POWEREX CM100DY-12H Datasheet
CM100DY-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
B
C
C2E1
FF
M
D
E2C2E1
N
(3 TYP.)
R
H
E
L
E2
K
C1
S - M5 THD
(3 TYP.)
R
H
Q - DIA.
(2 TYP.)
E2
J
E1
G1 G2
R
.110 TAB
P
G
G2
E2
C1
E1
G1
Dual IGBTMOD™
H-Series Module
100 Amperes/ 600 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ High Frequency Operation
□ Isolated Baseplate for Easy
CE(sat)
(70ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.70 94.0
B 3.150±0.01 80.0±0.25
C 1.57 40.0
D 1.34 34.0
E 1.22 Max. 31.0 Max.
F 0.90 23.0
G 0.85 21.5
H 0.79 20.0
J 0.71 18.0
Dimensions Inches Millimeters
K 0.67 17.0
L 0.63 16.0
M 0.51 13.0
N 0.47 12.0
P 0.28 7.0
Q 0.256 Dia. Dia. 6.5
R 0.16 4.0
S M5 Metric M5
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100DY-12H
is a 600V (V
), 100 Ampere
CES
Dual IGBTMOD™ Power Module.
Type Current Rating V
Amperes Volts (x 50)
CM 100 12
CES
233
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DY-12H
Dual IGBTMOD™ H-Series Module
100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM100DY-12H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 190 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to 150 °C
–40 to 125 °C
600 Volts
±20 Volts
100 Amperes
200* Amperes
100 Amperes
200* Amperes
400 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5
GES
µ
IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 100A, VGE = 15V – 2.1 2.8** Volts
A
IC = 100A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 300V, IC = 100A, VGS = 15V – 300 – nC
IE = 100A, VGS = 0V – – 2.8 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0, VCE = 10V, f = 1MHz – – 3.5 nF
VCC = 300V, IC = 100A, – – 120 ns
V
= V
GE1
= 15V, RG = 6.3Ω – – 300 ns
GE2
IE = 100A, diE/dt = –200A/µs – – 110 ns
IE = 100A, diE/dt = –200A/µs – 0.27 –
–– 10nF
– – 2 nF
– – 200 ns
– – 300 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.075 °C/W
Per IGBT – – 0.31 °C/W
Per FWDi – – 0.70 °C/W
234
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