Philips (Now NXP) PIMZ2 Schematic [ru]
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
Rev. 05 — 24 November 2004 Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose double transistors.
Table 1: Product overview
Type number Package Configuration
PIMZ2 SOT457 SC-74 NPN/PNP double transistors
PUMZ2 SOT363 SC-88 NPN/PNP double transistors
1.2 Features
■ Simplified circuit design
■ Reduced component count
■ Reduced pick and place costs.
Philips JEITA
1.3 Applications
■ General-purpose switching and amplification.
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
CEO
C
collector-emitter voltage open base - - 50 V
collector current (DC) - - 150 mA
Philips Semiconductors
2. Pinning information
Table 3: Pinning
Pin Description Simplified outline Symbol
PIMZ2 (SOT457)
1 collector TR2
2 emitter TR2
3 collector TR1
4 emitter TR1
5 base TR1
6 base TR2
PUMZ2 (SOT363)
1 emitter TR1
2 base TR1
3 base TR2
4 collector TR2
5 emitter TR2
6 collector TR1
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
456
TR1
sym082
456
TR2
sym083
132
132
56
SOT457
56
SOT363
4
TR2
132
4
TR1
132
3. Ordering information
Table 4: Ordering information
Type number Package
PIMZ2 SC-74 plastic surface mounted package; 6 leads SOT457
PUMZ2 SC-88 plastic surface mounted package; 6 leads SOT363
4. Marking
Table 5: Marking codes
Type number Marking code
PIMZ2 M6
PUMZ2 GZ*
[1] * = -: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Name Description Version
[1]
9397 750 13966 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 05 — 24 November 2004 2 of 9
Philips Semiconductors
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
PIMZ2; PUMZ2
NPN/PNP general-purpose double transistors
collector-base voltage open emitter - 60 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 7 V
collector current (DC) - 150 mA
peak collector current - 200 mA
peak base current - 100 mA
total power dissipation T
SOT457
SOT363
storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
total power dissipation T
SOT457
SOT363
amb
amb
≤ 25 °C
≤ 25 °C
[1]
- 200 mW
[1]
- 180 mW
[1]
- 300 mW
[1]
- 300 mW
[1] Device mounted on an FR4 printed-circuit board.
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
Per device
R
th(j-a)
[1] Device mounted on an FR4 printed-circuit board.
thermal resistance from
junction to ambient
SOT457
SOT363
thermal resistance from
junction to ambient
SOT457
SOT363
T
T
amb
amb
≤ 25 °C
≤ 25 °C
[1]
- - 625 K/W
[1]
- - 694 K/W
[1]
- - 417 K/W
[1]
- - 417 K/W
9397 750 13966 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 05 — 24 November 2004 3 of 9
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