Powerex C158, C159 Data Sheet

HIGH SPEED

Silicon

1200

Volts

Controlled

Rectifier

110

ARMS

The General Electric C 158 and C159 Silicon Controlled Rectifiers are de­signed for power switching at high frequencies. These are all-diffused
Pac devices employing

FEATURES:

..

High

di!dt ratings.

..

High

dv/dt capability with selections available.

..

Excellent surge and

..

Guaranteed maximum turn-off time with selections available.

..

Rugged hermetic package with long creepage path.

250

the

field-proven amplifying gate.

et

ratings providing easy fusing.

HI

FR

ENCY

RRENT

Pic-

AMPLIFYING

GATE

ING

I---

fV\.

SINUSOIDAL

WAVEFORM

50%

DUTY

ISOo CONDUCTION

65°C

CASE

snVil!

TYPES

C158E, C159E
C158M,

C159M 600
C158S, C159S
CI58N, C159N
CI58T, C159T
C158P, C159P
C158PA, CI59PA
C158PB,

C159PB 1200

CYCLE

TEMPERATURE

mlTCHr

100 1000

FREQUENCY

I I

IN

HZ

REPETITIVE

VOLTAGE,VDRMI

T J = -40°C

"-

f',

\

r-­r-­r--

MAXIMUM

PEAK

OFF-STATE

to

+125°C

500 Volts

ALLOWABLE RATINGS

REPETITIVE

VOLTAGE,

TJ = -40°C

500 Volts 600 Volts

600 720
700
800
900

1000

700 840

800 960

900

1000

1100 1100

1200 1400

~I

RECTANGULAR

50%

dI/dt

L.-65C

,SOO

200

PEAK

V

to

+125°C

WAVEFORM

DUTY

-25jJ

CASE

TEMPERATURE

VOLT

SfiTCHING

REVERSE

1

RRM

CYCLE

SEC

500

--....

'"

J

1

1000

FREOUENCY

NON-REPETITIVE

REVERSE

~

Itl

Hz

T

1080
1200
1300

I"-

"-

2000

VOLTAGE,

=

+125°C

J

5000

PEAK

VRSMI

1 Half sinewave waveform, 10 ms max. pulse width.

830

RMS

On-State

Peak

One

Peak

One

et

(for

J2

(for

t

Critical

Current,
Cycle Surge
Cycle Surge

fusing) for times;;;' 1.5 milliseconds
fusing)

for

Rate-of-Rise

Critical Rate-of-Rise
Average
Storage

Operating

Stud

Gate

Temperature,

Temperature,

Torque

Power Dissipation,

................................................

IT(RMS)
(Non-Repetitive)
(Non-Repetitive)

times;;;'

of
of

8.3
On-State
On-State

T

....................................................

stg

T

..................•......................•............

J

.....................................................

On-State
On-State

Current,
Current,

ITsM
ITSM

(60
(50

...............................

milliseconds

Current,
Current,
PG(A

...............................

Non-Repetitive. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Repetitive

V)

...................................................

.......................................

Hz)

........................

Hz)

........................

5,200

(RMS

10,500

(RMS Ampere)2 Seconds

150 Lb.-In. (Max.),

17 N-m (Max.),

C158,C159

110
1600
1500

Ampere?

..

.-

._40°C

AO°C

125

Lb.-In. (Min.)

14

Amperes
Amperes
Amperes

Seconds

800

AIMS

500

AIMS

2 Watts

to

+IS0°C

to

+12SoC

N-m (Min.)

t

t

tdi/dt ratings established

20

ohms gate trigger source

TEST

Repetitive
and Off-State

C1S8E,
ClS8M,

Peak Reverse

Current

C1S9E

C1S9M
C1S8S, C1S9S
C1S8N,
C1S8T,
C1S8P,

CIS9N

C1S9T

C1S9P
ClS8PA,ClS9PA
C1S8PB, C1S9PB

Repetitive
and Off-State

ClS8E,

ClS8M,
C1S8S,

Peak Reverse

Current

ClS9E

ClS9M

ClS9S
C1S8N, C1S9N
C1S8T, C1S9T
ClS8P,

C1S9P
C1S8PA,ClS9PA
C1S8PB,

Thermal

ClS9PB

Resistance

Critical Rate-of-Rise
Off-State Voltage (Higher
values

may

cause device

switching)

Holding

DC

Current

Gate

Trigger Current

in

accordance with

with

0.5

fiS

SYMBOL

IRRM

and

IDRM

IRRM

and

IDRM

ReJc

of

dv/dt

IGT

EIA-NEMA

Standard RS-397, Section 5.2.2.6 for conditions of max. rated

short circuit trigger current

CHARACTERISTICS

MIN.

-

-

-

-

-

-

-

-

-

-

-

-

-

-

200

Higher

IH

TYP.

3 10
3 10
3 10
3
3 9
3 7
3 7
3 7

12
12
12 IS
12 IS
12 IS
12
12 17
12

.2 .3 °C/Watt

SOO

minimum dv/dt selections availabie consult factory.

100

-

-

-

80

150 300

30

rise

MAX.

10

lS
IS

IS

18

-

-

ISO

125

time.

UNITS

rnA

rnA

V //lsec

mAde

mAdc

VDRM;

TEST

CONDITION

= +2SoC

T

J

V

=

VRRM

ORM

=

SOO

Volts

Peak

600
700
800
900

1000
1100
1200

= 12SoC

T

J

V

DRM

= V

RRM

=

SOO

Volts

Peak
600
700
800
900

1000
1100

1200
Junction-to-Case
T

= +12SoC,

J

Linear
Exponential

Tc

= +2SoC,

Initial

On-State

Tc

=

Tc

=

Tc

= +12SoC, VD = 6 Vcle, RL = 3 Ohms

Gate

or

Exponential

dv/dt = DR

Anode

+2SoC, V

-40°C, V

Open.

V

DRM

Rising Waveform.

V M

(,632)

' ,

T

Supply = 2S

Current

D
D

= 2 Amps.
= 6 Vde, RL = 3 Ohms
= 6 Vclc, RL = 3 Ohms

20

= Rated

Vdc.

volts,

831

C158,C159

DC

Gate

Peak

On-State

Turn-On

Conventional
Commutated
Time

(wit h Reverse

Voltage)

Con

ventional
Commutated
Time

(with

Diode)

tCOl1Sult

ttDelay

tttCuucnt

factory for specified maximum Turn-Off Time.

Time

rise

TEST

Trigger Voltage

Voltage

Delay

Time

Circuit

Turn-Off

Circuit

Turn-Off

Feedback

may

increase significantly

time

as

measured with a current probe,

SYMBOL

VCT

VTM

td

tq

(diode)

tq

CHARACTERISTICS (Continued)

as

the gate

MIN.

-

-

0.15

-

-

-

TYP.

1.25 3.0

2.8 3.5

0.5

40

drive

or

MAX.

3 5

- -

-

20

25

approaches the
voltage rise time across a non-inductive resistor.

40

t

UNITS

Vdc

Volts

fJ.sec

IGT

fJ.sec

fJ.sec

fJ.sec

of the

t

TEST

Tc

=-40°CtoO°C,

Tc

=O°Cto

Tc

= 125°C, VDRM, RL =

Tc = +25°C,
Duty

Tc = +25°C,

Supply:

0.1

fJ.sec

(1)

Tc = +125°C

(2)

IT

(3)

VR =

(4)

V

(5)

Rate-of-Rise
Voltage = 20 V/fJ.sec

(6)

Commutation
Repetition

(7)

(8)

Gate

o Volts,

(1)

Tc = +125°C

(2)

IT = ISO

(3)

VR =

(4)

V

(5)

Rate-of-Rise

Voltage = 200 V/fJ.sec

(6)

Commutation

Repetition

(7)

(8)

Gate

o Volts,

(1)

Tc=+125°C

(2)

IT

(3)

VR = 1

(4)

VDRM

(5)

Rate-of-Rise
Voltage =

(6)

(7)

Gate

(8)

o Volts,

Device

125°C,

Cycle';;; .01%.

DRM

DRM

Commutation
Repetition

Under Test.

ITM = 500

IT

20

Volt

max. Rise

= 150 Amps.

50

Volts

(Reapplied)

Bias During

100

Amps.

50

Volts

(Reapplied)

Bias During

100

= ISO Amps.

Volt

(Reapplied)

200

Bias

During

100

CONDITION

VD =6Vdc,RL =30hms

VD =

6Vdc,

RL = 3

1000-Ohms

Amps. Peak.

= 50

Adc,

Open

of

di/dt

Rate

Ohms

of

di/dt

Rate

Ohms

of

V/fJ.sec

di/dt

Rate

Ohms

Time,

Min.

Reapplied

Min.

Reapplied

Reapplied

VDRM,

Circuit, 20

H,

tH

(Linear)

= 5 Amps/fJ.sec

= 1 pps.

Turn-Off

(Linear)

= 5 Amps/fJ.sec

= I pps.

Turn-Off

Off-State

(Linear)

= 5 Amps/fJ.sec

= 1 pps.

Turn-Off

Off-State

Interval

Off-State

Interval

Interval

I

Ohms

Gate

Ohm,

=

=

=

I

832

0
0

/

o

,/Y

0/

...,-lJs;"o

0----

~

:./'

Vla.ooo

0
0

0

o

0

10

W

000

1

2500

S;;

i:r5oo

30

v

..........

~o

i t----..

I

I

I

I

I

40:;0

fiO

PULSE

¥

r---..J:>

I-i'----

~

80

U

l.

S0

.............

PE"~

Se,

c

~

'"

~

t------

"'I'---

-I

100

BASE

WIDTH-MICROSECONDS

SINEWAVE

I

r----

"'~

I'---~

'"

I

-~

CURRENT

---

-I-

t--~

:10004000

GOOD

t-

I

1100010,000

RATING

1.

MAXIMUM

CURRENT

DATA

ALLOWABLE

VS. PULSE

PEAK

WIDTH

C158,C159

ON-STATE

(Tc

= 65°C)

w

'"

W

'"

0.

::E

<1

I

!2:1000

w

----

'"

::>

'"

u

w

l-

i:!

'?

z

o

"

W

'"

0.

10

0

10

0

0

O~

o

°v

:V/

°v

0

:~QQ!

0

0

0

10

~

-

I--

//

~

---

7500

I-

-

V

~o'

2500

5000

~

"'--....

<'50 p

~-

lJLSl:S~

00

------

~

I------t'

~

100

1--

--"-

ZOO

BASE

r-

f-

30

<10

50

60

80

PULSE

I'---

~

~

~

..,.....

--.....

'-...

~

r--

Iht

PULSE

~

100 1000

BASE

WIDTH

I

Ste

1':

"I""-

--~.

WIDTH-MICROSECONDS

" "

f---I---

300

400

500

1"--

~

i

600

eoo

~

j-----

1000

Iv.qPI,1

r~]l

t-..

~,

i"--

",

~c

~

I'-

,ct:;

""

~O

"'"

"I'-

'"

-MICROSECONDS

~

~"

JOOO'lOOO

~u

~8t:;.

....,

I~O

~.o

"'"

b-.

~

"'I'-

"

~

"'I'-

8.0

I

2.

6000

6000

MAXIMUM

CURRENT

-

10,000

3.

ENERGY

10K

ALLOWABLE

VS. PULSE

PER

PULSE FOR

PEAK

WIDTH

(TC

SINUSOIDAL

ON-STATE

= 90°C)

PULSES

NOTES:

(Pertaining

to

Sine

and

Rectangular Wave

1.

Switching Voltage =

2.

Maximum

3. Reverse Voltage Applied = VR <

4. Required
20
amps/J.lsec
20 volts, 20
100

ckt.

Gate

volts,

65

amps/J.lsec.

800

dv/dt = 200

Drive:

ohms,

1

ohms,

.5

Volts.

J.lsec

J.lsec

Volts/J.lsec

800

rise

time

rise

time

Current

V.

for less

for

Ratings)

than

greater

100

than

833

5. R C

Snubber

6. Max. energy dissipated
15%
wh ichever

7. Values

ckt. = 0.25

of

tota

I W-S/P shown in

is

least.

of

W-S/P

are

for

J.lf,

5.\1

during

Tj =

125°C.

reverse recovery

chart 5 or

0.03

to

be

W-S/P

C158,C159

(/)

w

300

0::

W

a..

::!:

~

200

I-

Z

W

0::

0::

::l

U

100

w

i;t

80

I-"

(/)

I

Z

60

0

:.::

«

w

a..

4.

MAXIMUM

6 8

10

RATE

OF

AMPERES

ALLOWABLE

CURRENT

RECTANGULAR

PULSES

RISE

PER

SECOND

20

30

ON-STATE CURRENT

PER MICROSECOND

PEAK

VS.

di/dt

(Tc

1000

2500

40

60

ON·STATE

= 65°C)

WAVE

DUTY

60

I

:-

80

CURRENT

CYCLE 50%

100

l:3

300

0::

w

a..

~

200

I-

Z
W

0::
0::

a 100

W

80

i;t

~

60

I

Z

o

:.::

«

W

a..

RATING

-

6 8

5.

MAXIMUM

DATA

PULSES

10

RATE

OF

AMPERES PER MICROSECOND

CURRENT

PER

SECOND-

20

RISE

ON-STATE CURRENT

ALLOWABLE

VS.

di/dt

30

60

400

I

1000

40

PEAK

(Tc

= 90°C)

I

60

80

100

ON·STATE

I

-

(/)

W
0::

W

~

«

I-

z

W

0::

!S

u

w

I-

~

I

Z

o

:.::

«

w

a..

800

600

r-.

400

300

200

---

-.

.......

100

00

60

40

10

300

200

100

80

60

6.

MAXIMUM

-....

l-

r--..

20

-

-

6

8

RATE

CURRENT

~

40

60

IpUL~ES

10

OF

RISE

AMPERES

80

PER

ALLOWABLE

VS.

"-

--

i'----

---......

---

"-

--

C'---

0.05

'-l.

'i-....

100

200

PULSE

BASE

pbR

20

30

ON

-STATE CURRENT

MICRbSECOND

PEAK

di/dt

(Tc

~

"-

025

01

'100

600

WIDTfi-MICROSECONDS

800

DUTY

,

SLO'ND

40

= 65°C)

"-

~

05

I'.....

60

400

~~O~

I I

2500

60

ON·STATE

WATT·SECOND

"-

"-

'""

"l

5

""

2:'"

~

"'"

~

i"-

:'>.-

"'-

1000

2.000

"

CYCLE - 25%

80

100

7.DWATT-S

~EAPUL

""

""

"

4000

6000

aooo

EC

SE-

10,000

-

300

(/)

W

0::

W

~

200

5

I-

Z

W

0::

!S

100

u

w

80

l-

f:!

(/)

60

I

Z

o

:.::

«

w

a..

7.

PER PULSE

000

60

0

I------------

~

400

....

~

300

~

200

~

w

I---

~

100

~

~

60

60

'--~

40

10

6

8

RATE

AMPERES

MAXIMUM

CURRENT

1"'-1-

r----

I--t--

r-

~

!---

20

40

PULSES

10

OF

RISE

PER

20

ON -STATE

PER

ALLOWABLE

VS.

di/dt

l-

r-...

"

r----

I-i------

,

60

SO

~Ol

'-

0.05

-,.....

K

100

200

PULSE BASE WIDTH - MICROSECONDS

SECOND

40

CURRENT

MICROSECOND

PEAK

(Tc

f':

'-..

"'-

0_5

'-..

025

'-..,

400

600

60

400

1000

60

ON·STATE

= 90°C)

."-,35

1---("

10

"-,

~

~

'"

"-..

800

1000

""

80

f'..,

1"'-

---

f'..,

2000

"'"

"-

100

7,0

WATT~SEC

PER PULSE

f'..,

i'i'-

f'..,

l"-

f'.-J'...

4000

'"

i'

6000

6000

10,000

8.

ENERGY

AND

PER

PULSE

PULSE VS.

WIDTH

(di/dt

PEAK

= 100

CURRENT

A/J1sec)

834

9. ENERGY
AND

PULSE

PER

PULSE VS.

WIDTH

(di/dt

PEAK

= 25

CURRENT

A/J1sec)

800
600

iii

w

ffi400

"-

:;;
:!300

?

;2

~200

a:

:::>

u
w

l-

f!

100

(f)

:Z

80

o

;£

60

w

"-

40

10

10.

....

""

20

40

ENERGY

AND

'"

.11

"-

'"

~

f',.

~.25

,K.~

III,~O

1.0

I'

0.5

"

~.I

.05

"'

"-

60

SO

100

PULSE BASE WIDTH - MICROSECONDS

PER

PULSE VS.

PULSE

WIDTH

f\

r".

1',

I'.

r'\

200

4006gg~000

PEAK

(di/dt

,""-

'\.

= 5 A//lsec)

1\.

7.0

3.5

~

."-

~

"

"-

~k-

~

"f\

"r-,

'"

WATT"

SECOND

PULSE

I'

1\

.......

"\

'"

'\.

l\.

'l\.

2000

CURRENT

r-,

400060~80?O,OOO

C158,C159

(f)

w

a:

ll:1000
:;;

<{

?

z

w

a:
a:

:::>

u

w

~

~

100

o

(f)

:::>

o

w

z

;::

;2

f!

'"

~

11.

2000

1700

ill

1500

a:

WW

~~

":;!

!g?

1200

U)~

LLa:
...Ja:

<{:::>

1000

u

:r:

",W

~~

"-in

800

2:

o

13. SURGE

/I

VI

125°C

25°C

2 3

INSTANTANEOUS ON·STATE

MAXIMUM

I-

t--....

--

r--....

INI~IAL

1.5

2 3 4 6 8

(NON-REPETITIVE)

,.

4

ON-STATE

I'--

r--.

T

" -140°C

J

I I I I I I

NUMBER

~

~

~

0

7

6

5

VOLTAGE

CHARACTERISTICS

I'j-.j-.

~

8 9

-VOLTS

r-...

--......

TO

+125°f

I

II

OF

CYCLES AT

10

ON-STATE

60

20

Hz

10

r--....

40

CURRENT

r-..

60

40
30

(J)

I-

5

20

i--.

>

,

W

'"

~

~

w

!;t

'"

(f)

:::>

fr1

;2

;::

;2

;::

(f)

~

1

C\J

H

10

8

6

5

4

/

3

2

12lC

I

15

u 12,500
w

(f)

10,000

C\J

~

8000

<{

~

6000

a:

5000

/

.10

,000

--

/'

12.

=--

-.......

/'

/'

-40°C

OO·C

V

.2

INSTANTANEOUS

GATE

--

14. SUB-CYCLE SURGE
ON-STATE

IA

/

'1\

k

/

V

.3.4

TRIGGER

AND

~

LOCUS

OF
POSSIBLE
DC
TRIGGER

POINTS

V

.6.8

POWER

~',

GATE

~

J--

INITIAL

T

h-

F--.:

1.5

2 3

PULSE BASE WIDTH mSEC

CURRENT

~

'"

i'..

~. ) ·/6'0~~1

~~

""0 0

~

""

I 0

• 6'

•
/0

6',,>

/0

If.,

--~C'

">U'

'<1-""-:==f-1.i-<7

~C'

U'

4;-)...

'<1*......

./

V

>-20V,

1.0
CURRENT -(AMPERES)

CHARACTERISTICS

RATINGS

.-

"

-40°C

J

~ I ~~

~U'

-""

~-"

~C'

U'"

2T

2.0 3.0 4.0 6.0

f'...

V

U'

f

......

V

LOrTEI

4; .

..-

TO

+125°C

r-..

l-

I"-

-

4

(NON-REPETITIVE)

AND h RATING

6

17

h

0

~U'

-""

~

U'

'<1+

:<7+

.

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....

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l-

8

t-

0",

8.0

...

+

.

10.0

10

835

C158,C159

LOW

100

90

0

~

6

2

o

..J

0

:::J

o

o

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0

o

W

0::
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o

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o

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4

2

I

15.

TYPICAL

SINEWAVE

--=

-

A/}J-

SEC

~-

::=.----

~I

v----

20

WAVEFORM

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r::

V

----

,

6 8 10

REVERSE

CURRENT

----

:::8==

Vv

!---'~

f/

dUdl

..-------::::

~

/"

/

/"V

/

RECOVERED CHARGE (125°C)

:::::

---

40

60

100

0

(f)

II!

0

00

I-

5

-

00

I-

4

r-

3

00

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00

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80

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16.

TYPICAL

SINEWAVE

/'

/:

V

/

V/

-:/

V

v:::

V

REVERSE

dl/tlt

RECOVERED

CURRENT

~

~

V

V/

/L

//

!

10

-

20

A/fL

SEC

CHARGE (25°C)

~

~

V

V

V

~

~

V

/

40

60

WAVEFORM

/"

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5

00
00

00

00

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00

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I

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17.

TRANSIENT

~i"""

..-

'/

/"

;"

V

;"

.I

TIME

THERMAL

(SECONDS)

I

10

IMPEDANCE -

100

JUNCTION-TO-CASE

836

C158,C159

NOTES:

I.

ONE
OF

2.

"T"
WITHIN

3.

ANGULAR

MODEL

CI59

NUT

AND

HARDWARE

DIM.

IS

AREA

2.5
ORIENTATION

TERMINAL

GATE

ONE

LOCK

IS

STEEL,

OF

THREADS

TERMINAL TERMINAL

ill

CATHODE

WASHER

SUPPLIED

CAD

PLATED.

UNTHREADED

OF

SEATING

OF

TERMINALS

@ @

+

PORTION.
PLANE.

IS

E

G L

I'

RED

J~~

f1=--~~

L-

~EE~-N"'-O-T-E-2----L'-=-L-.....j

~~

i

N

I·

MODEL

CI58

NOTES:

I.

GATE 8 AUX.

2.

FLEXIBLE

3.

ONE

HARDWARE

4.

"R"

5.

"T"
WITHIN

6.

ANGULAR ORIENTATION

CATHODE

COPPER

NUT

AND

IS

DIM.

IS

DIA.

DIM. IS AREA

2.5

THREADS

TERMINAL

CD

GATE

LEADS

LEAD.

ONE

LOCI(WASHER SUPPLIED WITH

STEEL,

OF

EFFECTIVE SEATING AREA.

OF

UNTHREADED PORTION. COMPLETE

o

TERMINAL TERMINAL

®

AUX

CATHODE

SUPPLIED

LIGHTLY TWISTED

CAD

PLATED.

OF

SEATING PLANE.

OF

TERMINALS

CATHODE

IS

ANODE

-

WITH

EACH

COMPLETE

UNDEFINED.

TERMINAL

®

+

EACH

UNIT.

UNDEFINED.

THREAD

1/2-20

UNIT.

THDS.

---

SEATING

®

ANODE

-

TOGETHER.

MATERIAL

THDS.

OUTLINE

S

SIZE

UNF-2A

MATERIAL

ARE

PLANE

S

THREAD

1/220UNF-2A

OF

ARE

DRAWINGS

SIZE

f

SYM

MIN.\

A

1.020
8
C

D
E
F
G
H

J

K

SYM

A 1.020
8

1.570

C

6.000

D

6.850

E

F

G

H

J

K

INCHES

MAX.

1.140

.390

.500

1.460

REF.

1.6601.800
.312 REF
_797

.827

.060

.075

.3B5

.4

.445

.485

.198 .212

INCHES

MIN.

MAX.

1.140

.390

.500

1.750

6.390
7,500

]97

.827

.140

.150
.300

-

.500

.610

.260

.281

METRIC

MM

MIN.

MAX.

25.90

28.96

9.90

12.70

7.92

REF.

42.16

45.72

7.92

REF.

20.24

21.01

1.52

9.77

15

10.54

11.30

12.32

5.02

METRIC

MM

MIN.

25.90

28.96

9.90

39.87

44.45

152.40 162.31 P

173.99

190.50

20.24

3.55

12.70

15.49

6.60

SYM.

1.91

5.38

SYM

MAX.

12.70 M

21.01 R

3.81 T

7.62

7.14

L

N

P

Q

T
V

L

N

Q

V

INCHES

MIN. MAX.

.590

.640

.070

.058

.840

.910

,499

.425

.060

-

1.052 1.063

INCHES

MIN.

MAX.

.330

-

275

.325

.065

.095

.840

.910 21.33 23.11

.425

.499

.920

-

.060

-

1.052

1.063

METRIC

MM

MIN.

MAX.

14.98 16.26

1.47

1.78

23.11

21.33

10.79

12.67

1.52

-

26.72

27.0C

METRIC

MM

MIN. MAX.

8.38

-

6.98

8.26

2.41

1.65

10.79

12.67

23.36

-

1.57

-

26.72

27.00

NOTES

2

NOTES

4
5

837