POWEREX CM100TF-28H Datasheet
CM100TF-28H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
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Outline Drawing and Circuit Diagram
Six-IGBT IGBTMOD™
H-Series Module
100 Amperes/1400 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ High Frequency Operation
□ Isolated Baseplate for Easy
CE(sat)
(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking
Dimensions Inches Millimeters
A 4.21 107.0
B 4.02 102.0
C 3.54±0.01 90.0±0.25
D 3.15±0.01 80.0±0.25
E1.57 40.0
F 1.38 35.0
G 1.28 32.5
H 1.26 Max. 32.0 Max
J 1.18 30.0
K 0.98 25.0
L 0.96 24.5
M 0.79 20.0
N 0.67 17.0
Dimensions Inches Millimeters
P 0.57 14.5
Q 0.55 14.0
R 0.47 12.0
S 0.43 11.0
T 0.39 10.0
U 0.33 8.5
V 0.30 7.5
W 0.24 Rad. Rad. 6.0
X 0.24 6.0
Y 0.22 5.5
Z M5 Metric M5
AA 0.08 2.0
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100TF-28H
is a 1400V (V
), 100 Ampere
CES
Six-IGBT IGBTMOD™ Power
Module.
Type Current Rating V
Amperes Volts (x 50)
CM 100 28
CES
355
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TF-28H
Six-IGBT IGBTMOD™ H-Series Module
100 Amperes/1400 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Characteristics Symbol CM100TF-28H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E-SHORT) V
Gate-Emitter Voltage (C-E-SHORT) V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Pulse Current I
Power Dissipation P
j
stg
CES
GES
C
CM
EC
ECM
d
Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M5 Mounting Screws – 17 in-lb
Module Weight (Typical) – 830 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to 150 °C
–40 to 125 °C
1400 Volts
±20 Volts
100 Amperes
200* Amperes
100 Amperes
200* Amperes
780 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 10mA, VCE = 10V 5.0 6.5 8.0 Volts
IC = 100A, VGE = 15V – 3.1 4.2** Volts
IC = 100A, VGE = 15V, Tj = 150°C – 2.95 – Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 800V, IC = 100A, VGS = 15V – 510 – nC
IE = 100A, V
= 0V – – 3.8 Volts
GS
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V, f = 1MHz – – 7 nF
VCC = 800V, IC = 100A, – – 400 ns
V
= V
GE1
= 15V, RG = 3.1Ω – – 300 ns
GE2
IE = 100A, diE/dt = –200A/µs – – 300 ns
IE = 100A, diE/dt = –200A/µs – 1.0 – µC
–– 20nF
– – 4 nF
– – 250 ns
– – 500 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Ther mal Grease Applied – – 0.025 °C/W
Per IGBT – – 0.16 °C/W
Per FWDi – – 0.35 °C/W
356
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