Powerex C397, C398 Data Sheet
1200
Volts,
650
ARMS
The General Electric
designed for power switching
Press-Pak devices employing
C397
and
C398
at
high frequencies. These are all-diffused
the
field-proven amplifying gate.
Silicon Controlled Rectifiers are
FEATURES:
..
Fully characterized for operation in inverter and chopper applications.
..
High di/dt ratings.
..
High dv/dt capability with selections available.
..
Rugged hermetic glazed ceramic package having 1" creepage path.
IMPORTANT: Mounting instructions
J400
1300
1200
1100
1000
900
800
-
700
600
f\J'L
SINtJ50IDAl
WAVEFORM
180"
CONOUCTION
400
300
200
100
f-
65"C
800
50%
I 1 1
--1
CASE
TEMPERATURE
VOLT
SWITCHING
DUTY CYCLE
.0.,
.20)Jf
5
.Q,.20)Jf
ZO
100
1-
S~UBBER
SNUBBER
FREQUENCY
IN
1000
1\
Hz
on
the
HIGH
\\
\,
\,
I\"
mounting clamp specifications
FR
\
u
"
10,000
CURRENT
at
100
~
90
it
~
BOO
~
70
~
600
r
~
50
~
400
"
~
~
300
~
g
200
~
10
0
0
01-
0
0
0
back
I-
l--f-
1-
of
this sheet must be followed.
I
-
---
-
J1n
RECTANGULAR
WAVEFORM
50%
DUTy
CYCLE
dl/d!' 5 AMPS
I""
e
6S
c CASE TEMPERATURE
800
VOU
SWITCHING
5.0.,
.Z)Jf
100
--
SEC
SNUBBER
--
1"--
1--
I-
r-
I-
FI'lEQUENCY
-
I'"
'\
~
---
---
-
1000
IN
Hz
~--
--
10,000
I
Equipment designers can use the C397/C398 SCR's in demanding applications, such as:
'"
Choppers
..
Inverters
..
Regulated Power Supplies
FOR SINEWAVE OPERATION
Uke
the
Type C140/141, C158/159 and C358 SCR's,
the C397/C398 SCR
..
Peak Current
..
Pulse Width
..
Frequency
..
Case
is
rated for:
vs.
Temperature
'"
Sonar Transmitters
'"
Induction Heaters
..
Radio Transmitters
958
..
Cycloconverters
..
DC
to
DC
Converters
..
High Frequency Lighting
FOR RECTANGULAR WAVE OPERATION
GE
now introduces a new, high-frequency rating for
the
C397/398 SCR, which is:
..
Peak Current
vs.
" di/dt
..
..
..
of
Leading Edge
Frequency
Duty Cycle
Case
Temperature
C397/C398
TYPES
C397/C39SE
C397/C39SM
C397/C39SS
C397/C39SN
C397/C39ST
C397/C39SP
C397/C39SPA
REPETITIVE
VOLTAGE,VDRMI
T
=
·40oC
J
1000 1000
1100
MAXIMUM
PEAK
OFF·STATE
to
+125°C
500 Volts 500 Volts
600 600 720
700 700
SOO
900 900
ALLOWABLE
REPETITIVE
C397/C39SPB 1200 1200
1 Half sinewave waveform, 10
Peak One Cycle Surge (Non·Repetitive) On·State Current, I
2
1
t (for fusing) for times;;;' 1.5 milliseconds
2
1
t (for fusing) for
Critical
Rate·of·Rise
Critical Rate·of·Rise
Average Gate Power Dissipation,
Storage Temperature, T
Operating Temperature, T
Mounting Force Required
ms
max. pulse width.
TSM
...............................
times;;;' S.3 milliseconds
of
On·State Current, Non·Repetitive
of
On·State Current, Repetitive. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PG(AV)
.....................................................
stg
..•.•...•..••••..•.•.•...•..•.•.••...•......•......
J
..............................
....................................
...................................................
.......................................................
RATINGS
PEAK
VOLTAGE,
T J =
·40oC
SOO
1100
.........•....••...•..•....•..
VRRMI
to
+125°C
REVERSE
NON·REPETITIVE
REVERSE
VOLTAGE,
T
=
J
125°C
PEAK
V
RSM
1
600 Volts
840
960
10
SO
1200
1300
1400
7500 Amperes
95,000 (RMS Ampere)2 Seconds
230,000 (RMS Ampere)2 Seconds
SOO
A/ps
..
500
A/ps
2
Watts
'.'
°
.
AO
• AO°C
2000
8.9
Cto
to
Lb.
KN
°c
+150
+12SoC
±
10%
±
10%
t
t
tdi/dt
ratings established in accordance
20
ohms gate trigger source with 0.5
with
IlS
EIA·NEMA Standard RS·397, Section 5.2.2.6 for conditions
short circuit current rise time.
of
max. rated VDRM; 20 volts,
C397/C398
CHARACTERISTICS
TEST
Repetitive Peak Reverse
and Off-State Current
Repetitive
and Off-State
Thermal
Critical Rate-of-Rise
Off-State Voltage (Higher
values
swit ching) T
DC
DC
Peak On-State Voltage V
Turn-On
Conventional
Commutated
Time
Voltage)
Peak
Reverse
Current
Resistance
of
may
cause device
Gate Trigger
Gate Trigger Voltage V
Delay Time
(with
Current
Circuit
Turn-Off
Reverse
C398
C397
SYMBOL
IRRM
and
IORM
IRRM
and
IORM
ROJe
dv/dt
IGT
GT
TM
td
tq
MIN.
-
-
- .05
Higher
-
-
-
-
-
0.15
-
-
TYP.
200
minimum dv/dt selections available - consult factory.
1.25 3.0
2.7 3.0 Volts
0.5
MAX.
5
20
500
50 150
75
15 125
3 5
-
20
45
.06
300
-
-
UNITS
rnA
rnA
DC/Watt
V
/psec
mAdc
Vdc
psec
/lsec
20
-
35
t
t (6)
TEST
=
+25°C
T
J
V = V
=
T
J
V = V
Junction-to-Case (DC) (Double-Side Cooled)
T
= 125°C, Gate
J
Linear
Exponential
Te
=
Te
=
Te = +125°C,
Tc = -40°C
RL
= 3
Tc = 25°C
RL = 3
Te
= 125°C,
Tc = +25°C,
Duty
Te
= +25°C,
Supply: 20 volt
psec
(1)
(2)
(3)
(4)
(5) Rate-of-rise
(7)
(8)
= V
ORM
125°C
ORM
or
+25°C,
-40°C,
Cycle ~ .01
max. rise
Te = +125°C
ITM = 500
V
R
VORM
voltage
Commutation
Repetition
Gate
RRM
=
VRRM
Exponential
dv/dt = VORM
Vo
Vo
Vo = 6Vdc,
to
25°C,
Ohms
to
+125°C,
Ohms
VORM,
ITM = 3000
ITM = 50
time.
Amps.
= 50
Volts
(Reapplied)
=
20 V /psec
rate = I pps.
bias during
open
of
o volts, 100
C398
C397
30
- 45
40
60
(1)
Te = +125°C
(2)
ITM = 500
(3)
(4)
(5) Rate-of-rise
(6)
(7)
(8)
=
50
VR
VORM
(Reapplied)
voltage
Commutation
Repetition
Gate bias during
=
Amps.
Volts Min.
of
200 V /psec
rate
o volts, 100
Conventional
Commutated
Time
(with
Diode)
tConsult factory
ttDelay time
tttCurrent
risetime
Circuit
Turn-Off
Feedback
C398
C397
for
may
specified maximum turn-off time.
increase significantly
as
measured
tq(diode)
as
\vith
the gate
a current probe, or
- 40
60
drive
approaches the IGT of the
voltage
psec
.1.
I
t
risetime across a non-inductive resistor.
(1)
Tc = +125°C
(2)
ITM = 500
(3)
V
= I
Volt
R
V
ORM
(Reapplied)
200
100
( 4)
(5)
Rate-of-rise
voltage =
(6)
Commutation
(7)
Repetition
(8) Gate bias during
o volts,
Device
Under Test.
Amps
ot
rate
CONDITION
Open.
V
=
ORM
Rising Waveform.
= 6
Vdc,
Rated,
(.632)
RL = 3 Ohms
= 6 Vdc, RL = 3 Ohms
RL = 3 Ohms
Vo
= 6 Vdc,
Vo = 6Vdc,
RL =
1000
Ohms
Amps
VORM.
20
Amps/psec
interval =
(linear)
Amps/psec
Peale
ohms, 0.1
%.
Pulse Width = I ms.
Adc,
circuit,
ti",
ttt
Min.
reapplied off-state
(linear)
di/dt
= 25
turn-off
ohms
reapplied off-state
di/dt
= 25
= I pps.
turn-off
ohms
reapplied off-state
V/psec
di/dt
(linear)
= 25
interval =
Amps/psec
= 1 pps.
turn-off
ohms
interval =
Gate
960
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