
HIGH SPEED
Silicon
Controlled
1200 Volts p
The General Electric C387 and C388 Silicon Controlled Rectifiers are
designed for
Press-Pak devices employing
FEATURES:
" Fully characterized for operation in inverter and chopper applications.
" High
" High
" Rugged hermetic glazed ceramic package having 1" creepage path.
IMPORTANT: Mounting instructions
di/dt
dv/dt
power
ratings.
switching
at
the
field-proven amplifying gate.
capability with selections available.
on
the
HIGH
high frequencies. These are all-diffused
mounting clamp specifications
FREOUENCY CURRENT
Rectifier
500
ARMS
must
be followed.
RATINGS
C387/C388
I
1000
Ul
w
a:
900
lr
"
I
800
'"
I-
Z
w
700
a:
a:
::J
u
600
w
~
~
z
0
'"
w
'"
a.
w
.J
OJ
~
S
.J
'"
500
400
300
200
100
0
1.
MAXIMUM
..f\JL
SINUSOIDAL
--
1111-
50%
leo·c
65·C
800
100
WAVEFORM
DUTY
CONDUCTION
CASE
VOLT
511,0.20pF
20l1
'j20(
Equipment designers can use the C387/C388 SCR in demanding applications, such as:
" Choppers " Sonar Transmitters " Cyc1oconverters
"
Inverters " Induction Heaters "
" Regulated Power Supplies " Radio Transmitters " High Frequency Lighting
FOR SINEWAVE
Like
the
Type
Cl40/141,C158/C159and
the C387/C388 SCR
" Peak Current
" Pulse Width
" Frequency
"
"
1\"-
I
CYCLE
TEMPERATURE
SWITCHING
SNUBBER
,\"
'\
:\
"
"-
'-
ITtl1
1000
FREOUENCY
ON-STATE CHARACTERISTICS
is
rated for:
vs.
Case
Temperature
IN
Hz
OPERATiON
C359
10,000
SCR's,
1000
900
~
iii
Ii'
BOO
?i
700
600
~
'"
500
~
~
400
I-
<
W
300
w
I-
al
200
I-
~
100
I-
2.
50%
di/dt'5
65°C
800
5!l,O.20)JF
I I
GATE TRIGGER CHARACTERISTICS
r--
--
DUTY CYCLE
A/j.LSEC
CASE TEMPERATURE
VOLT SWITCHING
SNUBBER
100
POWER
DC
FOR
RECTANGULAR
GE
now
introduces a new, high-frequency rating for
C387/C388 SCR, which is:
" Peak Current
vs.
" di/dt
"
"
"
of
Frequency
Duty
Cycle
Case
Temperature
III
~i/di
fLIL
RECTANGULAR WAVEFORM
-..
'i.J.
II
!".
'"
'"
III
FREOUENCY
1000
IN
HZ
RATINGS
to
DC
Converters
WAVE OPERATION
Leading Edge
I I I I
10,000
AND
928

C387/C388
MAXIMUM
REPETITIVE
TYPES
T
C387/C388E
C387/C388M
C387/C388S
C387/C388N
C387/C388T
C387/C388P
C387/C388PA
C387/C388PB
1 Half sinewave waveform,
Peak One Cycle
2
1
t (for fusing) for times;;;' 1.5 milliseconds
10
ms max. pulse width.
Surge
(Non-Repetitive) On-State Current, I
PEAK
VOLTAGE,
J =
_<woe
500
600 600
700 700 840
800
900
1000 1000 1200
1100 1100 1300
1200 1200 1400
12t (for fusing) for times;;;' 8.3 milliseconds
Critical
Critical Rate-of-Rise
Average Gate Power Dissipation,
Storage Temperature, Tstg
Operating Temperature, T
Mounting Force Required
Rate-of-Rise
of
On-State Current, Non-Repetitive
of
On-State Current, Repetitive. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PG(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
......................................................
.•...••..•.••...••..••.........................•.....
J
.......................................................
OFF-STATE
VDRM
to
+125°C
ALLOWABLE
1
REPETITIVE
RATINGS
VOLTAGE,
T J =
-40°C
PEAK
VRRMI
to
REVERSE
+125°C
NON-REPETITIVE
REVERSE
VOLTAGE,
T
=
J
+125°C
Volts 500 Volts 600 Volts
720
800 960
1080
5500 Amperes
.......•...................••.
TSM
...............................
..............................
900
50,000 (RMS Ampere)2 Seconds
120,000 (RMS Ampere)2 Seconds
....................................
..
°
-40 C
: -40°C
2000 Lb. ±
8.9
PEAK
V
1
RSM
800 A/ps t
500 A/ps t
..
2 Watts
to
+150
2S
to
+1
10%
KN ± 10%
°c
oC
tdi/dt
ratings established in
20
ohms
gate trigger source
accordance
with
0.5 }.lS
with EIA-NEMA
short
circuit trigger current rise time.
Standard
RS-397,
929
Section
5.2.2.6
for
conditions
of
max.
rated
VDRM; 20 volts,

I
C387/C388 I
TEST
Repetitive
and Off-State
Repetitive Peak Reverse
and Off-State
Thermal
Critical Rate-of-Rise
Off-State Voltage (Higher
values may cause device
switching) T
Holding Current
DC Gate Trigger
DC Gate Trigger Voltage
Peak On-State Voltage
Tum-On
Conventional Circuit
Commutated
Time
Voltage)
Conventional Circuit
Commutated
Time
Diode)
I
tConsult factory for specified
H
Delay
Hi"
Current risetime
Peak Reverse
Resistance
Delay Time
(with
Reverse
C388
C387
C388
C387
(with
Feedback
C388
C387
time
may
Current
Current
of
Current
Tum-Off
Tum-Off
increase significantly
as
measured with a current probe,
SYMBOL
IRRM
and
IORM
IRRM
and
IORM
ReJc
dv/dt
Higher
IH
IGT
V
GT
V
TM
td
tq
tq(diode)
maXImum
as
CHARACTERISTICS
MIN.
-
-
-
200
-
-
-
-
-
- 1.25 3.0
0.15
-
TYP.
.05
500
minimum dv/dt selections available - consult factory.
75
15 125
- -
3.3
-
-
-
0.5
MAX.
5 20
20
.06
200
50
3 5
15
20
500
150
300
4.2
UNITS
mA
45
-
-
t
t (6)
mA T
DC/Watt
V //lsec
mAdc
mAdc
Vdc
Volts T c =
/lsec
/lsec
T
V
V
Junction-to-Case
T J
Linear
Exponential
Tc
Initial
Tc
Tc
Tc = +125°C,
Tc = -40°C
RL = 3
Tc = o°c
RL
Tc
Duty
Tc
Supply:
/lsec
(1)
(2)
(3)
(4)
(5)
(7)
==
J
==
==
J
==
==
==
=
=
= 3
= 125°C, VORM, RL
==
Tc = +125°C
ITM
VR = 50
V
Voltage = 20 V//lsec (linear)
Commutation
(8)
o Volts,
-
-
- 30
-
turn-off time.
the gate drive approaches the IGT
20
25
40
or
30
40
t
i"
voltage risetime across a non-inductive resistor.
/lsec
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(1)
(2)
(3)
(4)
(5) Rate-of-Rise
(6)
(7)
(8)
of
the
Device
TEST
+25°C
V
==
ORM
125°C
VORM = VRRM
+
+25°C,
+25°C,
Cycle ~ .01%
+25°C,
max.
ORM
Rate-of-Rise
Repetition
Gate
Tc = +125°C
ITM = 500
VR
V
ORM
Rate-of-Rise
Voltage =
Commutation
Repetition
Gate
o Volts,
Tc
ITM
VR
V
ORM
Voltage
Commutation
Repetition
Gate Bias During
o Volts,
VRRM
125°C,
On-State
Gate Open. V
or
Exponential
dv/dt
Anode
+25°C,
AO°C,
to
Ohms
to
+125°C,
Ohms
ITM = 3000
ITM
20 volt
rise
==
500
Volts
(Reapplied)
Bias During
100
==
50 Volts Min.
(Reapplied)
Bias During
100
==
+125°C
==
500
= 1 Volt
(Reapplied)
==
100
Under Test.
(Double-Side
==
Current
Vo
= 6 Vdc, RL = 3
Vo
= 6 Vdc, RL = 3
Vo
==
o°c,
==
open
time.
Amps.
of
di/dt
Rate
Ohms.
Amps
of
200
di/dt
Rate
Ohms
Amps.
of
200
di/dt
Rate
Ohms
CONDITION
Cooled)
==
==
24
Vdc,
6 Vdc,
Ohms
Peak
ORM
ohm,
Off-State
Interval
Interval
Interval
Rated
Ohms
Ohms
Ohms
'
ORM
Rising Waveform.
VORM
(.632)
Supply
==
2 Amps.
6Vdc,
RL = 3
Vo = 6Vdc,
Vo
==
==
1000
Amps
50
Adc, V
circuit, 20
ti",
ttt
Min.
Reapplied
= 25 Amps//lsec
= 1 pps.
Tum-Off
Reapplied Off-State
V//lsec (linear)
= 25 Amps//lsec
= 1 pps.
Tum-Off
Reapplied Off-State
V//lsec (linear)
= 25 Amps//lsec
==
1 pps.
Turn-Off
Gate
0.1
==
=
=
930

C387/C388
If)
w
0:
W
"-
:;:
<I
I
I-
2
W
a:
a:
::>
u
w
~
'?
2
0
<I
'"
W
"-
1000
900
800
700
600
500
400
300
200
100
r-
I-F-.
-
6.
MAXIMUM
DUTY
PULS~S
---
---
10
RATE
OF
RISE
OF
AllOWABLE
CURRENT
RECTANGULAR WAVE CURRENT RATING
CYCLE -
PER
-
r---
......
ON-STATE
VS.
di/dt
50%
I I
SECOND
i--
I-
-
r-
-1-1--
-
CURIaENT
-(AlfLSECI
PEAK ON-STATE
(TC
= 65°C)
100
60
400
1000
2500
1000
900
800
If)
w
700
a:
w
600
"-
:;:
<I
-
-
500
I
I-
2
w
400
a:
0:
::>
u
300
w
ti'
I-
'?
200
2
0
<I
'"
w
"-
100
-
--
r--.
.....
~I'-
8.
MAXIMUM
DATA
DUTY
CYCLE -
PULSES P
_
----
r---.
~
10
RATE
OF
RISE
ALLOWABLE
CURRENT
25%
.1
ERsECO
_t-!D
r-
--
-........
--
'-
OF
ON-STATE CURRENT
VS.
di/dt
60
1-
....
--
....
PEAK ON-STATE
(TC
= 65°C)
...
-(A/fLSECI
400
1000
2500
100
-
If)
w
a:
w
"-
:;:
<I
I-
2
w
a:
a:
::>
u
w
l-
t'!
If)
2
0
<I
'"
W
"-
I
1000
900
BOO
700
600
500
I--
400
300
200
100
-
PULSEs P
--
7.
MAXIMUM
NOTES:
(Pertaining
~ND
10
RATE
CURRENT
1. Switching voltage
2. Reverse voltage
3. Required gate drive:
20
amps/f,lsec.
20
100
OF
RISE
AllOWABLE
VS.
to
Sine
and
volts,
65
volts,
20
amps/f,lsec.
OF
ON-STATE CURRENT-(A/fLSECI
PEAK ON-STATE
di/dt
(TC
= 90°C)
Rectangular
~
800
applied = VR ~ 800V.
ohms, 1 f,lsec
ohms,
.5
or
Wave
volts.
risetime for less
f,lsec
risetime
60
400
1000
100
Current
for
greater
Ratings)
than
100
than
I
I
1000
900
If)
BOO
w
0:
W
"-
:;:
<I
I
I-
2
w
0:
a:
::>
u
w
l-
t'!
If)
Z
0
<I
'"
w
"-
4. RC
5. Double-Side Cooled.
5. Max. energy dissipated during reverse recovery
700
I--
600
500
400
300
200
100
Snubber
15% of
is
least.
r-!PUL '.1
I-
I-F-.
-
I-
-
9.
MAXIMUM
ckt. = .2
total
W-S/P
SEs
PCR
~ND
--=
......
10
RATE
OF
CURRENT
f,lf,
shown
.1
r--
-
--....
--
--
RISE
OF
ON-STATE CURRENT-(A/fLSECI
ALLOWABLE
VS.
di/dt
5.11
or
0.03
W-S/P whichever
F-.
......
r-
PEAK ON-STATE
(Tc
-
-1'-
...
= 90°C)
to
be
60
400
1000
100
932

C387/C388
004,000
w
0::
w
a.
::;;
«
2,000
I
I-
Z
W
~
1,000
::>
u
w
t:i
I-
500
00
I
Z
o
00
::>
o
w
200
z
«
I-
z
«
I-
00
100
Z 0
13.
MAXIMUM
:
T
125
J
INSTANTANEOUS
ON-STATE CHARACTERISTICS
~
;(
/
11
! I
I I
I
I
0
cL
TJ:
25°C
I
2 4
ON-STATE
VOLTAGE - VOLTS
V
5
00
~
§;
I
W
(.!)
<!
---
~IO
o
>
w
t:i
(.!)
U)
'/
::>
o
w
Z
«
I-
Z
~
00
~
I
.1
U)
W
0::
w
~6,000
<!
I-
~
~5,000
0::
0::
:::J
t)
~4,000
~
U)
~
w
~3,000
3:
w
2:
iii
LL
..J
<!
:r:
:.:
T
WS
1,000
Q. I
/
1
14.
/'
,/
"
"
<
r:?
I'.,
"
-40°C
_25°C
/
~
r""'"
j::
INSTANTANEOUS GATE CURRENT - AMPERES
GATE
TRIGGER
POWER RATINGS
--....
~
.......
r-
INITIAL
2
NUMBER
TJ : -40°C
4 6 8
OF
"
~
~1!4+
~
">
1:'
;0 • /,
...
CHARACTERISTICS
r-.""""
"
CYCLES
<"6'
"II-
/,
6'11
0
's<
-_U'~C'
01i<1,,;--
U'~
oS'-
C'IX
11.q-l:"
............
THE LOCUS
-
TRIGGER POINTS LIES OUTSIDE
THE BOUNDARIES
VARIOUS
\T20V,
20p
--.......
TO
+125°C
10
AT
"'0 0
{O~
{O
/0,1
-«oS'
l-«oS'
";-. .
II-.q"
J~C'
oS'
~
~C'
oS'
<1-/-
11.q
r-'~
...
"
.
II-
I
'<2
<1"
--Y
"-
"l
0
00
-«&;-.
"oS'
<1-/--....
.
......
-
OF
POSSIBLE
CASE TEMPERATURES.
LO~DLI~E
r---.
20
60Hz
SHOWN
I I
AND
""'-
DC
AT
III
10
r-.
""'"
40
60
t)
w
U)
'"
NO:
~~
(J)
::Ii
1;
NOTES:
1.
2.
200,000
150,000
100,000
80,000
60,000
40,000
15,000
10,000
8,000
6,000
4,000
The
locus
boundaries
20V -20n
rate
of
circuit
rate
of
current
0.5
I1S
max.
anode
di/dt
source.
I
of
possible
shown
is
the
risetime)
~
1.5
dc
trigger
at
various case
minimum
current
rise>
500
rise>
200
Maximum
amps/l1s
gate
amps/l1s
.--
~
INITIAL
TJ
2 4
PULSE BASE WIDTH -
points
temperatures.
source
100
amps/l1s
(Tp ~ 5
long
with
20V -20n
~
:
-40°C
lie
outside
load line when
or
anode
I1S
term
min.,
repetitive
gate
~
-
TO
+125°C
mSEC
the
6
-
...
"""""
~
8
10
15. SURGE (NON-REPETITIVE) ON-STATE
CURRENT
934
16. SUB-CYCLE SURGE (NON-REPETITIVE)
ON-STATE
CURRENT
AND
2
1
t RATING

1
(J)
In
::e
o
..J
15
100
u
::I..
G
ILl
II:
a::
CI
uS
(!)
0:
<l:
I
U
o
W
0:
W
>
o
u
w
0:
I
IIII1
SINE
FOR
.
dl/dt
=
PULSE
vJt
i?'V/
~
tlo-+-~
10
10
WAVE
7T
ITM
I
WIDTH
V
.....
~
V
REVERSE
~
~
.-
17
~
i-""
i-'
i-'
""j..
"'"
1""'10-
di
Idt
V-
j..
b'
t--
l--
100
- A/j.LSEC
~
_
I~M
I
1600A
I
SOOA
4°iA
2°fA
100A
I
50A
1000
17.
TYPICAL
CHARGE (T
SINEWAVE
WAVEFORM
C387/C388
RECOVERED
= 125°C)
J
CURRENT
s
"-
u
0
w
u
Z
<l:
0
W
Q.
~
..J
<l:
::;:
0:
w
I
lI-
Z
w
Ui
Z
<l:
0:
I-
.00
.000
.0001
I--
V
V
.0
I
l7
18.
TRANSIENT
IMPEDANCE JUNCTION-TO-CASE
THERMAL
.v
V
/'
I
I
.001
.01
TIME
- SECONDS
H
1.000
N
CR~~AGE
t
T=
LENGTH
OF
STRAIGHT LEAD
DOUBLE SIDE COOLING
OUTLINE
DRAWING
~
10
SYM
A
B
C
D
E
F
~
H
J
K
L
M
N
P
Q
R
S
T
U
DECIMAL
INCHES
MIN. MAX.
.
240
.110
.245
.186
.060
-_.
2.200
.011 .019
.030
.056
1.000
.030
.130
1.300
.140
12.200
.137
.260
.130
.191
.075
1.430
1.065
2.500
130
.06e
1.065
.096
150
1.345
2.150
160
12.360
153
METRIC
M.M.
MIN.
6.096
2.794
6.223
4.724
1.524
55.BB
2.794
.762
1.422 1.524
25.40
.762
3.302
33.02
3.556
309.9
3.480
MAX
6.604
3.302
4.851
1.905
36.32
27.051
63.50
3.483
3.302
27.05
2.438
3.810
34.16
54.61
4.064
313.9
3.886
.
935