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C158
Data Sheet
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Powerex C158, C159 Data Sheet

HIGH SPEED
Silicon
1200
Volts
Controlled
Rectifier
110
ARMS
FEATURES:
..
High
di!dt ratings.
..
High
dv/dt capability with selections available.
..
Excellent surge and
..
Guaranteed maximum turn-off time with selections available.
..
Rugged hermetic package with long creepage path.
250
the
field-proven amplifying gate.
et
ratings providing easy fusing.
HI
FR
ENCY
RRENT
Pic-
AMPLIFYING
GATE
ING
I---
fV\.
SINUSOIDAL
WAVEFORM
50%
DUTY
ISOo CONDUCTION
65°C
CASE
snVil!
TYPES
C158E, C159E C158M,
C159M 600 C158S, C159S CI58N, C159N CI58T, C159T C158P, C159P C158PA, CI59PA C158PB,
C159PB 1200
CYCLE
TEMPERATURE
mlTCHr
100 1000
FREQUENCY
I I
IN
HZ
REPETITIVE
VOLTAGE,VDRMI
T J = -40°C
"-
f',
\
r-­r-­r--
MAXIMUM
PEAK
OFF-STATE
to
+125°C
500 Volts
ALLOWABLE RATINGS
REPETITIVE
VOLTAGE,
TJ = -40°C
500 Volts 600 Volts
600 720 700 800 900
1000
700 840
800 960
900
1000
1100 1100
1200 1400
~I
RECTANGULAR
50%
dI/dt
L.-65C
,SOO
200
PEAK
V
to
+125°C
WAVEFORM
DUTY
-25jJ
CASE
TEMPERATURE
VOLT
SfiTCHING
REVERSE
1
RRM
CYCLE
SEC
500
--....
'"
J
1
1000
FREOUENCY
NON-REPETITIVE
REVERSE
~
Itl
Hz
T
1080 1200 1300
I"-
"-
2000
VOLTAGE,
=
+125°C
J
5000
PEAK
VRSMI
1 Half sinewave waveform, 10 ms max. pulse width.
830
RMS
On-State
Peak
One
Peak
One
et
(for
J2
(for
t
Critical
Current, Cycle Surge Cycle Surge
fusing) for times;;;' 1.5 milliseconds fusing)
for
Rate-of-Rise
Critical Rate-of-Rise Average Storage
Operating
Stud
Gate
Temperature,
Temperature,
Torque
Power Dissipation,
................................................
IT(RMS) (Non-Repetitive) (Non-Repetitive)
times;;;'
of of
8.3 On-State On-State
T
....................................................
stg
T
..................•......................•............
J
.....................................................
On-State On-State
Current, Current,
ITsM ITSM
(60 (50
...............................
milliseconds
Current, Current, PG(A
...............................
Non-Repetitive. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive
V)
...................................................
.......................................
Hz)
........................
Hz)
........................
5,200
(RMS
10,500
(RMS Ampere)2 Seconds
150 Lb.-In. (Max.),
17 N-m (Max.),
C158,C159
110 1600 1500
Ampere?
..
.-
._40°C
AO°C
125
Lb.-In. (Min.)
14
Amperes Amperes Amperes
Seconds
800
AIMS
500
AIMS
2 Watts
to
+IS0°C
to
+12SoC
N-m (Min.)
t
t
tdi/dt ratings established
20
ohms gate trigger source
TEST
Repetitive and Off-State
C1S8E, ClS8M,
Peak Reverse
Current
C1S9E
C1S9M C1S8S, C1S9S C1S8N, C1S8T, C1S8P,
CIS9N
C1S9T
C1S9P ClS8PA,ClS9PA C1S8PB, C1S9PB
Repetitive and Off-State
ClS8E,
ClS8M, C1S8S,
Peak Reverse
Current
ClS9E
ClS9M
ClS9S C1S8N, C1S9N C1S8T, C1S9T ClS8P,
C1S9P C1S8PA,ClS9PA C1S8PB,
Thermal
ClS9PB
Resistance
Critical Rate-of-Rise Off-State Voltage (Higher values
may
cause device
switching)
Holding
DC
Current
Gate
Trigger Current
in
accordance with
with
0.5
fiS
SYMBOL
IRRM
and
IDRM
IRRM
and
IDRM
ReJc
of
dv/dt
IGT
EIA-NEMA
Standard RS-397, Section 5.2.2.6 for conditions of max. rated
short circuit trigger current
CHARACTERISTICS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
200
Higher
IH
TYP.
3 10 3 10 3 10 3 3 9 3 7 3 7 3 7
12 12 12 IS 12 IS 12 IS 12 12 17 12
.2 .3 °C/Watt
SOO
minimum dv/dt selections availabie consult factory.
100
-
-
-
80
150 300
30
rise
MAX.
10
lS IS
IS
18
-
-
ISO
125
time.
UNITS
rnA
rnA
V //lsec
mAde
mAdc
VDRM;
TEST
CONDITION
= +2SoC
T
J
V
=
VRRM
ORM
=
SOO
Volts
Peak
600 700 800 900
1000 1100 1200
= 12SoC
T
J
V
DRM
= V
RRM
=
SOO
Volts
Peak 600 700 800 900
1000 1100
1200 Junction-to-Case T
= +12SoC,
J
Linear Exponential
Tc
= +2SoC,
Initial
On-State
Tc
=
Tc
=
Tc
= +12SoC, VD = 6 Vcle, RL = 3 Ohms
Gate
or
Exponential
dv/dt = DR
Anode
+2SoC, V
-40°C, V
Open.
V
DRM
Rising Waveform.
V M
(,632)
' ,
T
Supply = 2S
Current
D D
= 2 Amps. = 6 Vde, RL = 3 Ohms = 6 Vclc, RL = 3 Ohms
20
= Rated
Vdc.
volts,
831
C158,C159
DC
Gate
Peak
On-State
Turn-On
Conventional Commutated Time
(wit h Reverse
Voltage)
Con
ventional Commutated Time
(with
Diode)
tCOl1Sult
ttDelay
tttCuucnt
factory for specified maximum Turn-Off Time.
Time
rise
TEST
Trigger Voltage
Voltage
Delay
Time
Circuit
Turn-Off
Circuit
Turn-Off
Feedback
may
increase significantly
time
as
measured with a current probe,
SYMBOL
VCT
VTM
td
tq
(diode)
tq
CHARACTERISTICS (Continued)
as
the gate
MIN.
-
-
0.15
-
-
-
TYP.
1.25 3.0
2.8 3.5
0.5
40
drive
or
MAX.
3 5
- -
-
20
25
approaches the voltage rise time across a non-inductive resistor.
40
t
UNITS
Vdc
Volts
fJ.sec
IGT
fJ.sec
fJ.sec
fJ.sec
of the
t
TEST
Tc
=-40°CtoO°C,
Tc
=O°Cto
Tc
= 125°C, VDRM, RL =
Tc = +25°C, Duty
Tc = +25°C,
Supply:
0.1
fJ.sec
(1)
Tc = +125°C
(2)
IT
(3)
VR =
(4)
V
(5)
Rate-of-Rise Voltage = 20 V/fJ.sec
(6)
Commutation Repetition
(7)
(8)
Gate
o Volts,
(1)
Tc = +125°C
(2)
IT = ISO
(3)
VR =
(4)
V
(5)
Rate-of-Rise
Voltage = 200 V/fJ.sec
(6)
Commutation
Repetition
(7)
(8)
Gate
o Volts,
(1)
Tc=+125°C
(2)
IT
(3)
VR = 1
(4)
VDRM
(5)
Rate-of-Rise Voltage =
(6)
(7)
Gate
(8)
o Volts,
Device
125°C,
Cycle';;; .01%.
DRM
DRM
Commutation Repetition
Under Test.
ITM = 500
IT
20
Volt
max. Rise
= 150 Amps.
50
Volts
(Reapplied)
Bias During
100
Amps.
50
Volts
(Reapplied)
Bias During
100
= ISO Amps.
Volt
(Reapplied)
200
Bias
During
100
CONDITION
VD =6Vdc,RL =30hms
VD =
6Vdc,
RL = 3
1000-Ohms
Amps. Peak.
= 50
Adc,
Open
of
di/dt
Rate
Ohms
of
di/dt
Rate
Ohms
of
V/fJ.sec
di/dt
Rate
Ohms
Time,
Min.
Reapplied
Min.
Reapplied
Reapplied
VDRM,
Circuit, 20
H,
tH
(Linear)
= 5 Amps/fJ.sec
= 1 pps.
Turn-Off
(Linear)
= 5 Amps/fJ.sec
= I pps.
Turn-Off
Off-State
(Linear)
= 5 Amps/fJ.sec
= 1 pps.
Turn-Off
Off-State
Interval
Off-State
Interval
Interval
I
Ohms
Gate
Ohm,
=
=
=
I
832
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