POWEREX CM1000HA-28H Datasheet
CM1000HA-28H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
B
E
E
H
U - M4 THD
(2 TYP.)
L
G
S - M8 THD
(2 TYP.)
C
NF
E
Dimensions Inches Millimeters
G
J
D
L 0.79 20.0
M 0.77 19.5
N 0.75 19.0
P 0.61 15.6
Q 0.51 13.0
R 0.35 9.0
S M8 Metric M8
T 0.26 Dia. Dia. 6.5
U M4 Metric M4
AB
C
R
K
P
M
C
T - DIA.
(4 TYP.)
E
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.12 130.0
B 4.33±0.01 110.0±0.25
C 1.840 46.75
D 1.73±0.04/0.02 44.0±1.0/0.5
E 1.46±0.04/0.02 37.0±1.0/0.5
F 1.42 36.0
G 1.25 31.8
H 1.18 30.0
J 1.10 28.0
K 1.08 27.5
E
G
Q
Single IGBTMOD™
H-Series Module
1000 Amperes/ 1400 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Ser vo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1000HA-28H is a 1400V
(V
CES
IGBTMOD™ Power Module.
Type Current Rating V
CM 1000 28
CE(sat)
(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking
), 1000 Ampere Single
CES
Amperes Volts (x 50)
215
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM1000HA-28H
Single IGBTMOD™ H-Series Module
1000 Amperes/1400 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM1000HA-28H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M8 Terminal Screws – 95 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Max. Mounting Torque M4 G-E Terminal Screws – 13 in-lb
Module Weight (Typical) – 1600 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to +150 °C
–40 to +125 °C
1400 Volts
±20 Volts
1000 Amperes
2000* Amperes
1000 Amperes
2000* Amperes
5800 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 2.0 mA
CES
, VCE = 0V – – 0.5
GES
µ
A
IC = 100mA, VCE = 10V 5.0 6.5 8.0 Volts
IC = 1000A, VGE = 15V – 3.1 4.5 Volts
IC = 1000A, VGE = 15V, Tj = 150°C – 3.1 – Volts
Total Gate Charge Q
Diode Forward Voltage V
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 800V, IC = 1000A, VGS = 15V – 5355 – nC
IE = 10000A, VGS = 0V – – 4.0 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V, f = 1MHz – – 70 nF
VCC = 800V, IC = 1000A, – – 2000 ns
V
= V
GE1
= 15V, RG = 3.3Ω – – 1200 ns
GE2
IE = 1000A, diE/dt = –2000A/µs – – 300 ns
IE = 1000A, diE/dt = –2000A/µs – 10.5 –
– – 200 nF
–– 40nF
––800ns
––650ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.018 °C/W
Per IGBT – – 0.022 °C/W
Per FWDi – – 0.050 °C/W
216
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