Philips (Now NXP) PUMX1 Schematic [ru]
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
MBD128
PUMX1
NPN general purpose
double transistor
Preliminary specification
Supersedes data of 1997 Jul 09
1999 Apr 14
Philips Semiconductors Preliminary specification
NPN general purpose double transistor PUMX1
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V)
• Reduces number of components and boardspace.
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
3, 6 collector TR2; TR1
APPLICATIONS
• General purpose switching and amplification.
handbook, halfpage
56
4
645
DESCRIPTION
Two independently operating NPN transistors in an SC-88
plastic package. PNP complement: PUMT1.
MARKING
TYPE NUMBER MARKING CODE
TR1
132
Top view
MAM340
132
Fig.1 Simplified outline (SC-88) and symbol.
TR2
PUMX1 ZtZ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
Note
1. Device mounted on an FR4 printed-circuit board.
≤ 25 °C − 200 mW
amb
≤ 25 °C; note 1 − 300 mW
amb
1999 Apr 14 2
Philips Semiconductors Preliminary specification
NPN general purpose double transistor PUMX1
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per device
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
thermal resistance from junction to ambient note1 416 K/W
collector cut-off current IE= 0; VCB=30V − 100 nA
I
= 0; VCB= 30 V; Tj= 150 °C − 10 µA
E
emitter cut-off current IC= 0; VEB=4V − 100 nA
DC current gain IC= 1 mA; VCE= 6 V 120 −
collector-emitter saturation
IC= 50 mA; IB= 5 mA; note 1 − 200 mV
voltage
collector capacitance IE=ie= 0; VCB= 12 V; f = 1 MHz − 1.5 pF
transition frequency IC= 2 mA; VCE= 12 V; f = 100 MHz 100 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
1999 Apr 14 3
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