CM10MD1-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
S
V
30°
MAIN TERMINAL
R
S
T
(4 PLACES)
R
"T" THICK
X
Q
Q
CONTROL
TERMINAL
K
P1
A
N
G
H
D
F
N H
W
Y
GU GV GW
EU
G
UVW
UVW
L
J
K
K
H
GUAP1KEVGVEU GVGUEWGW EGW
RTSNUVW
P
H
L
LABEL
E
EV
G
L
K
K
P
H
H
NOT
K
K
EW
G
CONNECTED
K
C
U
B
D
Z
E
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.54 90.0
B 2.52 64.0
C 1.26 32.0
D 0.35 9.0
E 3.15 80.0
F 0.20 5.0
G 0.30 7.5
H 0.32 8.0
J 0.48 12.28
K 0.10 2.54
L 0.30 7.62
M 0.19 4.8
Dimensions Inches Millimeters
N 0.65 16.5
P 0.49 12.5
Q 1.04 26.5
R 2.09 53.0
S 0.08 2.0
T 0.02 0.5
U 2.13 54.0
V 0.04 1.0
W 0.03 0.8
X 0.32 8.0
Y 0.21 5.3
Z 0.20 5.0
CI Module
Three Phase Converter +
Three Phase Inverter
10 Amperes/1200 Volts
Description:
Powerex CI Modules are
designed for use in switching
applications. Each module
consists of a three phase diode
converter section and a three
phase IGBT inverter section. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ General Purpose Inverters
□ Robotics
Ordering Information:
Example: Select the complete nine
digit module part number you
desire from the table below - i.e.
CM10MD1-24H is a 1200V (V
10 Ampere CI Power Module.
Type Amperes Volts (x 50)
CM 10 24
CE(sat)
Recovery (70ns)
Free-Wheel Diodes
(20-25 kHz)
Heat Sinking
Current Rating V
CES
CES
),
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM10MD1-24H
CI Module
Three Phase Converter + Three Phase Inverter
10 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics Symbol CM10MD1-24H Units
Power Device Junction Temperature T
Storage T emperature T
j
stg
-40 to 150 °C
-40 to 125 °C
Mounting Torque, M4 Mounting Screws — 13 in-lb
Module Weight (Typical) — 60 Grams
Isolation Voltage, AC 1 minute, 60Hz V
RMS
2500 Volts
Converter Sector
Repetitive Peak Reverse Voltage V
Recommended AC Input Voltage E
DC Output Current I
Surge (Non-repetitive) Forward Current I
RRM
a
O
FSM
I2t for Fusing I2t42A
1600 Volts
440 Volts
10 Amperes
100 Amperes
2
s
IGBT Inverter Sector
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current I
Collector Current (Pulse)* I
Emitter Current** I
Emitter Current** (Pulse)* I
Maximum Collector Dissipation P
CES
GES
C
CM
E
EM
C
1200 Volts
±20 Volts
10 Amperes
20 Amperes
10 Amperes
20 Amperes
57 Watts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Converter Sector
Repetitive Reverse Current I
Forward Voltage Drop V
Thermal Resistance (Junction-to-Fin) R
RRM
FM
th(j-f)
IGBT Inverter Sector
Collector Cutoff Current I
Gate-Emitter Threshold V oltage V
Gate-Emitter Cutoff Current I
Collector-Emitter Saturation Voltage V
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Resistive Turn-on Delay Time t
Load Rise Time t
Switching Turn-off Delay Time t
Times Fall Time t
Emitter-Collector Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Thermal Resistance (Junction-to-Fin) R
*Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating.
**Characteristics of the anti-parallel emitter-collector free-wheel diode.
2
CES
GE(th)
GES
CE(sat)
ies
oes
res
G
d(on)
r
d(off)
f
EC
rr
rr
th(j-f)
VR = V
, Tj = 150°C——8mA
RRM
IF = 10A — — 1.7 Volts
Per Diode — — 2.7 °C/W
VCE = V
, VGE = 0V — — 1 mA
CES
VCE = 10V, IC = 1mA 4.5 6.0 7.5 Volts
VGE = V
, VCE = 0V — — 0.5 µA
GES
VGE = 15V, IC = 10A, Tj = 25°C — 2.7 3.4 Volts
VGE = 15V, IC = 10A, Tj = 150°C — 2.45 — Volts
— — 2.0 nF
VGE = 0V, VCE = 10V — — 1.5 nF
— — 0.4 nF
VCC = 600V, IC = 10A, VGE = 15V — 50 — nC
V
= V
GE1
= 15V, — — 100 nS
GE2
VCC = 600V, IC = 10A, — — 200 nS
Rg = 31Ω, — — 150 nS
Resistive Load — — 350 nS
IE = 10A, VGE = 0V — — 3.5 Volts
IE = 10A, VGE = 0V, — — 250 nS
diE/dt = -20A/ms — 0.08 — µC
Per IGBT — — 2.2 °C/W
Per FWDi — — 3.1 °C/W