Powerex C164, C165 Data Sheet

HIGH

Ii

The

General Electric

signed for

devices, employing

Pic

FEATURES:

e High di/dt Ratings.

e High dv/dt Capability with Selections Available.

..

Excellent Surge and

..

Guaranteed Maximum Turn-Off Time with Selections Available.

..

Rugged Hermetic Package with Long Creepage Path.

power

C164

switching

12

t Ratings Providing Easy Fusing.

and C165 Silicon Controlled Rectifiers are de-

at

high frequencies. These are all-diffused Pic-

the

field-proven amplifying gate.

C164
C165

AMPLIFYING

GATE

C164-2
C165-2

I

Equipment designers can use the C164 and C16S SCR's in demanding applications such
..

Choppers

..

Inverters

TYPES

CI64/CI6SA
C164/C16SB
CI64/CI6SC
CI64/CI65D
C164/C16SE
CI64/CI6SM

C16SS
C16SN

. .

1 Halt sIne wave wavejorm, 10

RMS

On-State Current,

REPETITIVE

ms

max. pulse wIdth .

IT(RMS)

.....................................................

VOLTAGE,

T J =

-40°C
100

200 200
300
400
SOO
600
700 700
800 800

Peak One Cycle Surge (Non-Repetitive) On-State Current, h'stv! (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM
12t

(for

2

1

t

(for

fusing) for
Critical Rate-of-Rise
Critical Rate-of-Rise
Average Gate Power Dissipation,
Storage Temperature, T
Operating Temperature, T
Stud

Torque.

td!. dt ratings established in accordance with ElA-NEMA Standard RS-397, Section 5.2.2.6 for conditions
20

ohms

gate trigger source with

fusing) for

times;;'
times;;'

of
of

I.S milliseconds.

8.3 milliseconds

On-State Current, Non-Repetitivet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

On-State Current, Repetitivei' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

PG(A

V)

......................................................

stg

...•••••.•..•.•••..•..•••••..•.•......•...••.•••••.•••

J

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5}-Ls

short circuit trigger current rise time.

..

Sonar Transmitters

..

Induction Heaters

MAXIMUM

PEAK

OFF-STATE

VORMI

to

+125°C

ALLOWABLE

REPETITIVE

VOLTAGE,

T J =

RATINGS

-40°C

Volts 100 Volts

300
400
SOO
600

(SO

Hz)

...............................

...............................

...................................................

..

Cyc1oconverters

..

DC

PEAK

REVERSE

I

VRRM

to

+125°C

........................

........................

to

DC

REVERSE

9,SOO

13,SOO

838

as:

Converters

NON-REPETITIVE

VOLTAGE,

T

=

J

+125°C

PEAK

V

RSM

200 Volts
300
400
SOO
600
720
840
960

110 Amperes
1800 Amperes
1700

Amperes
(RMS Ampere)2 Seconds
(RMS Ampere)2 Seconds

..

800 A/ps

..

SOO

2 Watts

AO°C

to

+150°C

_40°C

to

+12SoC

..

12S-1S0

14-17

of

max. rated VDRM;

20

I

A/ps

In-

Lb

N-m

volts,

CHARACTERISTICS

C164, C165

TEST

Peak Reverse and Off­State

Current

SYMBOL

IRRM

and

MIN.

TYP.

MAX.

5 12 rnA

UNITS

= +25°C, V = V

T

J

TEST

CONDITION

DRM

IDRM

Peak
State

Reverse

Current

and

Off-

IRRM

and

-

12

17

rnA T

=

J

+125°C,

V =

VDRM

IDRM

Thermal

Resistance

Critical Rate-of-Rise

of

ROJe

dv/dt

200

-

500

0.3

Off-State Voltage (Higher linear or
values

may

cause device

switching) T

Higher

minimum dv/dt selections available - consult factory.

Holding

DC

DC

Peak

Delay

Current

Gate

Trigger

Gate

Trigger Voltage

On-State

Time

Conventional
mutated
(with

Faster
Times

Turn-Off

Reverse Voltage)

Maximum

Available, Consult

Current

Voltage

Circuit Com-

Time

Turn-Off

IH

lCT

V

GT

V

TM

td

tq

Cl64
C165

-

-

-

-

-

0.15

-

-

40

70

100

25

3 5

1.25

- -

1.9

0.5

8 10

15

1000

250
400
175

Factory

Conventional
Commutated
Time

(with

Circuit
Turn-Off

Feedback

tq

(diode)

Diode)

CI64
Cl65

-

-

15
20

-

3.0

2.6

2.0

20

t
t

DC/Watt

V /psec

mAdc

mAdc

Vdc

Volts

psec

psec

psec

J unction-to-Case
T

=

+125°C,

J

Exponential

T

= +25°C,

J

Initial On-State
Te

=

Te

=

Gate Open. V

exponential

dv/dt = VDRM

Anode

+25°C, V

-40°C, V
Te = +l25°C,
Te

= -40°C

Te = O°Cto
Te

= 125°C, V

T e = +25°C,

Duty
Te

= +25°C,

Supply:

0.1

psec

(I)

Te
(2)
(3)

V
(4)

VDRM

to
+125°C,

Cycle ~ .01

20

Volt

max. rise

=

+125°C

ITM

= 150 Amps.

= 50

R

Reapplied

O°C,

lTM = 500

IT

Volts

(5) Rate-of-Rise

Voltage
(6)

Commutation

(7)

Repetition

(8)

Gate bias during

o volts,

(1)

Te = +125°C

(2)

ITM

(3)

V
( 4) V
(5) Rate-of-Rise

Voltage
(6)

Commutation

(7)

Repetition
Gate bias during

(8)

=

100

= 150 Amps.

= I Volt

R

, Reapplied

DRM

=

rising waveform.

Supply = 24

Current

= 6 Vdc, RL = 3 Ohms

D

=

6Vdc,

D

V

=

6Vdc,

D

V

D

V

D

, RL =

DRM

%.

= 50 Adc, VDRM.

Open

timett,

Min.

of

Reapplied Off-State

200V/psec

di/dt

Rate

= 1 pps.

turn-off

ohms

of

Reapplied Off-State

200V/psec

di/clt = 5

Rate

= 1 pps.

turn-off

o volts, 100 ohms.

= V

RRM

= V

RRM

DRM

(.632)

= 2 Amps.

RL = 3 Ohms
RL = 3 Ohms

=

6Vdc,

=

6Vdc,

1000

Amps. Peale.

Circuit,

20

tH

(linear)

= 5

Amps/psec

interval =

(linear)

Amps/psec

interval =

=

Rated

Vdc.

RL

= 3 Ohms

RL

= 3 Ohms

Ohms

Gate
Ohm,

tConsult factory

tt

Delay

tttCurrent

time

risetime

for

may

specified maximum turn-off time.

increase significantly a t the gate

as

measured with a current probe, or voltage risetime across a non-inductive resistor.

drive

appwaches the

IGT

of the

Device

839

Under Test.