Philips (Now NXP) PMBT4401 Schematic [ru]
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PMBT4401
NPN switching transistor
Product specification
Supersedes data of 1999 Apr 15
2004 Jan 21
Philips Semiconductors Product specification
NPN switching transistor PMBT4401
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Industrial and consumer switching applications.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: PMBT4403.
MARKING
TYPE NUMBER MARKING CODE
(1)
PMBT4401 *2X
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
PMBT4401 − plastic surface mounted package; 3 leads SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 600 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 21 2
Philips Semiconductors Product specification
NPN switching transistor PMBT4401
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th (j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 500 K/W
collector-base cut-off current IE= 0; VCB=60V − 50 nA
emitter-base cut-off current IC= 0; VEB=6V − 50 nA
DC current gain VCE= 1 V; (see Fig.2)
IC= 0.1 mA 20 −
IC= 1 mA 40 −
IC=10mA 80 −
IC= 150 mA; note 1 100 300
IC= 500 mA; VCE= 2 V; note 1 40 −
collector-emitter saturation
voltage
IC= 150 mA; IB= 15 mA; note 1 − 400 mV
IC= 500 mA; IB= 50 mA; note 1 − 750 mV
base-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 − 950 mV
IC= 500 mA; IB= 50 mA; note 1 − 1.2 V
collector capacitance IE=Ie= 0; VCB= 5 V; f = 1 MHz − 8pF
emitter capacitance IC=Ic= 0; VEB= 500 mV; f = 1 MHz − 30 pF
transition frequency IC= 20 mA; VCE= 10 V; f = 100 MHz 250 − MHz
turn-on time I
delay time − 15 ns
= 150 mA; I
Con
I
= −15 mA
Boff
Bon
= 15 mA;
− 35 ns
rise time − 20 ns
turn-off time − 250 ns
storage time − 200 ns
fall time − 60 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2004 Jan 21 3
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