POWEREX CM15MD1-24H Datasheet
CM15MD1-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
K
EV
GE
E
L
GW
PMM P
L
K
GUGV
GEEWGBG
M M
K
K
K
GW E
GGE
K
GB NOT
CONNECTED
C
B
Z
S
V
45°
MAIN TERMINAL
"T" THICK
X
(2 PLACES)
R
W
CONTROL
TERMINAL
P
P1
G
HH
P1PNGE
Q
F
Q
RS T B VUW
N
Y
L
J
K
GU
EU
GV
R "U"
(2 PLACES)
LABEL
CI Module
Three Phase Converter +
Three Phase Inverter
15 Amperes/1200 Volts
Description:
Powerex CI Modules are
designed for use in switching
applications. Each module
consists of a three phase diode
converter section and a three
phase IGBT inverter section. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
R
S
T
N
B
GU GV GW
EU
G
UVW
UVW
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.53 115.0
B 2.36 60.0
C 1.18 30.0
D 0.18 4.5
E 4.13 105.0
F 0.20 5.0
G 0.31 8.0
H 0.59 15.0
J 0.68 17.2
K 0.10 2.54
L 0.40 10.16
M 0.49 12.5
EV
G
EW
G
Dimensions Inches Millimeters
N 0.51 13.0
P 0.59 15.0
Q 1.14 29.0
R 2.28 58.0
S 0.16 4.0
T 0.02 0.6
U 0.22 5.5
V 0.08 2.0
W 0.02 0.6
X 0.35 9.0
Y 0.25 6.3
Z 0.47 12.0
Features:
□ Low Drive Power
□ Low V
CE(sat)
□ Discrete Super-Fast
Recovery (70ns)
Free-Wheel Diodes
□ High Frequency Operation
E
(20-25 kHz)
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ General Purpose Inverters
□ Robotics
Ordering Information:
Example: Select the complete nine
digit module part number you
desire from the table below - i.e.
CM15MD1-24H is a 1200V (V
15 Ampere CI Power Module.
Type Amperes Volts (x 50)
CM 15 24
Current Rating VCES
CES
),
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM15MD1-24H
CI Module
Three Phase Converter + Three Phase Inverter
15 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics Symbol CM15MD1-24H Units
Power Device Junction Temperature T
Storage T emperature T
j
stg
-40 to 150 °C
-40 to 125 °C
Mounting Torque, M4 Mounting Screws — 13 in-lb
Module Weight (Typical) — 100 Grams
Isolation Voltage, AC 1 minute, 60Hz V
RMS
2500 Volts
Converter Sector
Repetitive Peak Reverse Voltage V
Recommended AC Input Voltage E
DC Output Current I
Surge (Non-repetitive) Forward Current I
RRM
a
O
FSM
I2t for Fusing I2t93A
1600 Volts
440 Volts
15 Amperes
150 Amperes
2
s
IGBT Inverter Sector
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current I
Collector Current (Pulse)* I
Emitter Current** I
Emitter Current** (Pulse)* I
Maximum Collector Dissipation P
CES
GES
C
CM
E
EM
C
1200 Volts
±20 Volts
15 Amperes
30 Amperes
15 Amperes
30 Amperes
66 Watts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Converter Sector
Repetitive Reverse Current I
Forward Voltage Drop V
Thermal Resistance (Junction-to-Fin) R
RRM
FM
th(j-f)
VR = V
, Tj = 150°C——8mA
RRM
IF = 15A — — 1.5 Volts
Per Diode — — 1.7 °C/W
IGBT Inverter Sector
Collector Cutoff Current I
Gate-Emitter Threshold V oltage V
Gate-Emitter Cutoff Current I
Collector-Emitter Saturation Voltage V
CES
GE(th)
GES
CE(sat)
VCE = V
, VGE = 0V — — 1 mA
CES
VCE = 10V, IC = 1.5mA 4.5 6.0 7.5 Volts
VGE = V
, VCE = 0V — — 0.5 µA
GES
VGE = 15V, IC = 15A, Tj = 25°C — 2.7 3.4 Volts
VGE = 15V, IC = 15A, Tj = 150°C — 2.45 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Resistive Turn-on Time t
d(on)
Load Rise Time t
Switching Turn-off Time t
d(off)
Times Fall Time t
Emitter-Collector Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Thermal Resistance (Junction-to-Fin) R
ies
oes
res
G
r
f
EC
rr
rr
th(j-f)
VGE = 0V, VCE = 10V — — 2.4 nF
VCC = 600V, IC = 15A, VGE = 15V — 75 — nC
V
= V
GE1
= 15V, — — 100 nS
GE2
VCC = 600V, IC = 15A, — — 200 nS
Rg = 21Ω, — — 150 nS
Resistive Load — — 350 nS
IE = 15A, VGE = 0V — — 3.5 Volts
IE = 15A, VGE = 0V, — — 250 nS
diE/dt = -30A/µs — 0.11 — µC
Per IGBT — — 1.9 °C/W
— — 3.0 nF
— — 0.6 nF
Per FWDi — — 2.4 °C/W
*Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating.
**Characteristics of the anti-parallel emitter-collector free-wheel diode.
2
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