POWEREX BCR3AS-12L Datasheet
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
•IT (RMS) ........................................................................3A
•V
DRM ..............................................................400V/600V
•I
FGT !, IRGT !, IRGT # .........................15mA (10mA)
✽2
BCR3AS
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
Symbol
V
DRM
VDSM
Parameter
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
✽1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
Symbol
I
T (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, T
c=108°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Ratings
3
30
3.7
3
0.3
6
0.3
–40 ~ +125
–40 ~ +125
0.26
✽1. Gate open.
6.5
5.0±0.2
2.3 2.3
0.9 MAX
1.0
5.5±0.2
2.3
10 MAX
0.5±0.1
0.5±0.2
0.8
1.5±0.2
1
.0 MAX
2
23
4
1
3
4
1
1
2
3
4
T
1
TERMINAL
T2 TERMINAL
GATE
TERMINAL
T2 TERMINAL
TYPE
NAME
VOLTAGE
CLASS
∗
2.3 MIN
∗
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
MP-3
Feb.1999
50 1234
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
TC = 25°C
10023 5710123 5710
2
44
30
35
20
25
10
15
5
40
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
Symbol
I
DRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
✽2
Gate trigger current
✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
T
j=125°C, VDRM applied
T
c=25°C, ITM=4.5A, Instantaneous measurement
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=125°C, VD=1/2VDRM
Junction to case
✽4
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
✽2.High sensitivity (IGT≤10mA) is also available.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.Case temperature is measured on the T
2 terminal.
ELECTRICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Max.
2.0
1.7
1.5
1.5
1.5
15
✽2
15
✽2
15
✽2
—
3.8
—
PERFORMANCE CURVES
Test conditions
Voltage
class
8
12
V
DRM
(V)
400
600
Commutating voltage and current waveforms
(inductive load)
(dv/dt) c
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
Min.
5
Unit
V/µs
1. Junction temperature
T
j=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c=–1.5A/ms
3. Peak off-state voltage
V
D=400V
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