Powerex C444, C445 Data Sheet
IN
AOTION
SEMICONDUCTORS
The General Electric
signed for
power
C444
switching
and
C445 Silicon Controlled Rectifiers are de-
at
high frequencies. These are all-diffused Press-
Pak devices employing the field-proven interdigitated amplifying gate system.
FEATURES:
..
Interdigitated gate
structure
to
maximize high frequency current switching
capability.
Fully characterized for
..
High
di/dt
ratings.
..
High dv/dt capability
Guaranteed maximum
..
Rugged hermetic glazed ceramic package having 1" creepage path.
operation
with
turn-off
'"
~
w
~
'"
~
z
~
n:
::J
u
W
II-
'"
'?
z
0
'"
w
'"
u.
in inverter applications.
selections available.
time
2200
2000
1800
1600
1400
1200
!----
1000
800
600
400
200
with
selections available.
c--L
-
I
--
0-
SINUSOIDAL
180°
CONDUCTION
50%
65°C
vsw
5Jl.,
= vR =
.25jJF
t\
-~
WAVEFORM
DUTY CYCLE
CASE TEMP.
400V
SNUBBER
- -
f'....
t-
~oo
200
400
600
1000
2,000
4,000
10,000
20,000
FREQUENCY
- Hz
40,000
100,000
AMPLIFYING
GAT*
I
Equipment designers
" Choppers
" Inverters
" Regulated Power Supply
Uke
the Types C358, C385, C388, C395 and C398,
C~U1
use the C444/C445 SCR in demanding applications, such as:
" Sonar Transmitters
€I
UPS
" Induction Heaters
FOR SINE WAVE OPERATION
" Peak Current
" Frequency
the
C444/C445 SCR
" Cycloconverters
..
DC
to
" High
is
Rated For:
vs.
" Pulse Width
" Case Tempera lure
976
DC Converters
Frequency
MAXIMUM
ALLOWABLE RATINGS
C444/C445
TYPES
C444/C445A
C444/C445B
C444/C445C
C444/C445D
C444/C445E
C444/C445M
1 Half
sinewave
Peak One Cycle Surge
I2t
(for
et
(for
Critical Rate-of-Rise
Critical Rate-of-Rise
Average
Storage
Operating
Mounting
tdi/dt
ratings established
20
ohms gate trigger source with
waveform,
fusing)
fusing)
Temperature,
for
for
Gate
Power
Temperature,
Force
Required
times;;;'
times;;;'
of
of
Dissipation,
REPETITIVE
OFF-STATE
TJ = -40°C to +125°C
10
ms
max.
pulse width.
(Non-Repetitive)
1.5
milliseconds
8.3
milliseconds
On-State
On-State
T
stg
T
in
accordance with
Current,
Current,
PG(A
V)
.....................................................
......................................................
J
..............................................
O.51.ls
short circuit trigger current rise time.
PEAl<
VOLTAGE
V
ORM
100
Volts
200
300
400
500
600
On-State
..............................
..............................
Non-Repetitivet
Repetitivet
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EIA-NEMA
1
Current,
........................................
Standard RS-397, Section 5.2.2.6 for conditions
REPETITIVE
REVERSE
TJ = -40°C
[TSM
.............................
.....................................
VOLTAGE
V
RRM
to
100
200
300
400
500
600
PEAl<
+125°C
Volts
1
NON-REPETITIVE
REVERSE
190,000
600,000
3000
of
(RMS
(RMS
Lbs. +
13.3
max. rated
V
RSM
TJ
= +125°C
150
300
400
500
600
720
Ampere)2
Ampere)2
. AO°C
AO°C
500
KN +
PEAl<
VOLTAGE
Volts
12,000
Amperes
Seconds
Seconds
800
500
..
to
+lS0°C
to
+12SoC
Lbs. 0 Lbs.
2.2
KN
-OKN
VDRM;
20
1
A/ps
Alps
2 Watts
volts,
TEST
Repetitive
and
Repetitive
and
Thermal
Critical Rate-of-Rise
Off-State Voltage
values
switching)
I DC
DC
Peak
Off-State
Peak
Off-State
Resistance
may
Gate
Trigger
Gate
Trigger
Current
Current
cause device
Reverse
Reverse
of
(Higher
Current
Voltage
SYMBOL
IRRM
and
IDRM
IDRM
and
IDRM
R(jJC
dv/dt
i
lGT
V
GT
ISTICS
MIN.
-
-
-
200
Higher
minimum dv/dt selections available consult factory.
i I
-
- -
-
TYP.
20
MAX.
5 25 rnA
45
-
0.04
200
400
150
3.0
UNITS
DC/watt
-
V
I
mAde
rnA
/psec
Vdc
=
+25°C,
T
J
T
=
+l2SoC,
J
Junction-to-Case
T
=
+l25°C,
J
Rated,
linear
waveform.
Exponential
ITn
=
+2SoC, V
-,-
-40°C,
Tc
=
Tc = +125°C,
+2SoC
Tc
=
1
ohm
TEST
CONDITION
V = V
DRM
V = V
DRM
- Double-Side
Gate
Open.
or
exponential
dv/elt = V
= 10
D
V
=
10
D
V
=
10
D
to
+125°C,
= V
DRM
T
Vdc,
Vdc,
Vdc,
= V
V
DRM
(.632)
V
D
RRM
RRM
Cooled
=
RL = J
RL = 1
RL = 1
= 10
ohm
ohm
ohm
Vdc,
RL
--
=
- -
0.25
5.0
-
-
_40°C
Tc
=
1
ohm
Tc = 125°C,
to
V
+25°C,
DRM
, RL =
V
D
1000
= 10
ohms
Vdc,
RL
=
977
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