POWEREX CM100DU-34KA Datasheet
CM100DU-34KA
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TC Measured Point
T - (4 TYP.)
G2
E2
E1
G1
C1
P
K
U
N
R
M
L
C1
H
J
H
G2
E2
E1
G1
F
G
E
B
S - NUTS
(3 TYP)
C
CM
C2E1 E2
K
C2E1
A
D
C
L
Q
Q
K
E2
Dual IGBTMOD™
KA-Series Module
100 Amperes/ 1700 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0
Dimensions Inches Millimeters
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
SM6 M6
T 0.26 Dia. 6.5 Dia.
U 0.02 0.5
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DU-34KA is
a 1700V (V
), 100 Ampere
CES
Dual IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 100 34
CES
1
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-34KA
Dual IGBTMOD™ KA-Series Module
100 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM100DU-34KA Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M6 Main Ter minal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
1700 Volts
±20 Volts
100 Amperes
200* Amperes
100 Amperes
200* Amperes
890 Watts
3500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 10mA, VCE = 10V 4.0 5.5 7.0 Volts
IC = 100A, VGE = 15V, Tj = 25°C– 3.2 4.0 Volts
IC = 100A, VGE = 15V, Tj = 125°C– 3.8 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
G
EC
VCC = 1000V, IC = 100A, VGE = 15V – 450 – nC
IE = 100A, VGE = 0V, Tj = 25°C– –4.6 Volts
IE = 100A, VGE = 0V, Tj = 125°C– 2.2 – Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Turn-off Delay Time t
d(off)
Times Fall Time t
Reverse Recovery Time t
Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VCE = 10V, VGE = 0V – – 2.4 nf
VCC = 1000V, IC = 100A, – – 350 ns
V
= V
GE1
= 15V, – – 150 ns
GE2
RG = 3.1⍀, Resistive – – 550 ns
Inductive Load – – 800 ns
Switching Operation – – 600 ns
IE = 100A – 5.8 – µC
––14.0 nf
––0.75 nf
2
2
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