POWEREX CM100DY-24H Datasheet
CM100DY-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
H
C2E1
C
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.70 94.0
B 3.150±0.01 80.0±0.25
C 1.89 48.0
D 1.18 Max. 30.0 Max.
E 0.90 23.0
F 0.83 21.2
G 0.71 18.0
H 0.67 17.0
J 0.62 16.0
K
P - DIA. (2 TYP.)
J
D
Q
B
E
N
E
R - M5 THD (3 TYP.)
JJ
N
E2
Dimensions Inches Millimeters
H
S
C1E2
G1 E1 E2 G2
L
M
K 0.51 13.0
L 0.47 12.0
M 0.30 7.5
N 0.28 7.0
P 0.256 Dia. Dia. 6.5
Q 0.26 6.5
R M5 Metric M5
S 0.16 4.0
G
S
.110 TAB
F
G2
E2
C1
E1
G1
Dual IGBTMOD™
H-Series Module
100 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100DY-24H
is a 1200V (V
Dual IGBTMOD™ Power Module.
Type Current Rating V
CM 100 24
CE(sat)
(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking
), 100 Ampere
CES
Amperes Volts (x 50)
CES
261
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DY-24H
Dual IGBTMOD™ H-Series Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM100DY-24H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 270 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to 150 °C
–40 to 125 °C
1200 Volts
±20 Volts
100 Amperes
200* Amperes
100 Amperes
200* Amperes
780 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5
GES
µ
IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 100A, VGE = 15V – 2.5 3.4** Volts
A
IC = 100A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 600V, IC = 100A, VGS = 15V – 500 – nC
IE = 100A, VGS = 0V – – 3.5 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Turn-off Delay Time t
d(off)
Time Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V, f = 1MHz – – 7 nF
VCC = 600V, IC = 100A, – – 350 ns
V
= V
GE1
= 15V, RG = 3.1Ω – – 350 ns
GE2
IE = 100A, diE/dt = –200A/µs – – 250 ns
IE = 100A, diE/dt = –200A/µs – 0.74 –
– – 20 nF
– – 4 nF
– – 250 ns
– – 350 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.065 °C/W
Per IGBT – – 0.16 °C/W
Per FWDi – – 0.35 °C/W
262
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