POWEREX CM10MD1-24H Datasheet

CM10MD1-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
S
V
30°
MAIN TERMINAL
R S T
(4 PLACES)
R
"T" THICK
X
Q
Q
CONTROL TERMINAL
K
P1
A
N
G
H
D
F
N H
W
Y
GU GV GW EU
G
UVW
UVW
L
J
K
K
H
GUAP1KEVGVEU GVGUEWGW EGW
RTSNUVW
P
H
L
LABEL
E
EV
G
L
K
K
P
H
H
NOT
K
K
EW
G
CONNECTED
K
C
U
B
D
Z
E
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.54 90.0 B 2.52 64.0 C 1.26 32.0 D 0.35 9.0 E 3.15 80.0 F 0.20 5.0 G 0.30 7.5 H 0.32 8.0
J 0.48 12.28 K 0.10 2.54 L 0.30 7.62 M 0.19 4.8
Dimensions Inches Millimeters
N 0.65 16.5 P 0.49 12.5 Q 1.04 26.5 R 2.09 53.0 S 0.08 2.0 T 0.02 0.5 U 2.13 54.0 V 0.04 1.0
W 0.03 0.8
X 0.32 8.0 Y 0.21 5.3 Z 0.20 5.0
CI Module
Three Phase Converter + Three Phase Inverter 10 Amperes/1200 Volts
Powerex CI Modules are designed for use in switching applications. Each module consists of a three phase diode converter section and a three phase IGBT inverter section. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
Low Drive PowerLow VDiscrete Super-Fast
High Frequency OperationIsolated Baseplate for Easy
Applications:
AC Motor ControlMotion/Servo ControlGeneral Purpose InvertersRobotics
Ordering Information:
Example: Select the complete nine digit module part number you desire from the table below - i.e. CM10MD1-24H is a 1200V (V 10 Ampere CI Power Module.
Type Amperes Volts (x 50)
CM 10 24
CE(sat)
Recovery (70ns) Free-Wheel Diodes
(20-25 kHz) Heat Sinking
Current Rating V
CES
CES
),
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM10MD1-24H CI Module Three Phase Converter + Three Phase Inverter
10 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics Symbol CM10MD1-24H Units
Power Device Junction Temperature T Storage T emperature T
j
stg
-40 to 150 °C
-40 to 125 °C Mounting Torque, M4 Mounting Screws 13 in-lb Module Weight (Typical) 60 Grams Isolation Voltage, AC 1 minute, 60Hz V
RMS
2500 Volts
Converter Sector
Repetitive Peak Reverse Voltage V Recommended AC Input Voltage E DC Output Current I Surge (Non-repetitive) Forward Current I
RRM
a
O
FSM
I2t for Fusing I2t42A
1600 Volts
440 Volts
10 Amperes
100 Amperes
2
s
IGBT Inverter Sector
Collector-Emitter Voltage (G-E Short) V Gate-Emitter Voltage (C-E Short) V Collector Current I Collector Current (Pulse)* I Emitter Current** I Emitter Current** (Pulse)* I Maximum Collector Dissipation P
CES GES
C
CM
E
EM
C
1200 Volts
±20 Volts
10 Amperes 20 Amperes 10 Amperes 20 Amperes 57 Watts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Converter Sector
Repetitive Reverse Current I Forward Voltage Drop V Thermal Resistance (Junction-to-Fin) R
RRM
FM
th(j-f)
IGBT Inverter Sector
Collector Cutoff Current I Gate-Emitter Threshold V oltage V Gate-Emitter Cutoff Current I Collector-Emitter Saturation Voltage V
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Total Gate Charge Q Resistive Turn-on Delay Time t Load Rise Time t Switching Turn-off Delay Time t Times Fall Time t Emitter-Collector Voltage V Reverse Recovery Time t Reverse Recovery Charge Q Thermal Resistance (Junction-to-Fin) R
*Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating.
**Characteristics of the anti-parallel emitter-collector free-wheel diode.
2
CES
GE(th)
GES
CE(sat)
ies oes res
G
d(on)
r
d(off)
f
EC
rr
rr
th(j-f)
VR = V
, Tj = 150°C—8mA
RRM
IF = 10A 1.7 Volts
Per Diode 2.7 °C/W
VCE = V
, VGE = 0V 1 mA
CES
VCE = 10V, IC = 1mA 4.5 6.0 7.5 Volts
VGE = V
, VCE = 0V 0.5 µA
GES
VGE = 15V, IC = 10A, Tj = 25°C 2.7 3.4 Volts
VGE = 15V, IC = 10A, Tj = 150°C 2.45 Volts
2.0 nF
VGE = 0V, VCE = 10V 1.5 nF
0.4 nF
VCC = 600V, IC = 10A, VGE = 15V 50 nC
V
= V
GE1
= 15V, 100 nS
GE2
VCC = 600V, IC = 10A, 200 nS
Rg = 31, 150 nS
Resistive Load 350 nS IE = 10A, VGE = 0V 3.5 Volts IE = 10A, VGE = 0V, 250 nS
diE/dt = -20A/ms 0.08 µC
Per IGBT 2.2 °C/W
Per FWDi 3.1 °C/W
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