POWEREX CM100DU-24H Datasheet

CM100DU-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

N

CM

C2E1 E2 C1

B

M

C

C2E1

A
D

Q - (2 PLACES)

P - NUTS

(3 PLACES)

K K

E2

E

E2 G2G1 E1

H

J

L

C1

F

G

F

R

G2
E2

E1
G1

Dual IGBTMOD™
U-Series Module

100 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recover y

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.7 94.0
B 1.89 48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.16 4.0
G 0.71 18.0
H 0.02 0.5

Dimensions Inches Millimeters

J 0.53 13.5
K 0.91 23.0
L 1.13 28.7

M 0.67 17.0
N0.287.0

P M5 M5

Q0.26 Dia. 6.5 Dia.
R 0.02 4.0

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM100DU-24H is a
1200V (V

), 100 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 100 24

CES

49

49

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM100DU-24H
Dual IGBTMOD™ U-Series Module

100 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM100DU-24H Units

Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
100 Amperes

200* Amperes

100 Amperes

200* Amperes

600 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 10mA, VCE = 10V 4.5 6 7.5 Volts

IC = 100A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts

IC = 100A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

G

EC

VCC = 600V, IC = 100A, VGE = 15V – 375 – nC

IE = 100A, VGE = 0V – – 3.2 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Tur n-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies
oes
res

d(on)

r

d(off)

f

rr

rr

VCE = 10V, VGE = 0V – – 5 nf

VCC = 600V, IC = 100A, – – 100 ns

V

= V

GE1

GE2

RG = 3.1V, Resistive – – 300 ns

Load Switching Operation – – 350 ns
IE = 100A, diE/dt = -200A/µs – – 300 ns
IE = 100A, diE/dt = -200A/µs – 0.55 – µC

= 15V, – – 200 ns

––15nf

––3nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

50

50

Q Per IGBT 1/2 Module – – 0.19 °C/W

th(j-c)

D Per FWDi 1/2 Module – – 0.35 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.035 – °C/W