Powerex C154, C155, C156, C157 Data Sheet
HIGH SPEED
Silicon
600
Controlled
VOLTS
110A
Rectifi
RMS
The General ElectIic C154, C155, C156 and C157 Silicon Controlled Rectifiers are designed for
diffused
FEATURES:
" High di!dt ratings.
"
" Excellent surge and 12t ratings providing easy fusing.
Pic-Pac devices employing
High
dv!dt capability with selections available.
" Guaranteed maximum
" Rugged hermetic package with long creepage path.
TYPES
C154A,
C156A, C157A
C154B, C155B,
C156B, C157B
C154C,
C156C,
C154D, C155D,
C156D,
C154E,
C156E, C157E
C154M,
C156M,
C155A,
C155C,
C157C
C157D
C155E,
C155M,
C157M
power
turn·off
REPETITIVE
switching
time with selections available.
VOLTAGE,
T
= ·40
J
at
high frequencies. These are all
the
field proven amplifying gate.
MAXIMUM
PEAK
OFF·STATE
VORMI
o
C
to
+125°C
100 Volts
ALLOWABLE
REPETITIVE
VOLTAGE,
T
=
J
RATINGS
.40oC
100 Volts
200 200
300
300
400 400
500 500
600 600
PEAK
VRRMI
to
REVERSE
+125°C
AMPLIFYING
NON·REPETITIVE
REVERSE
VOLTAGE,
T
=
J
160 Volts
260
380
480
600
720
GATE
C154/155
PEAK
VRSMI
+125°C
1 Half sinewave waveform, 10
RMS On-State
Current,
Peak One Cycle Surge (Non-Repetitive) On-State Current, I
Peak One Cycle Surge (Non-Repetitive) On-State Current, I
Critical Rate-of-Rise
Critical Rate-of-Rise
I2
t (for fusing) for
12t (for fusing) for
ms
max. pulse width.
IT(RMS)'
of
On-State Current, Non-Repetitive
of
On-State Current, Repetitive. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
times?
times?
....................................................
(60 Hz)
TSM
(50 Hz)
TSM
...
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
........................
........................
1.5 milliseconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8.3 milliseconds
...............................
..
9,500 (RMS
13,500 (RMS Ampere)2 Seconds
..
..
Ampere?
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature, T
Operating Temperature, T
Torque
Stud
t
ratings established in accordance with EIA-NEMA Standard RS-397, Section 5.2.2.6 for conditions
di/dt
20
ohms gate trigger source with
................................................
.......................................................
stg
.....................................................
J
0.511s
short circuit trigger current rise lime.
AO°C to +150°C
. AO°C
150 Lb.-In. (Max.), 125 Lb.-ln. (Min.)
17
N-m
(Max.), 14 N-m (Min.)
of
max. rated VORM;
823
110 Amperes
1800 Amperes
1700 Amperes
800
A!/ls
500
A!/ls
Seconds
..
2 Watts
to
+125°C
20
volts,
'I
'I
C154,C156
C155,C157
CHARACTERISTICS
TEST
Repetitive
Peak Reverse
and Off-State
Current
SYMBOL
IRRM
IORM
Repetitive
and Off-State
Peak Reverse
Current
IRRM
IORM
Thermal
Critical Rate-of-Rise
Resistance
of
Off-State Voltage (Higher
values
may
cause device
switching)
C154/C156
C155/C157
Holding
DC Gate Trigger
Current
Current
DC Trigger Voltage V
Peak
On-State Voltage V
Turn-On
Conventional
Commutated
Time
Delay
(with
Time
Circuit
Turn-Off
Reverse
Voltage)
C154/C156
C155/C157
Conventional
Commutateel
Time
(with
Circuit
Tum-Off
Feedback)
tq(diode)
Diode)
C154/C156
C155/C157
MIN.
-
TYP.
5
MAX.
12
UNITS
rnA
and
-
12
17 rnA
and
ReJc
dv/dt
-
200
100
.2 .3
500
300
°C/Watt
V//lsec
-
-
For higher minimum dv/dt selections - consult factory.
IH
IGT
GY
-
- 50 150
-
-
-
100
100
200
30 120
3.0
5.0
1.25 3.0
mAdc
mAdc
Vdc
0.15
TM
td
tq
-
-
-
- 12
2.2 3.0
Volts
1 /lsec
/lsec
8
10
20
/lsec
-
- 15
12
t
i"
TEST
= +25°C
T
J
V =
VORM
= V
TJ=125°C
V =
VORM
= V
J unction-to-Case
TJ = + 125°C,
Linear
Exponential
Tc
= +25°C,
Initial
On-State
Tc
=
Tc
=
Gate
or
Exponential
.
dv/dt = --
Anode
+25°C,
-40°C,
Tc = +125°C,
TC
==
-40°C
to
RL = 3
Tc
RL = 3
Tc
T c = +25°C,
Duty
Tc
Supply:
0.1
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Ohms
==
O°C
to
+125°C,
Ohms
==
+125°C, V
ITM
Cycle < .01 %
= +25°C,
20
IT
Volt
/lsec max. rise time.
Tc
= +125°C
ITM
=·150
V
==
50
R
VORM
Volts
(Reapplied)
Rate-of-Rise
Voltage
==
Commutation
Duty
Cycle < .01%
Gate Bias During
o Volts, 100
(1)
Tc
==
(2)
(3)
(4)
+125°C
ITM = 150
VR = 1 Volt
VORM
(Reapplied)
(5) Rate-of-Rise
Voltage
(6)
Commutation
(7)
Duty
Gate
(8)
==
Cycle < .01%
Bias During
o Volts, 100
CONDITIONS
RRM
RRM
Open. V
ORM
Rising Waveform
V
ORM
(.632)
T
Supply = 24
Current
Vo
Vo
Vo = 6Vdc,
O°C,
= 2 Amps.
= 6 Vdc, RL = 3 Ohms
= 6 Vdc, RL = 3 Ohms
RL = 3
Vo
= 6Velc,
Vo = 6Vdc,
,
RL
==
ORM
1000
= 500 Amps. Peak
= 50 Adc, VORM,
Open
Circuit,
20
Amps.
Min.
of
Reapplied Off-State
20 V //lsec (linear)
eli/dt = 5 Amps//lsec.
Turn-Off
Interval
Ohms
Amps.
of
Reapplied Off-State
20 V//lsec
eli/elt = 5 Amps//lsec
Turn-Off
Interval =
Ohms
= Rated,
Vdc.
Ohms
Ohms
Gate
Ohms,
==
tConsult factory for specified maximum turn-off time.
824
SINE
WAVE
DATA
C154, C156
C155,C157
2000
Ul
1500
w
a::
w
a..
:l;
<t
f-
Z
w
a::
a::
:::>
u
w
!;t
f-
Ul
0
<t
w
a..
1000
800
I
600
400
300
I
z
200
150
'"
100
10~
10
A/JS./
~
V
V
--
-
/
--
..-
PULSE
2500
ILl
......
100
BASE
1. Maximum allowable peak on-state
2000
1500
Ul
w
a::
1000
w
a..
:l;
<t
I
f-
Z
W
a::
a::
i3
w
~
U)
I
Z
0
<t
'"
~
800
600
400
300
200
100
80
10
100 A
I,.,.
/
/"
-
r
....--
5
....
PULSE
100
BASE
I I
~uzJ~lll
"'~I?
s~C
'
......
i'
1000
I
I
~s
f:J~1?
'-.......
"'400
1000
"OtvD
s~c
........ ........
"::"00
..,fOoo
..........
......
WIDTH-MICROSECONDS
current
-
2500
WIDTH-MICROSECONDS
vs. pulse width
I)
r-.....
u
i'
i'
1000
1111
Zs
-
6'0
.......
r--..,
i'
(T
c = 65°C)
~tvD
"",
'"
10K
60
10K
2. Maximum allowable peak on-state
NOTES:
(Pertaining
to
Sine
and
Rectangular
1. Switching voltage <
Maximum
2.
Required
3.
20
4. Reverse voltage applied = VR <
5.
R-C
6. Max. energy dissipated
15% of
is
Va
7.
ckt.
gate drive:
volts,
20
Snubber
total
least.
lues of W-S/P are
dv/dt = 100
ohms,
.5
ckt. = .25
W-S/P
400
)isec rise
during
shown
for
825
current
Wave
volts.
volts/)isec.
time.
)if,
5
ohms.
reverse recovery
or
0.03
Tj =
125°C.
vs. pulse
Current
Ratings)
400
volts.
W-S/P, whichever
width
to
(T
c = 90°C)
be
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