POWEREX CM150E3U-24H Datasheet

CM150E3U-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A
D

EB

CM

S - NUTS (3 TYP)

C

C2E1 E2

K

T - (4 TYP.)

C

L

G2
E2

C1

PQ Q

N

KK

R

H

U

F

M

L

F

G

Chopper IGBTMOD™
U-Series Module

150 Amperes/1200 Volts

Description:

Powerex Chopper IGBTMOD™
Modules are designed for use in
switching applications. Each module
consists of one IGBT Transistor
having a reverse-connected super­fast recovery free-wheel diode and
an anode-collector connected super­fast recover y free-wheel diode. All
components and interconnects are
isolated from the heat sinking base­plate, offering simplified system
assembly and thermal management.

C2E1

E2

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.30 7.5
G 0.16 4.0
H 0.24 6.0

J 0.11 2.8

K 0.71 18.0

G2
E2

C1

Dimensions Inches Millimeters

L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.16 4.0
SM6 M6

T0.26 Dia. 6.5 Dia.
U 0.02 0.5

Features:

□ Low Drive Power
□ Low V

CE(sat)

□ Discrete Super-Fast Recover y

Free-Wheel Diode

□ High Frequency Operation

(15-20kHz)

□ Isolated Baseplate for Easy

Heat Sinking

Applications:

□ DC Motor Control
□ Boost Regulator

Ordering Information:

Example: Select the complete
module number you desire from the
table - i.e. CM150E3U-24H is a
1200V (V

), 150 Ampere Chopper

CES

IGBTMOD™ Pow er Module.

Current Rating V

Type Amperes Volts (x 50)

CM 150 24

CES

139

139

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150E3U-24H
Chopper IGBTMOD™ U-Series Module

150 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM150E3U-24H Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts

150 Amperes

300* Amperes

150 Amperes

300* Amperes

890 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 15mA, VCE = 10V 4.5 6 7.5 Volts

IC = 150A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts

IC = 150A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
Emitter-Collector Voltage V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

G
EC
FM

VCC = 600V, IC = 150A, VGE = 15V – 560 – nC

IE = 150A, VGE = 0V – – 3.2 Volts

IF = 150A, Clamp Diode Part – – 3.2 Volts

rating.

j(max)

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Tur n-on Delay Time t
Load Rise Time t
Switch Tur n-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
Diode Reverse Recover y Time t
Diode Reverse Recover y Charge Q

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies
oes
res

d(on)

r

d(off)

f

rr

rr

rr

rr

VCE = 10V, VGE = 0V – – 7.4 nf

VCC = 600V, IC = 150A, – – 200 ns

V

= V

GE1

GE2

RG = 2.1V, Resistive – – 300 ns

Load Switching Operation – – 350 ns
IE = 150A, diE/dt = -300A/µs––300ns
IE = 150A, diE/dt = -300A/µs – 0.82 – µC

IF = 150A, Clamp Diode Part – – 300 ns

diF/dt = -300A/µs – 0.82 – µC

= 15V, – – 250 ns

––22nf

– – 4.4 nf

140

140