Powerex C184, C185 Data Sheet

SPEED

The General Electric C184 and
signed for

power

switching

at

!icon

800

Volts

Cl85

high frequencies. These are all-diffused Pic-

Controlled

Silicon Controlled Rectifiers are de-

Pac devices, employing the field-proven amplifying gate.

FEATURES:

..

High di/dt Ratings.

..

High dv/dt Capability.

..

Excellent Surge and 12t Ratings Providing Easy Fusing.

..

Guaranteed Maximum Tum-Off Time with Selections Available.

..

Rugged Hermetic Package with Long Creepage Path.

MAXIMUM

ALLOWABLE RATINGS

Rectifier

300A

RMS

TYPES

C184/C185A 100 Volts
C184/C185B
C184/C185C 300
C184/C185D 400
C184/C185E
C184/C185M 600

C185S 700
C185N 800

1 Half sinewave waveform, 10

RMS

On-State Current,
Critical Rate-of-Rise
Critical Rate-of-Rise
Peak One Cycle Surge
Peak One Cycle Surge (Non-Repetitive) On-State Current, I

2

1

t (for fusing) for times:;;:' 1.5 milliseconds

12t (for fusing) for times:;;:' 8.3 milliseconds

Average Gate Power Dissipation,
Storage Temperature, Tstg
Operating Temperature, T
Stud Torque

...................................................

REPETITIVE

T J =

ms

max. pulse width.

IT(RMS)

of

On-State Current, Non-Repetitivet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

of

On-State Current, Repetitivet

(Non-Repetitive) On-State Current,

..••......••...........................•.............

......................................................

•.••.••......••.•••••.•.•...••••...••••.•••••••••••.••

J

PEAK OFF-STATE

VOLTAGE,

-40°C

200

500

PG(AV)

.........•.•..........•.........•.•.••.............

VDRMI

to

+125°C

......................................

...............................

...............................

REPETITIVE

VOLTAGE,

T J =

ITSM

(60
(50 Hz)

TsM

PEAK

REVERSE

VRRM

-40°C

to

+125°C

100 Volts
200
300
400
500
600
700
800

Hz)

........................

........................

1

300

NON-REPETITIVE PEAK

REVERSE

35,000 (RMS
50,000 (RMS Ampere)2 Seconds

w-In

34

VOLTAGE,

T

=

+125°C

J

200 Volts
300
400
500
600
720
840
960

300 Amperes
..

" 500 A/ps
3500 Amperes
3200 Amperes

Ampere?

_40°C

-40°C

(Max.), 250 Lb-IN (MinJ

N-m

(Max.), 28

VRSM

800

Seconds

2 Watts

to

+lSO°C

to +l2S

N-m

(Min.)

A/

1

ps

oC

tdi/dt

ratings established

wo

ohms gate trigger source with 0.5/ls short circuit trigger current rise time.

in

accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated VDRM; 20 volts,

851

C184,C185

CHARACTERISTICS

TEST

Repetitive Peak Reverse
and

Off-State

Repetitive Peak Reverse

and Off-State

Thermal

Critical Rate-of-Rise
Off-State Voltage (Higher
values

switching)

Holding

DC Gate Trigger

DC

Gate Trigger Voltage

Peak On-State Voltage

Turn-On Delay Time

Conventional Circuit

Commutated

(with

Time

Voltage)

Conventional Circuit
Commutated

(with

Time
Diode)

Resistance

may

cause device

Current

Reverse

Feedback

Current

Current

of

Current

Turn-Off

Turn-Off

SYMBOL

I

RRM
and

IORM
IRRM

and

IORM

ROJC

dv/dt

IH

IGT

V

GT

V

TM

td

tq

C184
C18S

tq

(diode)

C184
C18S

MIN.

-

.

- IS

-

200

Higher

minimum dv/dt selections available - consult factory.

-

-

-

-

- -

-

O.lS

-

-

-

- IS

-

TYP.

.12
SOO

l2S
l7S
100 2S0

MAX.

3 10

.1S

7S

-

SOO

300
SOO

S.O

3.0

20 rnA

-

-

2.3

10

20

2.8S Volts

1

8 10

-

20

t
t

UNITS

rnA

DC/Watt

V/Ilsec

mAdc

mAdc

Vdc

Ilsec

Ilsec

e

Ils

c

TEST

CONDITIONS

T

= +2SoC, V = V

J

T

=

l2SoC,

J

J

un

ction-to-Case

T

= +12SoC,

J

or

linear
Exponential

Tc
Initial

Tc
Tc
Tc

Tc
Tc = O°C
Tc

Tc

Duty

T c = +2SoC,

Supply: 20 Volt

0.1 Ilsec max. Rise Time.

(1)

(2)

(3)
(4)
(S) Rate-of-Rise

(6)
(7)
(8)

exponential

= +2SoC, Anode Supply =

On-State Current = 2.S Amps.

+2SoC,

=

-40°C,

=
= +12SoC,

=-40°C

=+12SoC,

to

to

= +2SoC,

Cycle ~ .01%.

Tc

= +12SoC

ITM

= 2S0 Amps.

VR =

SO

VORM

(Reapplied)

Voltage =
Commutation

Duty

Cycle ~ .01

Gate

Bias During Turn-Off

o Volts,

(1)

Tc
(2)
(3)
(4)
(S) Rate-of-Rise

(6)
(7)
(8) Gate Bias During

= +12SoC

ITM

= 2S0 Amps.

VR = 1 Volt
VORM

Voltage =

Commutation
Duty

Cycle ~ .01%.

o Volts,

ORM

V = V

ORM

Gate

Open. V

rising waveform.

dv/dt

Vo = 6Vdc,
Vo

O°C, Vo = 6Vdc, RL = 3 Ohms

+12SoC, Vo =

VORM,
ITM = lSOO

IT = SO

Volts Min.

200

100

(Reapplied)

100

ORM

= V

T

= 6 Vdc, RL = 3 Ohms

Vo

= 6 Vdc, RL = 3 Ohms

RL = 1000

Adc, V

Open

Circuit,

of

Reapplied Off-State

V/Ilsec (linear)

di/dt = l2.S

%.

Ohms.

of

Reapplied Off-State

200

V /Ilsec (linear)

di/dt

Turn-Off

Ohms.

= V

RRM

= V

RRM

= Rated,

ORM

(.632)

24

Vdc.

RL = 3 Ohms

6Vdc,

RL = 3 Ohms

Ohms

Amps Peak.

'

Gate

ORM

20

Ohm,

Amps/Ilsec.
Interval

=

= 12.S Amps/Ilsec.

Interval =

I

tConsult factory for maximum turn-off time.

852

100

40

iO iO

SINE

00

200

400

600

1000

PULSE BASE WIDTH - MICROSECONDS

2000

CURRENT

4000

10,000

DATA

1.

MAXIMUM

CURRENT

ALLOWABLE PEAl< ON-STATE

VS.

PULSE WIDTH

(TC

= 65°C)

1000

"

r'\.

r\.

\

~

~l

1,,\ I

n

1\6'0

2.

~~

~

~

MAXIMUM

CURRENT

~

200

40

iO

10

00

200

400

600

1000

2000

PULSE

8ASE

WIDTH - MICROSECONDS

900

1000E==I=3E~~~~E$1l±=~==~

800
7001--1---+-­600

500
400

300~~"""-l-""

Ul

w

a:

w

0..

~

150

t---!--

4000

~

W 100

r:::t=$a

a:

90

a:

80

a

70

l-:::$~;:::1

W

601-

!;t

50

I"--t=-.j,,;;;:::--t-

~

401--+--+---r--:::

z

~

30

I---I--l--+--+-++f"!o-+l----=:!!j>--I--

~

10,000

ALLOWABLE

VS.

PULSE WIDTH

NOTES:

(Pertaining

to

Sine

and

Trapezoidal

Switching voltage ~ 400

1.

2.

RC

Snubber

3. Reverse voltage VR ~ 400

4.

Values

of

W-S/D are

-

.22J.Lf,

PEAl< ON-STATE

(TC

= 90°C)

Wave

Current

volts.

5

ohm.

volts.

for

T J =

125°C.

Ratings)

PULSE

WIDTH-MICROSECONDS

853

3.

ENERGY
SINUSOIDAL PULSES

PER

PULSE

FOR