POWEREX CM10MD3-12H Datasheet

CM10MD3-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

S
V

30°

MAIN TERMINAL

R
S

NOT CONNECTED

(4 PLACES)

R

"T" THICK

X

CONTROL
TERMINAL

P1

K

N

A

G

H

Q

D

Q

W

F

N H

Y

GU GV GW
EU

G

UVW

UVW

L

J

K

K

H

GUP1KEVGVEU GVGUEWGW EGW

RASNUVW

H

EV

G

L

LABEL

E

P

L

K

P

H

K

NOT
CONNECTED

C

U

D

Z

B

E

K

K

K

H

EW

G

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.54 90.0
B 2.52 64.0
C 1.26 32.0
D 0.35 9.0
E 3.15 80.0
F 0.20 5.0
G 0.30 7.5
H 0.32 8.0

J 0.48 12.28
K 0.10 2.54
L 0.30 7.62
M 0.19 4.8

Dimensions Inches Millimeters

N 0.65 16.5
P 0.49 12.5
Q 1.04 26.5
R 2.09 53.0
S 0.08 2.0
T 0.02 0.5
U 2.13 54.0
V 0.04 1.0

W 0.03 0.8

X 0.32 8.0
Y 0.21 5.3
Z 0.20 5.0

CI Module

Single Phase Converter +
Three Phase Inverter
10 Amperes/600 Volts

Description:

Powerex CI Modules are
designed for use in switching
applications. Each module
consists of a single phase diode
converter section and a three
phase IGBT inverter section. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast

□ High Frequency Operation
□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ General Purpose Inverters
□ Robotics

Ordering Information:

Example: Select the complete nine
digit module part number you
desire from the table below - i.e.
CM10MD3-12H is a 600V (V
10 Ampere CI Power Module.

Type Amperes Volts (x 50)

CM 10 12

CE(sat)

Recovery (70ns)
Free-Wheel Diodes

(20-25 kHz)
Heat Sinking

Current Rating V

CES

CES

),

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM10MD3-12H
CI Module
Single Phase Converter + Three Phase Inverter

10 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Characteristics Symbol CM10MD3-12H Units

Power Device Junction Temperature T
Storage Temperature T

j

stg

-40 to 150 °C

-40 to 125 °C
Mounting Torque, M4 Mounting Screws — 13 in-lb
Module Weight (T ypical) — 60 Grams
Isolation Voltage, AC 1 minute, 60Hz V

RMS

2500 Volts

Converter Sector

Repetitive Peak Reverse Voltage V
Recommended AC Input Voltage E
DC Output Current I
Surge (Non-repetitive) Forward Current I

RRM

a

O

FSM

800 Volts
220 Volts

15 Amperes

300 Amperes

I2t for Fusing I2t 375 A2s

IGBT Inverter Sector

Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current I
Collector Current (Pulse)* I
Emitter Current** I
Emitter Current** (Pulse)* I
Maximum Collector Dissipation P

CES
GES

C

CM

E

EM

C

600 Volts
±20 Volts

10 Amperes
20 Amperes
10 Amperes
20 Amperes
36 Watts

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Converter Sector

Repetitive Reverse Current I
Forward V oltage Drop V
Thermal Resistance (Junction-to-Fin) R

RRM

FM

th(j-f)

IGBT Inverter Sector

Collector Cutoff Current I
Gate-Emitter Threshold V oltage V
Gate-Emitter Cutoff Current I
Collector-Emitter Saturation Voltage V

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Resistive Turn-on Delay Time t
Load Rise Time t
Switching Turn-off Delay Time t
Times Fall Time t
Emitter-Collector Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Thermal Resistance (Junction-to-Fin) R

*Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating.

**Characteristics of the anti-parallel emitter-collector free-wheel diode.

2

CES

GE(th)

GES

CE(sat)

ies

oes

res

G

d(on)

r

d(off)

f

EC

rr

rr

th(j-f)

VR = V

, Tj = 150°C——8mA

RRM

IF = 25A — — 1.6 Volts

Per Diode — — 3.6 °C/W

VCE = V

, VGE = 0V — — 1 mA

CES

VCE = 10V, IC = 1mA 4.5 6.0 7.5 Volts

VGE = V

, VCE = 0V — — 0.5 µA

GES

VGE = 15V, IC = 10A, Tj = 25°C — 2.1 2.8 Volts

VGE = 15V, IC = 10A, Tj = 150°C — 2.15 — Volts

— — 1.0 nF

VGE = 0V, VCE = 10V — — 0.9 nF

— — 0.2 nF

VCC = 300V, IC = 10A, VGE = 15V — 30 — nC

V

= V

GE1

= 15V, — — 120 nS

GE2

VCC = 300V, IC = 10A, — — 300 nS

Rg = 63Ω,——200nS

Resistive Load — — 300 nS
IE = 10A, VGE = 0V — — 2.8 Volts
IE = 10A, VGE = 0V, — — 110 nS

diE/dt = -20A/µs — 0.03 — µC

Per IGBT — — 3.5 °C/W

Per FWDi — — 4.0 °C/W