Powerex C358 Data Sheet
1200
Volts
The
General Electric
switching at high frequencies. This
ploying
the
field-proven amplifying gate.
C358
Silicon Controlled Rectifier
is
an all-diffused Press-Pak device em-
FEATURES:
,.
Fully characterized for operation in inverted and chopper applications.
,.
High di/dt ratings.
..
High dv/dt capability with selections available.
..
Rugged hermetic glazed ceramic package.
is
designed
for
225A
power
RMS
AMPLIFYING
GATEA
500
(f)
W
0::
W
a.
:;:
<r
400
I
I-
2:
W
0::
0::
:::>
u
300
w
~
(f)
I
2:
200
0
<r
'"
w
a.
w
as
~
0
....J
....J
<r
100
100
TYPES
FREQUENCY
REPETITIVE
~~
J\JL
SINUSOIDAL
50%
180°
65°
1111
1000
IN
HZ
MAXIMUM
VOLTAGE,
T
= -4Qoc
J
WAVEFORM
DUTY
CYCLE
CONDUCTION
CASE
TEMPERATURE
VOLT
TOCKIING
PEAK
OFF·STATE
VORMI
to
+125°C
~
~
- -
I
1
500
400
300
200
100
REPETITIVE
VOLTAGE,
T
=
-4QoC
J
-
Jl3Ii:?
100
200
RATINGS
PEAK
REVERSE
VRRMI
to
+125°C
r---.
RECTANGULAR WAVEFORM
50-/.
DUTY CYCLE
di/dt
-25
AMPS/p.
65
BOO
"c
SEC
CASE
TEMPERATURE
VOLT
BLOCKING
I I I
400
600
FREQUENCY
1000
REVERSE
~
~
2000
IN
Hz
NON·REPETITIVE
5000
VOLTAGE,
-r
=
+125°C
J
'\
10,000
PEAK
VRSM
1
C358E
I
C358M 600
C358S 700
C358N 800
C358T 900
C358P
C358PA
C358PB
1 Half sinewave waveform 10
ms
max. pulse width.
500
1000
1100
1200
Volts
898
500 Volts 600 Volts
600
700
800
720
840
960
900 1080
1000 1200
1100 1300
1200 1400
RMS On-State
Peak
One Cycle Surge
Peak
One Cycle Surge
12t
(for
12t
(for
Critical
Critical Rate-of-Rise
Average Gate
Storage
Operating
Mounting
tdi/dt
ratings established
20
ohms gate trigger source with
Repetitive
and Off-State
Current,
fusing) for times;;:;'
fusing) for times;;:;'
Rate-of-Rise
of
of
Power
Dissipation,
Temperature,
Temperature,
Force
.............................................................
TEST
Peak
Reverse
Current
C358E
C358M
C358S
C358N
C358T
C358P
C358PA
C358PB
Repetitive Peak Reverse
and Off-State
Current
C358E
C358M
C358S
C358N
C358T
C358P
C358PA
C358PB
Thermal
Resistance
Critical Rate-of-Rise
Off-State Voltage (Higher
may
values
cause device
switching)
Holding Current
DC Gate Trigger Current
DC
Gate Trigger Voltage V
Peak On-State Voltage
IT(RMs)'
(Non-Repetitive)
(Non-Repetitive)
On-State
On-State
T
stg
....................................................
On-State
On-State
1.5
milliseconds
8.3
milliseconds
Current,
Current,
PG(AV)
......................................................
...................................................
Current,
Current,
...............................
...............................
Non-Repetitive
Repetitive
........................................
TJ ......................................................
in
accordance with
0.5/1s
EIA-NEMA
Standard RS-397, Section 5.2.2.6 for conditions of
short circuit trigger current
CHARACTERISTICS
of
SYMBOL
IRRM
and
IORM
IRRM
and
IORM
RaJe
dv/dt
IH
IGT
GT
VTM
MIN.
TYP.
3
-
-
-
3
3 10
3
3 9
-
-
-
3
3
3 7
12
-
-
-
-
-
12 15
12
12 15
12
12 15 1000
12
-
12
.12
-
200
Higher
minimum dv/dt selections available - consult factory.
-
- 50 '
-
-
-
-
0.15
-
.15
500
100
75
15 125
3
1.25 3.0
-
2.8
I
(60
Hz)
TsM
I
TSM
(50
........................
Hz)
........................
.....................................
rise
time.
MAX.
UNITS
mA
T
J
10
10
10
7
7
mA
T J
15
15
15
17
18
.135
.26
DC/Watt
V
/psec
Junction-to-Case - Double-Side Cooled
Junction-to-Case - Single-Side Cooled
TJ
Linear
Exponential
500
mAdc
Te
Initial
150
300
mAdc
Te
Te
Te
5
Vdc
Te
Te
Te
3.5
Volts
Te
Duty
5,200
10,500
TEST
CONOITIONS
==
+25°C,
VORM
500
600
700
800
900
1000
1100
1200
==
125°C, V
ORM
500
600
700
800
900
1100
1200
==
+125°C,
==
+25°C,
On-State
==
==
==
+125°C,
or
Exponential
dv/dt
Anode
+25°C,
-40°C,
Gate
Current
Vo
Vo
Vo
==
==
==
==
==-40°CtoO°C, Vo
==
O°C
to
+125°C,
==
125°C,
VORM,
==
+25°C,
ITM
==
Cycle';;;; .01%,
I
C358
225
Amperes
.1600 Amperes
.1500 Amperes
(RMS Ampere)2 Seconds
(RMS Ampere)2 Seconds
800
Alps t
500
Alps
2 Watts
AO°C
to
+l50°C
-40°C
to
+l25°C
800
Lbs. ±
10%
3.56
KN ±
10%
max.
rated
VDRM;
20
volts,
==
V
RRM
==
-
Volts
==
VRRM
==
Volts
Open. V
Rising Waveform.
VORM
T
Supply
==
6 Vdc, RL
6 Vdc, RL
6Vdc,
==
6Vdc,
Vo
==
6Vdc,
RL
==
500
Amps. Peak.
ORM
(.632)
==
24
2 Amps.
== 3 Ohms
== 3 Ohms
RL
== 3 Ohms
RL
RL
1000
Ohms
==
Rated
Vdc.
==
3 Ohms
==
3 Ohms
i'
899
C358
TEST
Turn-On
Conventional
Commutated
Time
Voltage) -
Faster
Off
Consult
Conventional
Commutated
Time
Diode)
tConsult factory for specified maximum turn-off time.
ttDelay
tHCurrent
Delay Time
Circuit
Turn-Off
(with
Reverse (3) V
Maximum
Times Available,
Factory
(with
ti~e
nsei1me
Turn-
Circuit
Turn-Off
Feedback
y
n:m
illcrease
as
measured wIth a current probe,
SYMBOL
td
tq
tq
(diode)
signifi<;"lntly
MIN.
-
-
as
the gate drive approaches the IGT of the device under test (D.D.T.).
(continued)
TYP.
0.5
25 40
MAX.
UNITS
/lsec
/lsec
Tc
= +25°C,
Supply:
/lsec
(1)
(2)
(4)
(5) Rate-of-Rise
(6)
(7)
(8)
20
max.
Tc = +l25°C
ITM = 150
= 50
R
VDRM
Voltage =
Commutation
Repetition
Gate
o volts,
40
t
/lsec
(1)
Tc
(2)
ITM
(3)
V
R
(4)
V
DRM
(5)
Rate-of-Rise
Voltage =
(6)
Commutation
Repetition
(7)
(8)
Gate
=+125°C
= 1
o volts,
or
voltage risetime across a non-inductive resistor.
TEST
IT
= 50 Adc, V
volt
open
rise time.
Amps.
Volts
(Reapplied)
of
200
Rate
bias during
100
ohms
= 150
Amps.
Volt
(Reapplied)
of
200
Rate
bias during
100
ohms
CONDITION
,
DRM
circuit, 20
tt,
tH
Min.
Reapplied
V//lsec (Linear)
di/dt
Off-State
= 5 Amps//lsec.
= 1 pps.
turn-off
Reapplied
V//lsec (Linear).
di/dt
interval
Off-State
= 5 Amps//lsec.
= 1 pps.
turn-off
interval =
Gate
ohm,
0.1
I
=
I
(J)
w
~
:::;:
1-
!z1000
w
a::
a::
::>
u
w
~
~
I
Z
o
'"
~
a.
10
~
-
--
0
10
I-
I---
~
I--~
1.
MAXIMUM
CURRENT
~
5000
100 1000
1--
1'-
f'
1'-1'-
i'-.
---
-..
---..2500
PULSE BASE WIDTH-MICROSECONDS
ALLOWABLE
VS.
I'..
r-..
"
,1000
PEAK ON-STATE
PULSE WIDTH
ul..s
'"
I'-~
"'I:
"s
1:0
0
""-;,
1'-400
~
(TC
==
65°C)
/tiD
b-.,
60
I'-
10K
900
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