POWEREX CM1200HA-34H Datasheet

MITSUBISHI HVIGBT MODULES

CM1200HA-34H

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM1200HA-34H

● IC................................................................ 1200A

HIGH POWER SWITCHING USE

● V

CES ....................................................... 1700V

● Insulated Type

● 1-element in a pack

APPLICATION

Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

130
114

4 - M8 NUTS

20

±0.25

30

140

124

6 - φ 7 MOUNTING HOLES

14.5

C

C

G
E

E

CIRCUIT DIAGRAM

35

11

C

E

5

C

E

CM

3 - M4 NUTS

57

±0.25

C

16.5

18

E

18.5

2.5

61.5

57

±0.25

C

E

G

38

5

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

28

LABEL

31.5

Feb. 2000

MITSUBISHI HVIGBT MODULES

CM1200HA-34H

HIGH POWER SWITCHING USE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS (Tj = 25°C)

Symbol Item Conditions UnitRatings

CES

V
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum collector dissipation

(Note 3)

Junction temperature
Storage temperature
Isolation voltage

—

Mounting torque

—

Mass

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol Item Conditions

CES

I
V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)

Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time

(Note 2)

Emitter-collector voltage

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge
Thermal resistance

Contact thermal resistance

2. I

E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

j) should not increase beyond 150°C.

GE = 0V

V

CE = 0V

V

C = 25°C

T
Pulse (Note 1)

C = 25°C

T
Pulse (Note 1)

C = 25°C, IGBT part

T

—

—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value

VCE = VCES, VGE = 0V

C = 120mA, VCE = 10V

I
V

GE = VGES, VCE = 0V
j = 25°C

T

j = 125°C

T
V

CE = 10V
GE = 0V

V

CC = 850V, IC = 1200A, VGE = 15V

V

CC = 850V, IC = 1200A

V

GE1 = VGE2 = 15V

V

G = 1.6Ω

R

I

C = 1200A, VGE = 15V (Note 4)

Resistive load switching operation

E = 1200A, VGE = 0V

I

E = 1200A

I
die / dt = –2400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied

12500
–40 ~ +150
–40 ~ +125

6.67 ~ 13.00

2.84 ~ 6.00

0.88 ~ 2.00

Limits

Min Typ Max

—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

0.008

—

INSULATED TYPE

1700

±20
1200
2400
1200
2400

4000

1.5

—

5.54.5

—

2.75

3.30
140

20.0

7.6

6.6
—
—
—
—

2.40
—
200
—
—

24

6.5

0.5

3.58
—
—
—
—
—

1.20

1.50

2.00

0.60

3.12

2.00
—

0.010

0.032
—

V
V
A
A
A
A

W

°C
°C

V
N·m
N·m
N·m

kg

Unit

mA

V

µA

V

nF
nF
nF

µC

µs
µs
µs
µs

V

µs

µC

K/W
K/W
K/W

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Feb. 2000