POWEREX CM100TU-12H Datasheet
CM100TU-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
B
C
D
Measured
GuP
EuP
TC
Point
5 - M4 NUTS
P
GuP
EuP
U
G
E
GvP
EvP
GwP
EwP
F
EERHH
uvw
J J
EEE
HH
GvP
EvP
V
G
GuN
EuN
GvN
EvN
GwP
EwP
W
S 4 - Mounting
Holes
T
C
Measured
Point
GwN
EwN
K
N
0.110 - 0.5 Tab
P
Q
K
L
M
Six IGBTMOD™
U-Series Module
100 Amperes/ 600 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode
Heat Sinking
GuN
EuN
N
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.02 102.0
B 3.15±0.01 80.0±0.25
C 3.58 91.0
D 2.91±0.01 74.0±0.25
E 0.43 11.0
F 0.79 20.0
G 0.39 10.0
H 0.75 19.1
J 0.79 20.0
GvN
EvN
Dimensions Inches Millimeters
GwN
EwN
K 0.05 1.25
L 0.74 18.7
M 1.55 39.3
N 0.12 3.05
P 0.32 8.1
Q 1.02 26.0
R 0.47 11.85
S 0.22 Dia. 5.5 Dia.
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100TU-12H is a
600V (V
), 100 Ampere Six-
CES
IGBT IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 100 12
CES
81
81
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TU-12H
Six IGBTMOD™ U-Series Module
100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM100TU-12H Units
Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M4 Main Ter minal – 15 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 570 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
600 Volts
±20 Volts
100 Amperes
200* Amperes
100 Amperes
200* Amperes
400 Watts
2500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 10mA, VCE = 10V 4.5 6 7.5 Volts
IC = 100A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts
IC = 100A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
G
EC
VCC = 300V, IC = 100A, VGE = 15V – 200 – nC
IE = 100A, VGE = 0V – – 2.6 Volts
rating.
j(max)
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VCE = 10V, VGE = 0V – – 4.8 nf
VCC = 300V, IC = 100A, – – 100 ns
V
= V
GE1
= 15V, – – 250 ns
GE2
RG = 6.3V, Resistive – – 200 ns
Load Switching Operation – – 300 ns
IE = 100A, diE/dt = -200A/µs––160ns
IE = 100A, diE/dt = -200A/µs – 0.24 – µC
– – 8.8 nf
– – 1.3 nf
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
82
82
Q Per IGBT 1/6 Module – – 0.31 °C/W
th(j-c)
D Per Free-Wheel Diode 1/6 Module – – 0.7 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.018 – °C/W
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