Powerex C354, C355 Data Sheet
HIGH
The General Electric
C354
Silicon
and C355 Silicon Controlled Rectifiers are de-
Controlled
Rectifier
signed for power switching at high frequencies. These are all-diffused Press-
the
Pak devices employing
FEATURES:
..
Fully characterized for operation in inverter and chopper applications.
..
High di/dt ratings.
..
High dv/dt capability with selections available.
..
Rugged hermetic glazed ceramic package.
TYPES
C354A, C355A
C354B, C355B 200
C354C, C355C 300
C354D, C355D 400 400
C354E, C355E 500 500
C354M, C355M 600 600
field-proven amplifying gate.
REPETITIVE
VOLTAGE,
TJ
=
-40°C
MAXIMUM
PEAK
OFF-STATE
VDRMI
to
+125°C
100
Volts
ALLOWAB RATINGS
REPETITIVE
VOLTAGE,
T J =
-40°C
100 Volts
200
300
PEAK
VRRMI
to
REVERSE
+125°C
NON-REPETITIVE
REVERSE
VOLTAGE,
T
=
J
200 Volts
300
400
500
600
720
+125°C
PEAl<
VRSM
1
1
Half
sinewave waveform 10 ms max. pulse width.
Peak One Cycle Surge (Non-Repetitive) On-State Current,
One Cycle Surge (Non-Repetitive) On-State Current, I
Peak
2
t (for fusing) for times ~ 1.5 milliseconds. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
et
(for fusing) for times ~ 8.3 milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Critical Rate-of-Rise
Critical Rate-of-Rise
Average Gate Power Dissipation,
Storage Stemperature, T
Operating Temperature, T
Mounting Force
tdijdt
ratings established
20 ohms gate trigger source with 0.5/1s short circuit trigger current rise time.
of
On-State Current, Non-Repetitive
of
On-State Current, Repetitive
PG(AV)
......................................................
stg
.••..•••••.••.•..•••..••......•..••......••.•.•.......
J
...................................................
.............................................................
in
accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions
ITSM
TSM
.....
(60 Hz)
(50 Hz)
........................
................
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
.......................................
891
..
..
........
9.500
RMS
13,500
RMS
of
max. rated VDRM;
1,800 Amperes
1,700 Amperes
Ampere2 Seconds
Ampere2 Seconds
..
800
A//ls
500
A//ls
2 Watts
-40° C to + 150° C
_40°C
to +125°C
800 Lbs. ± 10%
KN
3.56
± 10%
20
volts,
"I
i"
RISTICS
I
TEST
Repetitive Peak Reverse
and
Off-State
Repetitive Peak Reverse
and Off-State
Thermal
Critical Rate-of-Rise
Off-State Voltage (Higher Using Linear
Values May Cause Device Waveform.
Switching)
Current
Current
Resistance
of
C354
C355
Holding Current
DC Gate Trigger
DC Gate Trigger Voltage
Peak On-State Voltage
Turn-On Delay Time
Conventional Circuit t
Commutated
(with
Time
Voltage) (4)
Current
Turn-Off
Reverse
SYMBOL
IRRM
and
IDRM
IRRM
and
IDRM
ReJc
dv/dt
Higher
IH
IGT
VGT
VTM
td
q
MIN.
-
-
- -
-
200
100
-
-
-
-
-
0.25
-
C354
C355
TYP.
12 17
-
500
300
minimum dv/dt selections - consult factory.
100
50
100
3.0 5.0
1.25 3.0
2.2 3.0 Volts
-
MAX.
5 12
.26
.13 Junction-to-Case - Double-Side Cooled
-
-
-
150
200
30
- -
1 2
120
UNITS
rnA
rnA
DC/Watt
V//lsec
mAdc
mAdc
Vdc
/lsec
/lsec
Tc
Tc
Junction-to-Case - Single-Side Cooled
TJ =
Exponential
Tc = +25°C,
Initial On-State
Tc
Tc
Tc
Tc
RL = 3
Tc = O°C
RL = 3
Tc
Tc = +25°C,
Duty
Tc
Supply:
0.1 /lsec rise
(1)
(2)
(3)
-
-
9
12
10
20
(5) Rate-of-Rise
(6)
(7)
(8)
= +25°C, V =
= 125°C, V = V
+125°C,
+25°C,
=
-40°C, V
=
= +125°C,
= -40°C
= +125°C, VDRM, RL =
Cycle ~ .01%
=
+25°C,
Tc = +125°C
ITM = 50
VR = 50
V
DRM
Voltage = 20 V//JJlec (linear).
Commutation
Duty
Gate
o Volts, 100
Conventional Circuit
Commutated
Time
(with
Diode) (4)
I
Turn-Off
Feedback
C354 - 12
C355
tq(diode)
I
-
15
1-
1-
j1sec
(1)
Tc = +125°C
(2)
ITM
(3)
VR = I Volt
VDRM
(5)
Rate-of-Rise
Voltage = 20 V//lsec (linear)
(6)
Commutation
(7)
Duty
(8)
Gate Bias During
o Volts,
TEST
VDRM
Gate
or
Exponential
dv/dt = VDRM
Anode
Current
VD
D
VD = 6Vdc,
to
O°C, V
Ohms
to
+125°C,
Ohms
ITM = 500
IT =
20 Volt
Bias During
Open
time
Amps.
Volts
(Reapplied)
of
Cycle ~ .01%
Ohms
= 150 Amps.
(Reapplied)
of
Cycle ~ .01%
100
Ohms
CONDITION
= V
RRM
= V
DRM
Open.
Supply = 24
RRM
VDRM = Rated,
Rising
(.632)
T
Vdc.
= 2 Amps.
= 6 Vdc, RL = 3
=
6Vdc,
RL = 3
RL = 3
= 6 Vdc,
D
V
= 6
Vdc
D
1000
Ohms
Amps. Peak
50
Adc, VDRM' Gate
Circuit,
Min.
Reapplied Off-State
di/dt
Turn-Off
Reapplied Off-State
di/dt
Turn-Off
20
Ohm,
= 5 Amps//lsec.
Interval =
= 5 Amps//lsec
Interval =
Ohms
Ohms
Ohms
,Consult factory
for
specified maximum turn-off time.
SINE
RRENT
DOUBLE-SIDE COOLING
RATI
C354/c355
Ul
w
ffi
Il.
~
1000
~
a:
a
w
~
Ul
I
Z
o
,,/'
'"
~
Il.
100
100A/!"S/
/'
/'r"
/'
/
/
-
5000
I
PULSES PER
-
2500
Sl!:c
ft
100
PULSE
BASE
WIDTH-
1.
MAXIMUM
CURRENT VS. PULSE WIDTH
ALLOWABLE
'"
°"'0
'~400
1000
1000
MICROSECONDS
PEAK ON-STATE
(Tc
"'-
= 65°C)
II
III
60
10,000
Ul
W
0:
W
Il.
::E
1000
<t
I
!z
~
w
~
Ul
I
Z
0
~
100
10
I I "
100Al!"o/
/
"'"
./
m
/'
/"
V--
100
PULSE
2.
MAXIMUM
CURRENT VS. PULSE WIDTH
pu(
s<'s
-
2500
BASE
WIDTH-MICROSECONDS
ALLOWABLE
~
P<'/y
~<'COil'
I
I""N.
........
400
I I
r-.
1000
1000
PEAK ON-STATE
(Tc = 90°C)
~
60
10,000
893
Loading...