POWEREX CM15TF-24H Datasheet
CM15TF-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
S - DIA.
(2 TYP.)
G
J
M
P
BuP
BuN
B
R R R
BuP
EuP
BvP
BvN
H H
C
EvP
v
EvN
EvP
EvN
P
UVW
N
BuN
EuN
K
.250 TAB
BvP
EuP
u
BvN
EuN
N
BwP
BwN
EwP
EwN
N
.110 TAB
PQQ
BwP
BwN
EwP
w
EwN
L
E
D
F
R
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0
B 3.66±0.01 93.0±0.2
C 3.19 81.0
D 1.77 45.0
E 1.18 30.0
F 1.04 26.5
G 1.01 25.6
H 0.85 21.5
Dimensions Inches Millimeters
K 0.79 20.0
L 0.71 18.0
M 0.69+0.02 17.5±0.5
N 0.69 17.5
P 0.63 16.0
Q 0.55 14.0
R 0.30 7.5
S 0.22 Dia. Dia. 5.5
J 0.83 21.0
Six-IGBT IGBTMOD™
H-Series Module
15 Amperes/ 1200 Volts
Description:
Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM15TF-24H
is a 1200V (V
Six-IGBT IGBTMOD™ Power
Module.
Type Current Rating V
CM 15 24
CE(sat)
(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking
), 15 Ampere
CES
Amperes Volts (x 50)
CES
323
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM15TF-24H
Six-IGBT IGBTMOD™ H-Series Module
15 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM15TF-24H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M5 Mounting Screws – 17 in-lb
Module Weight (T ypical) – 150 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to 150 °C
–40 to 125 °C
1200 Volts
±20 Volts
15 Amperes
30* Amperes
15 Amperes
30* Amperes
150 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5
GES
µ
A
IC =1. 5mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 15A, VGE = 15V – 2.5 3.4** Volts
IC = 15A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 600V, IC = 15A, VGS = 15V – 75 – nC
IE = 15A, VGS = 0V – – 3.5 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Load Turn-on Delay Time t
d(on)
Resistive Rise Time t
Switch Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V, f = 1MHz – – 1.1 nF
VCC = 600V, IC = 150A, – – 200 ns
V
= V
GE1
= 15V, RG = 21Ω – – 150 ns
GE2
IE = 15A, diE/dt = –30A/µs––250ns
IE = 15A, diE/dt = –30A/µs – 0.11 –
– – 3 nF
– – 0.6 nF
– – 100 ns
– – 350 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.058 °C/W
Per IGBT – – 0.80 °C/W
Per FWDi – – 1.40 °C/W
324
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