POWEREX CM100BU-12H Datasheet

CM100BU-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

EEHR

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EuP

GuN
EuN

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U

C

D

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 2.83 72.0
B 2.17±0.01 55±0.25
C 3.58 91.0
D 2.91±0.01 74.0±0.25
E 0.43 11.0
F 0.79 20.0
G 0.69 17.5
H 0.75 19.1

J 0.39 10.0
K 0.41 10.5
L 0.05 1.25

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EuP

TC

Measured

Point

4 - M4 NUTS

P

N

A
B

GF

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EuN

U

V

J

J

EH

K

GF

VWV

X

GvP

EvP

V

GvN
EvN

Dimensions Inches Millimeters

M 0.74 18.7
N 0.02 0.5

P 1.55 39.3
Q 0.63 16.0
R 0.57 14.4

S 0.22 Dia. 5.5 Dia.

T 0.32 8.1
U 1.02 26.0

V 0.59 15.0
W 0.20 5.0

X 1.61 41.0

GvN
EvN

N

T

U

S 4 - Mounting
Holes

T

Measured

C

Point

0.110 - 0.5 Tab

L

M

P

Q

L

Four IGBTMOD™
U-Series Module

100 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of four IGBT Transistors in an
H-Bridge configuration, with each
transistor having a reverse-con­nected super-fast recovery free­wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM100BU-12H is a
600V (V
IGBT IGBTMOD™ Power Module.

Type Amperes Volts (x 50)

CM 100 12

CE(sat)

Free-Wheel Diode
Heat Sinking

), 100 Ampere Four-

CES

Current Rating V

CES

71

71

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM100BU-12H
Four IGBTMOD™ U-Series Module

100 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM100BU-12H Units

Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M4 Main Ter minal – 15 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 390 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
600 Volts
±20 Volts
100 Amperes

200* Amperes

100 Amperes

200* Amperes

400 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 10mA, VCE = 10V 4.5 6 7.5 Volts

IC = 100A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts

IC = 100A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

G

EC

VCC = 300V, IC = 100A, VGE = 15V – 200 – nC

IE = 100A, VGE = 0V – – 2.6 Volts

rating.

j(max)

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switch Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VCE = 10V, VGE = 0V – – 4.8 nf

VCC = 300V, IC = 100A, – – 100 ns

V

= V

GE1

= 15V, – – 250 ns

GE2

RG = 6.3V, Resistive – – 200 ns

Load Switching Operation – – 300 ns
IE = 100A, diE/dt = -200A/µs – – 160 ns
IE = 100A, diE/dt = -200A/µs – 0.24 – µC

– – 8.8 nf

– – 1.3 nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

72

72

Q Per IGBT 1/4 Module – – 0.31 °C/W

th(j-c)

D Per FWDi 1/4 Module – – 0.7 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.025 – °C/W