Powerex C387, C388 Data Sheet

HIGH SPEED

Silicon

Controlled

1200 Volts p

The General Electric C387 and C388 Silicon Controlled Rectifiers are designed for Press-Pak devices employing

FEATURES:

" Fully characterized for operation in inverter and chopper applications. " High " High

" Rugged hermetic glazed ceramic package having 1" creepage path.

IMPORTANT: Mounting instructions

di/dt dv/dt

power

ratings.

switching

at

the

field-proven amplifying gate.

capability with selections available.

on

the

HIGH

high frequencies. These are all-diffused

mounting clamp specifications

FREOUENCY CURRENT

Rectifier

500

ARMS

must

be followed.

RATINGS

C387/C388

I

1000

Ul

w

a:

900

lr

"

I

800

'"

I-

Z

w

700

a:

::J

u

600

w

~

z

0

'"

w

'"

a.

w

.J

OJ

~

S

.J

'"

500

400

300

200

100

0

1.

MAXIMUM

..f\JL

SINUSOIDAL

--

1111-

50% leo·c 65·C 800

100

WAVEFORM

DUTY

CONDUCTION

CASE

VOLT

511,0.20pF

20l1

'j20(

Equipment designers can use the C387/C388 SCR in demanding applications, such as:

" Choppers " Sonar Transmitters " Cyc1oconverters "

Inverters " Induction Heaters "

" Regulated Power Supplies " Radio Transmitters " High Frequency Lighting

FOR SINEWAVE

Like

the

Type

Cl40/141,C158/C159and

the C387/C388 SCR

" Peak Current

" Pulse Width " Frequency

"

1\"-

I

CYCLE

TEMPERATURE

SWITCHING

SNUBBER

,\"

'\

:\

"

"-

'-

ITtl1

1000

FREOUENCY

ON-STATE CHARACTERISTICS

is

rated for:

vs.

Case

Temperature

IN

Hz

OPERATiON

C359

10,000

SCR's,

1000

900

~

iii

Ii'

BOO

?i

700

600

~

'"

500

~

400

I-

<

W

300

w

I-

al

200

I-

~

100

I-

2.

50%

di/dt'5

65°C 800 5!l,O.20)JF

I I

GATE TRIGGER CHARACTERISTICS

r--

--

DUTY CYCLE

A/j.LSEC

CASE TEMPERATURE

VOLT SWITCHING

SNUBBER

100

POWER

DC

FOR

RECTANGULAR

GE

now

introduces a new, high-frequency rating for

C387/C388 SCR, which is:

" Peak Current

vs. " di/dt " " "

of Frequency Duty

Cycle

Case

Temperature

III

~i/di

fLIL

RECTANGULAR WAVEFORM

-..

'i.J.

II

!".

'"

III

FREOUENCY

1000

IN

HZ

RATINGS

to

DC

Converters

WAVE OPERATION

Leading Edge

I I I I

10,000

AND

928

C387/C388

MAXIMUM

REPETITIVE

TYPES

T

C387/C388E

C387/C388M C387/C388S C387/C388N C387/C388T C387/C388P C387/C388PA C387/C388PB

1 Half sinewave waveform,

Peak One Cycle

2

1

t (for fusing) for times;;;' 1.5 milliseconds

10

ms max. pulse width.

Surge

(Non-Repetitive) On-State Current, I

PEAK

VOLTAGE,

J =

_<woe

500 600 600 700 700 840

800

900 1000 1000 1200 1100 1100 1300 1200 1200 1400

12t (for fusing) for times;;;' 8.3 milliseconds Critical Critical Rate-of-Rise Average Gate Power Dissipation, Storage Temperature, Tstg Operating Temperature, T Mounting Force Required

Rate-of-Rise

of

On-State Current, Non-Repetitive

of

On-State Current, Repetitive. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

PG(AV)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

......................................................

.•...••..•.••...••..••.........................•.....

J

.......................................................

OFF-STATE

VDRM

to

+125°C

ALLOWABLE

1

REPETITIVE

RATINGS

VOLTAGE,

T J =

-40°C

PEAK

VRRMI

to

REVERSE

+125°C

NON-REPETITIVE

REVERSE

VOLTAGE,

T

=

J

+125°C

Volts 500 Volts 600 Volts

720

800 960

1080

5500 Amperes

.......•...................••.

TSM

...............................

..............................

900

50,000 (RMS Ampere)2 Seconds

120,000 (RMS Ampere)2 Seconds

....................................

..

°

-40 C

: -40°C

2000 Lb. ±

8.9

PEAK

V

1

RSM

800 A/ps t 500 A/ps t

..

2 Watts

to

+150

2S

to

+1

10%

KN ± 10%

°c

oC

tdi/dt

ratings established in

20

ohms

gate trigger source

accordance

with

0.5 }.lS

with EIA-NEMA

short

circuit trigger current rise time.

Standard

RS-397,

929

Section

5.2.2.6

for

conditions

of

max.

rated

VDRM; 20 volts,

I

C387/C388 I

TEST

Repetitive and Off-State

Repetitive Peak Reverse

and Off-State

Thermal

Critical Rate-of-Rise Off-State Voltage (Higher values may cause device switching) T

Holding Current

DC Gate Trigger

DC Gate Trigger Voltage

Peak On-State Voltage

Tum-On

Conventional Circuit Commutated Time Voltage)

Conventional Circuit Commutated Time Diode)

I

tConsult factory for specified

H

Delay

Hi"

Current risetime

Peak Reverse

Resistance

Delay Time

(with

Reverse

C388 C387

(with

Feedback

C388 C387

time

may

Current

of

Current

Tum-Off

increase significantly as

measured with a current probe,

SYMBOL

IRRM

and

IORM IRRM

and

IORM

ReJc

dv/dt

Higher

IH

IGT

V

GT

V

TM

td

tq

tq(diode)

maXImum

as

CHARACTERISTICS

MIN.

-

200

-

- 1.25 3.0

0.15

-

TYP.

.05

500

minimum dv/dt selections available - consult factory.

75 15 125

- -

3.3

-

0.5

MAX.

5 20

20

.06

200

50

3 5

15

20

500

150 300

4.2

UNITS

mA

45

-

t t (6)

mA T

DC/Watt

V //lsec

mAdc

Vdc

Volts T c =

/lsec

T

V

V Junction-to-Case T J

Linear Exponential

Tc

Initial

Tc

Tc Tc = +125°C,

Tc = -40°C RL = 3

Tc = o°c RL

Tc

Duty Tc

Supply: /lsec

(1)

(2) (3) (4) (5)

(7)

==

J

==

J

==

= =

= 3

= 125°C, VORM, RL

==

Tc = +125°C ITM

VR = 50 V

Voltage = 20 V//lsec (linear) Commutation

(8)

o Volts,

-

- 30

-

turn-off time.

the gate drive approaches the IGT

20

25

40

or

30 40

t

i"

voltage risetime across a non-inductive resistor.

/lsec

(1)

(2) (3) (4) (5)

(6) (7) (8)

(1)

(2)

(3) (4) (5) Rate-of-Rise

(6) (7) (8)

of

the

Device

TEST

+25°C

V

==

ORM

125°C

VORM = VRRM

+

+25°C,

Cycle ~ .01%

+25°C,

max.

ORM

Rate-of-Rise

Repetition Gate

Tc = +125°C ITM = 500 VR V

ORM

Rate-of-Rise

Voltage =

Commutation

Repetition Gate o Volts,

Tc

ITM

VR

V

ORM

Voltage

Commutation

Repetition Gate Bias During o Volts,

VRRM

125°C,

On-State

Gate Open. V

or

Exponential

dv/dt

Anode

+25°C,

AO°C,

to

Ohms

to

+125°C,

Ohms

ITM = 3000

ITM

20 volt

rise

==

500

Volts

(Reapplied)

Bias During

100

==

50 Volts Min.

(Reapplied)

Bias During

100

==

+125°C

==

500

= 1 Volt

(Reapplied)

==

100

Under Test.

(Double-Side

==

Current

Vo

= 6 Vdc, RL = 3

Vo

= 6 Vdc, RL = 3

Vo

==

o°c,

==

open

time.

Amps.

of

di/dt

Rate

Ohms.

Amps

of

200

di/dt

Rate

Ohms

Amps.

of

200

di/dt

Rate

Ohms

CONDITION

Cooled)

==

24

Vdc,

6 Vdc,

Ohms

Peak

ORM

ohm,

Off-State

Interval

Rated

Ohms Ohms Ohms

'

ORM

Rising Waveform.

VORM

(.632)

Supply

==

2 Amps.

6Vdc,

RL = 3

Vo = 6Vdc,

Vo

==

1000

Amps

50

Adc, V

circuit, 20

ti",

ttt

Min.

Reapplied

= 25 Amps//lsec

= 1 pps.

Tum-Off

Reapplied Off-State

V//lsec (linear)

= 25 Amps//lsec

= 1 pps.

Tum-Off

Reapplied Off-State

V//lsec (linear)

= 25 Amps//lsec

==

1 pps.

Turn-Off

Gate

0.1

==

=

930

Powerex C387, C388 Data Sheet

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