Powerex C365 Data Sheet
HIGH SPEED
Silicon
600
Volts
The General Electric
signed
Pak
FEATURES:
for
power
devices employing
" Fully characterized for operation in inverter and chopper applications.
to
High di/dt ratings.
..
High dv/dt capability with selections available.
to
Rugged hermetic glazed ceramic package.
TYPES
C364/C36SA
C364/C36SB
C364/C36SC
C364/C36SD
C364/C36SE
C364/C36SM
C36SS
C36SN 800 800
C364
switching
the
REPETITIVE
and C365 Silicon Controlled Rectifiers are de-
at
high frequencies. These are all-diffused Press-
field-proven amplifying gate.
MAXIMUM
PEAK
VOLTAGE,
T J =
-40°C
100
200
300
400 400
SOO
600
700
OFF-STATE
VDRMI
to
+125°C
Volts
Controlled
ALLOWABLE
REPETITIVE
VOLTAGE,
T J =
Rectifier
275
ARMS
RATINGS
PEAK
REVERSE
VRRMI
-40°C
to
+125°C
100 Volts
200
300
SOO
600
700
C364/C365
AM""Y'NG
NON-REPETITIVE
REVERSE
VOLTAGE,
T
J
200 Volts
300
400
SOO
600
720
840
960
GATe
=
+125°C
~
PEAK
1
VRSM
I
1 Half sinewave waveform, 10
RMS On-State Current,
Peak One Cycle Surge (Non-Repetitive) On-State Current,
Peak One Cycle Surge (Non-Repetitive) On-State Current, I
12t (for fusing) for times;;;' 1.S milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I2t
(for
fusing) for times;;;' 8.3 milliseconds
Critical Rate-of-Rise
Critical Rate-of-Rise
Average Gate Power Dissipation,
Storage Temperature,
Operating Temperature, T
Mounting Force Required
tdijdt
ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions
20
ohms
gate trigger source with 0.5!1s short circuit trigger current rise time.
ms
max. pulse width.
IT(RMS)'
of
On-State Current, Non-Repetitive
of
On-State Current, Repetitive. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
stg
J
....................................................
ITSM
TSM
...............................
......
PG(A
V)
•.............•..............•...•...............•.
......................................................
••.••••.••..•••.••.••••••.•.••..•••••......••••••.•.••
........................................................
(60 Hz)
(SO
........................
Hz)
........................
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
906
..
9,SOO
(RMS Ampere)2 Seconds
13,SOO
(RMS Ampere)2 Seconds
_40°C
_40°C
of
max. rated VDRM; 20 volts,
27S Amperes
1800 Amperes
1700 Amperes
..
800 A/ps
..
SOO
A/ps
2 Watts
to
+IS0°C
2S
to
+l
800
Lbs. ±
3.S6 KN ±
"I
"I
oC
10%
10%
TEST
Repetitive
and
Repetitive
and
Thermal
Critical Rate-of-Rise
Off-State
(Higher values
device switching)
Holding
DC
DC
Peak On-State Voltage V
Turn-On
Conventional
Commutated
Time
Voltage)
Faster
Off
Consult
Conventional
Commutated
Time
Diode)
Peak Reverse
Off-State CUlTent
Peak
Reverse
Off-State
Gate
Gate
(with
Times Available,
(with
Current
Resistance
Voltage
may
Current
Trigger
Trigger Voltage
Delay
Maximum
Factory
Current
Time
Circuit
Turn-Off
Reverse
Turn-
Circuit
Turn-Off
Feedback
of
cause
SYMBOL
IRRM
IDRM
IRRM
IDRM
tq(diode)
CHARACTERISTICS
MIN.
-
and
-
and
ROJe
dv/dt
IH
IGT
V
GT
TM
td
tq
C364
C36S
C364
C36S 20
200
Higher
minimum dv/dt selections available - consult factory.
-
-
-
-
-
0.15
-
-
-
TYP.
S 12 rnA TJ = +2SoC
12 17 rnA
.12 .13S
.IS
sao
40
70 2S0
100
2S
3 S
1.2S 3.0
-
1.9
O.S
IS 20
IS
I C364/C365
MAX.
.26
-
1000
400
17S
-
2.6
-
8
10
t
J.
I
UNITS
DC/Watt
V
/Msec
mAdc
mAdc
Vdc
Volts
Msec
Msec
Msec
TEST
V =
VDRM = VRRM
= 12SoC
T
J
V = V
Junction-to-Case
Junction-to-Case
T J = + 12SoC,
Linear
Exponential
Te
= +2SoC,
Initial
Te
=
~
Ie
=
Te
= +12SoC, VD =
Te = -40°C
RL = 3
Te = O°c
RL = 3
Te
= 12SoC,
Te
= +2SoC,
Duty
T e = +2SoC,
Supply:
0.1
Msec
(1)
Te
(2)
ITM = ISO
(3)
V
(4)
V
(S) Rate-of-Rise
Voltage
(6)
Commutation
(7)
Repetition
(8)
Gate
a Volts, lOa
(1)
Te
(2)
ITlV!
(3)
VR
(4)
V])f{M
(S) Rate-of-Rise
Blocking Voltage =
(6)
Commutation
(7)
Repetition
Gate
(8)
a Volts, lOa Ohms.
= V
DRM
Gate
or
Exponential
dv/dt
Anode
On-State
+2SoC, V
-40°C, V D = 6 Vdc, RL = 3
to
Ohms
to
+l2SoC,
Ohms
VDRM,
ITM = sao
Cycle < .01 %
IT = SO
20
Volt
max. rise time.
= +12SoC
=
SO
R
DRM
Volts
(Reapplied)
=
200
Bias During
= +12SoC
= ISO Amps.
= 1 Volt
(Reapplied)
Bias During
CONDITION
RRM
(Double-Side
(Single-Side
Open.
V
Rising Waveform.
= V
DRM
Supply = 24
Current
D
o°c,
= 2
= 6 Vdc, RL = 3
6Vdc,
V
= 6
D
VD
= 6
RL =
1000
Amps.
Adc, V
Open
Circuit,
H,
Amps.
Min.
of
Reapplied
V/Msec (linear)
di/dt
Rate
Rate
= 5 Amps/Msec.
= 1 pps.
Turn-Off
Ohms
of
Reapplied
200 V /Msec
di/dt
= S Amps/Msec
= I pss.
Turn-Off
Cooled)
Cooled)
=
DRM
(.632)/7
Vdc.
Amps.
RL
= 3
Vdc,
Vdc,
Ohms
Peak
,
DRM
20
Ht
Off-State
Interval
Forward
Interval =
Rated
Ohms
Ohms
Ohms
Gate
Ohm,
=
(linear)
tConsult factory
HDelay time
tttCurrent
risetimc
for
specified maximum Turn-Oft Time.
may
increase significantly
as
measured with a current probe, or voltage risetime across a non-inductive resistor.
as
the gate
drive
approaches the
IGT
of the
Device
907
Under Test.
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