM200DU-12H Datasheet

CM200DU-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

TC Measured

Point

E

CM

D

C

3-M5 Nuts

O

R

C2E1

GF

P PQ

E2

A
B

H

J

E2 C1C2E1

G1 E1 G2 G2

M

N

O

2 - Mounting
Holes

K

(6.5 Dia.)

L

0.110 - 0.5 Tab
S

T

C1

V

E2
G2

E1
G1

U

Dual IGBTMOD™
U-Series Module

200 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.7 94.0
B 3.15±0.01 80.0±0.25
C 1.89 48.0
D 0.94 24.0
E 0.28 7.0
F 0.67 17.0
G 0.91 23.0
H 0.91 23.0

J 0.43 11.0
K 0.71 18.0
L 0.16 4.0

Dimensions Inches Millimeters

M 0.47 12.0
N 0.53 13.5
O 0.1 2.5

P 0.63 16.0
Q 0.98 25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5

S 0.3 7.5

T 0.83 21.2
U 0.16 4.0

V 0.51 13.0

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM200DU-12H is a
600V (V

), 200 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 200 12

CES

29

29

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200DU-12H
Dual IGBTMOD™ U-Series Module

200 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200DU-12H Units

Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M5 Main Ter minal – 31 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
600 Volts
±20 Volts

200 Amperes

400* Amperes

200 Amperes

400* Amperes

650 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 20mA, VCE = 10V 4.5 6 7.5 Volts

IC = 200A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts

IC = 200A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

G

EC

VCC = 300V, IC = 200A, VGE = 15V – 400 – nC

IE = 200A, VGE = 0V – – 2.6 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies
oes
res

d(on)

r

d(off)

f

rr

rr

VCE = 10V, VGE = 0V – – 9.6 nf

VCC = 300V, IC = 200A, – – 150 ns

V

= V

GE1

GE2

RG = 3.1V, Resistive – – 300 ns

Load Switching Operation – – 300 ns
IE = 200A, diE/dt = -400A/µs – – 160 ns
IE = 200A, diE/dt = -400A/µs – 0.48 – µC

= 15V, – – 400 ns

– – 17.6 nf

– – 2.6 nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

30

30

Q Per IGBT 1/2 Module – – 0.19 °C/W

th(j-c)

D Per FWDi 1/2 Module – – 0.35 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.035 – °C/W