POWEREX CM150DU-12F Datasheet

CM150DU-12F

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

P - NUTS (3 PLACES)

TC MEASURING

N

CM

C2E1 E2 C1

B

M

C

C2E1

K

POINT

RTC

A

D

K

E2

J

E2G2G1E1

RTC

Q (2 PLACES)

E

F

H

G

F

R

L

G2
E2

C1

E1
G1

Trench Gate Design
Dual IGBTMOD™

150 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran ­sistor having a reverse-connected
super-fast recover y free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0
B 1.89 48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.16 4.0
G 0.71 18.0
H 0.02 0.5

Dimensions Inches Millimeters

J 0.53 13.5
K 0.91 23.0
L 1.13 28.7
M 0.67 17.0
N 0.28 7.0
PM6.5 M6.5
Q 0.26 Dia. 6.5 Dia.
R 0.16 4.0

Applications:

□ AC Motor Control
□ UPS
□ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM150DU-12F is a
600V (V

), 150 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 150 12

CES

1

1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150DU-12F
Trench Gate Design Dual IGBTMOD™

150 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM150DU-12F Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 310 Grams
Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) V

iso

-40 to 150 °C

-40 to 125 °C
600 Volts
±20 Volts
150 Amperes

300* Amperes

150 Amperes

300* Amperes

520 Watts

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

Total Gate Charge Q
Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES
GES

GE(th)

CE(sat)

G

EC

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 20 µA

GES

IC = 15mA, VCE = 10V 5 6 7 Volts

IC = 150A, VGE = 15V, Tj = 25°C– 1.6 2.2 Volts

IC = 150A, VGE = 15V, Tj = 125°C– 1.6 – Volts

VCC = 300V, IC = 150A, VGE = 15V – 930 – nC

IE = 150A, VGE = 0V – – 2.6 Volts

rating.

j(max)

2

2

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150DU-12F
Trench Gate Design Dual IGBTMOD™

150 Amperes/600 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t

d(on)

Load Rise Time t
Switch Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

ies

oes

res

r

f

rr

rr

VCE = 10V, VGE = 0V – – 2.7 nf

VCC = 300V, IC = 150A, – – 120 ns

V

= V

GE1

= 15V, – – 100 ns

GE2

RG = 4.2⍀,––350 ns

Inductive Load – – 250 ns

Switching Operation – – 150 ns

IE = 150A – 2.8 – µC

––41nf

––1.5 nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance R

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

QPer IGBT 1/2 Module, Tc Reference – 0.24 °C/W

th(j-c)

Point per Outline Drawing

DPer FWDi 1/2 Module, Tc Reference – – 0.47 °C/W

th(j-c)

Point per Outline Drawing

'Q Per IGBT 1/2 Module, – 0.16 °C/W

th(j-c)

Tc Reference Point Under Chip

th(c-f)

Per Module, Thermal Grease Applied – 0.035 – °C/W

3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM150DU-12F
Trench Gate Design Dual IGBTMOD™

150 Amperes/600 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

300

250

200

, (AMPERES)

C

Tj = 25°C

11

15

VGE = 20V

10

9.5

9

150

100

8.5

7.5

(TYPICAL)

(TYPICAL)

2

10

8

EC

VCC = 300V
V

= ±15V

GE

R

= 4.2 Ω

G

T

= 25°C

j

Inductive Load

, (VOLTS)

50

COLLECTOR CURRENT, I

0

01234

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

Tj = 25°C

2

10

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

0 1.0 2.0 3.0 4.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

2

10

I

, (ns)

rr

REVERSE RECOVERY TIME, t

rr

t

rr

1

10

0

10

1

10

EMITTER CURRENT, IE, (AMPERES)

SATURATION VOLTAGE CHARACTERISTICS

3

)

, (VOLTS

2

CE(sat)

1

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

0

2

10

, (nF)

res

1

, C

10

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

10

2

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

10

8

4

GATE-EMITTER VOLTAGE, V

0

REVERSE RECOVERY CURRENT, I

10

3

10

0

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

050100 150 200

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

CE

C

C

VGE = 0V

-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

GATE CHARGE, V

C

1

10

GE

IC = 150A

VCC = 200V

VCC = 300V

0 200

400 600 1000 1200 1400

GATE CHARGE, QG, (nC)

800

oes

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

5

Tj = 25°C

4

, (VOLTS)

CE(sat)

3

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

300250

ies

res

2

10

068 1210 181614 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

SWITCHING CHARACTERISTICS

3

10

2

10

1

10

SWITCHING TIME, (ns)

0

10

0

10

COLLECTOR CURRENT, IC, (AMPERES)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

10-310

1

th(j-c)

10

Per Unit Base
R

= 0.24°C/W (IGBT)

th(j-c)

R

= 0.47°C/W (FWDi)

th(j-c)

0

10

Single Pulse
T

= 25°C

C

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Z

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

IC = 300A

IC = 150A

IC = 60A

HALF-BRIDGE

(TYPICAL)

t

d(off)

t

f

t

d(on)

t

r

1

10

(IGBT & FWDi)

-2

10

10

TIME, (s)

VCC = 300V
V
R
T
Inductive Load

10

-1

-5

= ±15V

GE

= 4.2Ω

G

= 125°C

j

2

0

10

-4

10

3

10

1

10

-1

10

-2

10

-3

10

-3

10

4