HIGH
Ii
The
General Electric
signed for
devices, employing
Pic
FEATURES:
e High di/dt Ratings.
e High dv/dt Capability with Selections Available.
..
Excellent Surge and
..
Guaranteed Maximum Turn-Off Time with Selections Available.
..
Rugged Hermetic Package with Long Creepage Path.
power
C164
switching
12
t Ratings Providing Easy Fusing.
and C165 Silicon Controlled Rectifiers are de-
at
high frequencies. These are all-diffused Pic-
the
field-proven amplifying gate.
C164
C165
AMPLIFYING
GATE
C164-2
C165-2
I
Equipment designers can use the C164 and C16S SCR's in demanding applications such
..
Choppers
..
Inverters
TYPES
CI64/CI6SA
C164/C16SB
CI64/CI6SC
CI64/CI65D
C164/C16SE
CI64/CI6SM
C16SS
C16SN
. .
1 Halt sIne wave wavejorm, 10
RMS
On-State Current,
REPETITIVE
ms
max. pulse wIdth .
IT(RMS)
.....................................................
VOLTAGE,
T J =
-40°C
100
200 200
300
400
SOO
600
700 700
800 800
Peak One Cycle Surge (Non-Repetitive) On-State Current, h'stv! (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM
12t
(for
2
1
t
(for
fusing) for
Critical Rate-of-Rise
Critical Rate-of-Rise
Average Gate Power Dissipation,
Storage Temperature, T
Operating Temperature, T
Stud
Torque.
td!. dt ratings established in accordance with ElA-NEMA Standard RS-397, Section 5.2.2.6 for conditions
20
ohms
gate trigger source with
fusing) for
times;;'
times;;'
of
of
I.S milliseconds.
8.3 milliseconds
On-State Current, Non-Repetitivet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
On-State Current, Repetitivei' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PG(A
V)
......................................................
stg
...•••••.•..•.•••..•..•••••..•.•......•...••.•••••.•••
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.5}-Ls
short circuit trigger current rise time.
..
Sonar Transmitters
..
Induction Heaters
MAXIMUM
PEAK
OFF-STATE
VORMI
to
+125°C
ALLOWABLE
REPETITIVE
VOLTAGE,
T J =
RATINGS
-40°C
Volts 100 Volts
300
400
SOO
600
(SO
Hz)
...............................
...............................
...................................................
..
Cyc1oconverters
..
DC
PEAK
REVERSE
I
VRRM
to
+125°C
........................
........................
to
DC
REVERSE
9,SOO
13,SOO
838
as:
Converters
NON-REPETITIVE
VOLTAGE,
T
=
J
+125°C
PEAK
V
RSM
200 Volts
300
400
SOO
600
720
840
960
110 Amperes
1800 Amperes
1700
Amperes
(RMS Ampere)2 Seconds
(RMS Ampere)2 Seconds
..
800 A/ps
..
SOO
2 Watts
AO°C
to
+150°C
_40°C
to
+12SoC
..
12S-1S0
14-17
of
max. rated VDRM;
20
I
A/ps
In-
Lb
N-m
volts,
CHARACTERISTICS
C164, C165
TEST
Peak Reverse and OffState
Current
SYMBOL
IRRM
and
MIN.
TYP.
MAX.
5 12 rnA
UNITS
= +25°C, V = V
T
J
TEST
CONDITION
DRM
IDRM
Peak
State
Reverse
Current
and
Off-
IRRM
and
-
12
17
rnA T
=
J
+125°C,
V =
VDRM
IDRM
Thermal
Resistance
Critical Rate-of-Rise
of
ROJe
dv/dt
200
-
500
0.3
Off-State Voltage (Higher linear or
values
may
cause device
switching) T
Higher
minimum dv/dt selections available - consult factory.
Holding
DC
DC
Peak
Delay
Current
Gate
Trigger
Gate
Trigger Voltage
On-State
Time
Conventional
mutated
(with
Faster
Times
Turn-Off
Reverse Voltage)
Maximum
Available, Consult
Current
Voltage
Circuit Com-
Time
Turn-Off
IH
lCT
V
GT
V
TM
td
tq
Cl64
C165
-
-
-
-
-
0.15
-
-
40
70
100
25
3 5
1.25
- -
1.9
0.5
8 10
15
1000
250
400
175
Factory
Conventional
Commutated
Time
(with
Circuit
Turn-Off
Feedback
tq
(diode)
Diode)
CI64
Cl65
-
-
15
20
-
3.0
2.6
2.0
20
t
t
DC/Watt
V /psec
mAdc
mAdc
Vdc
Volts
psec
psec
psec
J unction-to-Case
T
=
+125°C,
J
Exponential
T
= +25°C,
J
Initial On-State
Te
=
Te
=
Gate Open. V
exponential
dv/dt = VDRM
Anode
+25°C, V
-40°C, V
Te = +l25°C,
Te
= -40°C
Te = O°Cto
Te
= 125°C, V
T e = +25°C,
Duty
Te
= +25°C,
Supply:
0.1
psec
(I)
Te
(2)
(3)
V
(4)
VDRM
to
+125°C,
Cycle ~ .01
20
Volt
max. rise
=
+125°C
ITM
= 150 Amps.
= 50
R
Reapplied
O°C,
lTM = 500
IT
Volts
(5) Rate-of-Rise
Voltage
(6)
Commutation
(7)
Repetition
(8)
Gate bias during
o volts,
(1)
Te = +125°C
(2)
ITM
(3)
V
( 4) V
(5) Rate-of-Rise
Voltage
(6)
Commutation
(7)
Repetition
Gate bias during
(8)
=
100
= 150 Amps.
= I Volt
R
, Reapplied
DRM
=
rising waveform.
Supply = 24
Current
= 6 Vdc, RL = 3 Ohms
D
=
6Vdc,
D
V
=
6Vdc,
D
V
D
V
D
, RL =
DRM
%.
= 50 Adc, VDRM.
Open
timett,
Min.
of
Reapplied Off-State
200V/psec
di/dt
Rate
= 1 pps.
turn-off
ohms
of
Reapplied Off-State
200V/psec
di/clt = 5
Rate
= 1 pps.
turn-off
o volts, 100 ohms.
= V
RRM
= V
RRM
DRM
(.632)
= 2 Amps.
RL = 3 Ohms
RL = 3 Ohms
=
6Vdc,
=
6Vdc,
1000
Amps. Peale.
Circuit,
20
tH
(linear)
= 5
Amps/psec
interval =
(linear)
Amps/psec
interval =
=
Rated
Vdc.
RL
= 3 Ohms
RL
= 3 Ohms
Ohms
Gate
Ohm,
tConsult factory
tt
Delay
tttCurrent
time
risetime
for
may
specified maximum turn-off time.
increase significantly a t the gate
as
measured with a current probe, or voltage risetime across a non-inductive resistor.
drive
appwaches the
IGT
of the
Device
839
Under Test.
I C164, C165
4000
to
3000
"'
i:i
2000
a.
:;
<l:
1000
I
BOO
>-
z
600
"'
a:
400
a:
::>
300
u
200
"'
>-
<l:
>-
to
Z
0
to
::>
0
"'
z
<l:
>-
z
«
>-
to
""
100
BO
60
40
30
20
10
1.0
1.
125°C
MAXIMUM
~
~
/
f
---
I
/25°C
2.0
INSTANTANEOUS
3.0
ON-STATE
4.0
VOLTAGE - VOLTS
ON-STATE CHARACTERISTICS
-
~
5.0
6.0
NOTES:
1.
2.
INSTANTANEOUS GATE CURRENT - AMPERES
The
locus of possible DC trigger
boundaries
shown
at
various case
points
lies
temperatures.
GATE TRIGGER CHARACTERISTICS
AND
POWER
RATINGS
outside
the
I
10,000
to
a:
"'
~2,OOO
:;;
«
I
1,000
>-
BOO
z
600
"'
~
400
::>
u
"'
200
~
100
'?
BO
z
o
60
~
40
a.
"'
20
10,000
to
"'
a:
~
2000
:;
~
1000
>-
BOO
z
600
"'
~
400
::>
u
UJ
200
~
100
~,
BO
Z
o
60
40
«
"
UJ
a.
20
5.
t:: NOTES:
~
RC
r---.
SNUBBER:
--
20K
VSw ~ 400V
VR $
400V
5!l,
.251'f
Tc~
65°C
10K
15K
-
2.5
5~
K':::
IK
PU(Sf:
S
Pf:fI
1'--400
Sf:
I
20
40
60
100
200
400
600
1000
2000
3.
MAXIMUM
PULSE BASEWIDTH
ALLOWABLE
- MICROSECONDS
PEAK ON-STATE
CURRENT VS. PULSE WIDTH (TC = 65°C)
NOTES:
!
RC
SNUBBER:
I-......
~
-.....
M
"
I,
r--
..............,
-
"""
~
I'I'-
""
i'-..
'"
.05
1000
.15
.1
2000
20
ENERGY
.0075
.01
.015
.025
I 1
I I
40
60
100
200
PULSE BASEWIDTH
PER
PULSE FOR
400
- MICROSECONDS
600
SINUSOIDAL
C
OIVO
r-
4000
Vsw ~ 400V
VR $
TJ~125°C
I I
2.5
PER
"
""
~
.25
4000
60
10,000
400V
5!l,
.251'f
III
I I
WATT-SEC
PULSE
-f!i-
Jl
1.0
l
I
I
10,000
PULSES
10,000
to
UJ
a:
UJ
a.
:;
<l:
I
>-
z
UJ
::E
::>
u
UJ
>-
f'!
'?
z
o
~
UJ
a.
~
NQ
~
"-
..JWlLJa..
<t
>I-::E
:x:<t<t<t
3<1--
::::::WU)I
1
<:(2:
",,-ZZ
a..(/)OW
~
1000
BOO
600
400
200
100
BO
60
40
20
I-
4.
NOTES:
RC
VSw ~ 400V
VR
SNUBBER:
5!l,
Tc = 90°C
r-
-I"-
10
20
40
60
PULSE BASEWIDTH
MAXIMUM
$
400V
.25,,1
r-...
.........
2.5
5K
K
I
LI
I
JI
100
200
ALLOWABLE
PU(Sf:S
......
IK
K
400600
- MICROSECONDS
PEAK ON-STATE
CURRENT VS. PULSE WIDTH (Tc = 90°C)
20,000
~
15,000
I
N
10,000
::E
<t
8,000
Ul
::E
!!;.
(j)
a::
""
""
.-
a::
a::
6,000
4,000
3,000
2,000
1,000
6.
SUB-CYCLE SURGE (NON-REPETITIVE)
ON-STATE
INITIAL
TJ
~
-40°C
~
-.
-....
r-.
1.5
2
PULSE BASE WIDTH - (MILLISECONDS)
CURRENT
3
AND
'400
1000
TO
+125°C
--.
4
2
1
t
Pf:fI
Sf:
C
OIVO
-
I
2000
4000
r-..
6
RATING
~
60
-
8
10,000
-
r-..
10
840
I
l/
C164,C165
...-
--
/'
V
V
V
V
/
,~
~l-N
I
MODEL
C164-2
C165-2
NOTES'
I.
ONE
NUT
OF
HARDWARE
2.
"T"
DIM.
WITHIN
3. ANGULAR ORIENTATION
G L
\-
RED
p~
I-F-~~
L-
~EE~-N"-OT-E-2-U'-""-''---l
t~
f
N
TERMINAL
CD
GATE
AND
ONE
LOCKWASHER SUPPLIED WITH
IS
STEEL, CAD
IS
AREA
OF
2.5
UNTHREADED PORTION. COMPLETE THDS. ARE
THREADS
OF
OF
E
D
I
.0.001
TERMINAL
@ @
CATHODE ANODE
+
PLATED.
SEATING PLANE.
TERMINALS
IS UNDEFINED.
7.
TRANSIENT
TERMINAL
-
EACH
~SEATING
.01
TIME (SECONDS)
THERMAL
JUNCTION-TO-CASE
OUTLINE DRAWING
S
THREAD SIZE
1/2·20
UNF-2A
UNIT. MATERIAL
PLANE
I
IMPEDANCE -
INCHES
SYM
MIN. MAX.
A
1.020 1.140
B
.390
.500
1.460
C
D
E .312 REF
F .797
G
H
J
K
SYM
A
B
C
D
E
F
G
H
J
K
REF
1.800
1.660
.827
.060
.075
.385
.415
.445
.485
.198 .212
INCHES
MAX.
MIN.
1.140
1.020
.390
.500
1.570 1.750
6.000
6.390
6.850
7,500
.797
.827
.140 .150
.300
.500 .610
.260
281
10
METRIC
MM
MIN.
MAX.
25.90
28.96
9.90
12.70
7.
92
REF
42.16
45.72
7.92
REF
20.24
21.01
1.52
1.91
9.77
10.54
11.30 12.32 V
5.02
5.38
METRIC
MM
MIN.
MAX.
25.90
28.96
9.90
12.70 M
39.87
44.45
152.40 162.31
173.99 190.50
20.24
21.01 R
3.81
3.55
7.62
12.70
15.49
7.14
6.60
100
INCHES
SYM.
MIN. MAX. MIN. MAX.
L
.590
.058
N
P
.840
Q
.425
T
-
1.052
INCHES
SYM
MIN.
.330
L
275
N
.065
P
.840
Q
.425
.920
T
-
V
1.052 1.063
METRIC
MM
.640
14.98
16.26
.070
1.47 1.78
.910
.499
.060
1.063
MAX.
-
.325
.095
.910
.499
23.11
21.33
10.79 12.67
1.52
-
26.72
27.OC
METRIC
MM
MIN. MAX.
8.38
-
6.98
8.26
1.65
2.41
23.11
21.33
10.79 12.67
- 23.36 - 4
.060
-
26.72
1.57
27.00
NOTES
2
NOTES
5
MODEL
CI64
CI65
NOTES:
I.
GATE 8 AUX.
2. FLEXIBLE
3.
ONE
HARDWARE
4.
"R"
DIM.
5.
"T"
DIM. IS AREA
WITHIN
6. ANGULAR
NUT
AND
IS
2.5
TERMINAL TERMINAL
CD
GATE
CATHODE
LEADS
COPPER
ONE
IS
STEEL,
DIA.
OF
OF
THREADS
ORIENTATION
SUPPLIED
LEAD
LOCKWASHER
CAD
PLATED.
EFFECTIVE SEATING AREA.
UNTHREADED PORTION. COMPLETE THDS. ARE
OF
SEATING
OF
TERMINAL TERMINAL S
CATHODE
LIGHTLY
PLANE.
®
+
TWISTED
WITH
EACH
UNIT. MATERIAL
®
AUX
CATHODE
SUPPLIED
TERMINALS IS UNDEFINED.
@)
ANODE
-
TOGETHER.
THREAD
SIZE
1/220UNF-2A
OF
841
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