POWEREX CM100TJ-12F Datasheet

CM100TJ-12F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

A D

F

19

20

Tc

J

B

21

L

C

21

1

2

3

4

20

19

S

2

1

P

E

G

NOT

CONNECTED

17

T

4

3

5

6

7

Q

Y X

5 6

7

8

17 15

CONNECTED

1618

8

10

11

12

NOT

9

H

15

14

M

N

13

10

12

11

R

13

14

U

K

Tc

L

W

V

Trench Gate Design Six IGBTMOD™

100 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recover y free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Features:

□ Low Drive Power □ Low V □ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.78 121.5 B 2.42 61.5 C 0.67 17.0 D 4.33±0.01 110.0±0.25 E 3.00 76.2 F 0.75 19.05 G 0.60 15.24 H 0.15 3.81

J 2.26 57.5 K 1.97±0.01 50.0±0.25 L 1.07 27.0

Dimensions Inches Millimeters

M 0.15 3.81 N 0.75 19.05 P 0.15 3.81 Q 3.00 76.2 R 0.60 15.24 S 0.45 1.15

T 0.04 1.0 U 0.22 Dia. 5.5 Dia. V 0.12 3.0 W 0.81 20.5 X 3.72 94.5 Y 4.62 118.11

Applications:

□ AC Motor Control □ UPS □ Battery Powered Supplies

Ordering Information:

Example: Select the complete module number you desire from the table - i.e. CM100TJ-12F is a 600V (V

), 100 Ampere Six-

CES

IGBT IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 100 12

CES

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM100TJ-12F Trench Gate Design Six IGBTMOD™

100 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM100TJ-12F Units

Junction Temperature T Storage Temperature T Collector-Emitter Voltage (G-E SHORT) V Gate-Emitter Voltage (C-E SHORT) V Collector Current (Tc = 25°C) I Peak Collector Current (Tj ≤ 150°C) I Emitter Current (Tc = 25°C)** I Peak Emitter Current** I Maximum Collector Dissipation (Tj < 150°C) (Tc = 25°C) P

j

stg CES GES

C

CM

E

EM

c

-40 to 150 °C

-40 to 125 °C 600 Volts ±20 Volts 100 Amperes

200* Amperes

100 Amperes

200* Amperes

290 Watts

Mounting Torque, M5 Mounting – 31 in-lb Weight – 300 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

iso

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I Gate Leakage Current I Gate-Emitter Threshold Voltage V Collector-Emitter Saturation Voltage V

Total Gate Charge Q Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES GES

GE(th)

CE(sat)

G

EC

VCE = V VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 20 µA

GES

IC = 10mA, VCE = 10V 5 6 7 Volts

IC = 100A, VGE = 15V, Tj = 25°C– 1.6 2.2 Volts

IC = 100A, VGE = 15V, Tj = 125°C– 1.6 – Volts

VCC = 300V, IC = 100A, VGE = 15V – 620 – nC

IE = 100A, VGE = 0V – – 2.6 Volts

rating.

j(max)

2

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM100TJ-12F Trench Gate Design Six IGBTMOD™

100 Amperes/600 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Inductive Turn-on Delay Time t

d(on)

Load Rise Time t Switch Turn-off Delay Time t

d(off)

Times Fall Time t Diode Reverse Recovery Time** t Diode Reverse Recovery Charge** Q

ies oes res

r

f

rr

VCE = 10V, VGE = 0V – – 1.8 nf

VCC = 300V, – – 100 ns

IC = 100A, – – 80 ns

V

= V

GE1

= 15V, – – 300 ns

GE2

RG = 6.3⍀,––250 ns

Inductive Load – – 150 ns

Switching Operation – 1.9 – µC

––27nf

––1nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case Rth(j-c)'D Per FWDi 1/6 Module, Tc Reference – 0.37 – °C/W

Contact Thermal Resistance R

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

QPer IGBT 1/6 Module, Tc Reference – – 0.43 °C/W

th(j-c)

Point per Outline Drawing

DPer FWDi 1/6 Module, Tc Reference – – 0.70 °C/W

th(j-c)

Point per Outline drawing

'Q Per IGBT 1/6 Module, – 0.28 – °C/W

th(j-c)

Tc Reference Point Under Chip

th(c-f)

Per Module, Thermal Grease Applied – 0.13 – °C/W

3

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM100TJ-12F Trench Gate Design Six IGBTMOD™

100 Amperes/600 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

200

160

, (AMPERES)

C

120

Tj = 25

o

C

VGE = 20V

80

40

COLLECTOR CURRENT, I

0

01234

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

(TYPICAL)

7.5

15

11

10

9.5

9

8.5

8

Tj = 25°C

2

10

, (AMPERES)

E

1

10

EMITTER CURRENT, I

0

10

0 0.5 1.0 1.5 2.52.0 3.0

EMITTER-COLLECTOR VOLTAGE, V

REVERSE RECOVERY CHARACTERISTICS

2

10

I

rr

, (ns)

rr

REVERSE RECOVERY TIME, t

t

rr

1

10

0

10

1

10

(TYPICAL)

2

EMITTER CURRENT, IE, (AMPERES)

10

, (VOLTS)

EC

VCC = 300V V

= ±15V

GE

R

= 4.2 Ω

G

T

= 25°C

j

Inductive Load

SATURATION VOLTAGE CHARACTERISTICS

2.5

2.0

, (VOLTS)

CE(sat)

1.5

1.0

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE, V

0

2

10

, (nF)

res

1

, C

10

oes

, C

ies

0

10

CAPACITANCE, C

-1

10

2

10

20

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

10

8

4

GATE-EMITTER VOLTAGE, V

0

REVERSE RECOVERY CURRENT, I

10

3

10

0

COLLECTOR-EMITTER

(TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

04080120 160

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(TYPICAL)

CE

VGE = 0V

C

ies

C

oes

C

res

-1 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0

10

GATE CHARGE, V

1

10

GE

IC = 150A

VCC = 300V

VCC = 200V

400 800 16001200

0

GATE CHARGE, QG, (nC)

200

10

SATURATION VOLTAGE CHARACTERISTICS

5

4

, (VOLTS)

CE(sat)

3

COLLECTOR-EMITTER

(TYPICAL)

Tj = 25°C

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

048121620

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

VCC = 300V V

GE

R

= 6.3 Ω

G

T

= 125°C

j

2

Inductive Load

10

1

10

SWITCHING TIME, (ns)

0

10

2

0

10

COLLECTOR CURRENT, IC, (AMPERES)

IMPEDANCE CHARACTERISTICS

10-310

1

th(j-c)

10

R

th(j-c)

Under Chip = 0.28°C/W R

th(j-c)

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

10

= R

th

Per Unit Base

Z

Single Pulse T

= 25°C

C

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

(TYPICAL)

t

= ±15V

d(off)

t

d(on)

TRANSIENT THERMAL

(IGBT & FWDi)

-2

= 0.43°C/W (IGBT)

= 0.7°C/W (FWDi)

TIME, (s)

IC = 100A

IC = 40A

t

f

t

r

1

10

-1

10

-5

10

IC = 200A

0

10

-4

10

2

10

1

10

-1

10

-2

10

-3

10

-3

10

4

POWEREX CM100TJ-12F Datasheet

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Frequently Asked Questions

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